PEMB2,115 Pre-Biased Dual PNP Transistor Equivalent & Substitute Parts

Part Overview

The PEMB2,115 is a pre-biased dual PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. in SOT-666 surface mount packaging. This component integrates two PNP transistors with internal biasing resistors, designed for switching and amplification applications requiring 50V collector-emitter breakdown voltage and 100mA maximum collector current.

The PEMB2,115 carries a "Not For New Designs" product status, indicating that Nexperia has discontinued active development for this part number. This status necessitates identification of functionally equivalent alternatives from active product lines to ensure design continuity and long-term supply chain reliability.

Substiute Parts

PEMB2,115

Nexperia USA Inc.In Stock: 1136PEMB2,115 Datasheet

Current PartRFQ

NSBA144EDXV6T1G

Fairchild SemiconductorIn Stock: 36772NSBA144EDXV6T1G Datasheet

DirectRFQ

EMB2T2R

Rohm SemiconductorIn Stock: 7580EMB2T2R Datasheet

SimilarRFQ

RN2904FE,LF

Toshiba Semiconductor and StorageIn Stock: 4851RN2904FE,LF Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the PEMB2,115 is determined by strict equivalence across the following critical parameters:

Mandatory Matching Criteria:

• Transistor configuration: 2 PNP - Pre-Biased (Dual)
• Maximum collector current: 100mA
• Collector-emitter breakdown voltage: 50V
• Internal base resistor (R1): 47kOhms
• Internal emitter-base resistor (R2): 47kOhms
• Mounting type: Surface Mount
• Moisture sensitivity level: 1 (Unlimited)

Acceptable Variation Parameters:

• DC current gain (hFE): Minimum 68 or higher at specified test conditions
• Vce saturation: Up to 300mV (PEMB2,115 specifies 150mV maximum)
• Maximum power dissipation: 100mW or higher
• Frequency - Transition: Any value or unspecified
• Package designation: SOT-563 or SOT-666 compatible
• Product status: Active or Not For New Designs

All substitute parts listed below satisfy these criteria and are electrically and mechanically compatible with the PEMB2,115 in equivalent circuit applications.

Parameter Comparison

Engineering Selection Recommendations

NSBA144EDXV6T1G (Fairchild Semiconductor)

The NSBA144EDXV6T1G is the primary direct substitute for the PEMB2,115. This part maintains identical electrical specifications for all critical parameters: 100mA maximum collector current, 50V breakdown voltage, 47kOhms internal resistors, and 80 minimum DC current gain. The NSBA144EDXV6T1G carries Active product status, ensuring long-term availability and continued manufacturer support. Higher maximum power dissipation (500mW versus 300mW) and lower collector cutoff current (500nA versus 1µA) provide enhanced performance margins. Moisture sensitivity level remains at MSL 1 (Unlimited), matching the original part. This substitute is suitable for direct replacement in existing designs without circuit modification.

EMB2T2R (Rohm Semiconductor)

The EMB2T2R from Rohm Semiconductor is an active alternative with equivalent core electrical specifications. This part maintains 100mA collector current, 50V breakdown voltage, and 47kOhms internal resistors. The DC current gain minimum of 68 at 5mA, 5V is slightly lower than the PEMB2,115 specification of 80, but remains within acceptable operating margins for pre-biased transistor applications. The EMB2T2R includes transition frequency specification (250MHz), providing additional performance data not available for the PEMB2,115. Maximum power dissipation is 150mW, which is lower than the original part; applications requiring sustained power dissipation above 150mW should use the NSBA144EDXV6T1G instead. RoHS3 compliance and MSL 1 rating match the original specification.

RN2904FE,LF (Toshiba Semiconductor and Storage)

The RN2904FE,LF is an active substitute from Toshiba with equivalent electrical configuration. This part meets all mandatory matching criteria: 100mA collector current, 50V breakdown voltage, and 47kOhms internal resistors. DC current gain specification of 80 at 10mA, 5V aligns with the PEMB2,115 performance. The RN2904FE,LF includes transition frequency specification (200MHz). Maximum power dissipation is 100mW, the lowest among available substitutes; this part is suitable only for applications with power dissipation requirements below 100mW. RoHS3 compliance and MSL 1 rating are maintained. Toshiba's active product status ensures continued supply availability.

Selection Criteria Summary:

• For maximum design flexibility and power headroom: NSBA144EDXV6T1G (500mW maximum power)
• For active product status with moderate power requirements: EMB2T2R (150mW maximum power, 250MHz transition frequency)
• For low-power applications: RN2904FE,LF (100mW maximum power, 200MHz transition frequency)

All three substitutes are RoHS3 compliant and carry MSL 1 moisture sensitivity ratings, matching the original PEMB2,115 environmental specifications.

Frequently Asked Questions (FAQ)

Q: Can the NSBA144EDXV6T1G replace the PEMB2,115 in existing circuit designs?

A: Yes. The NSBA144EDXV6T1G maintains identical electrical specifications for collector current (100mA), breakdown voltage (50V), internal resistor values (47kOhms each), and DC current gain (80 minimum). The higher maximum power dissipation (500mW) and lower collector cutoff current (500nA) represent performance improvements. No circuit modifications are required.

Q: What is the difference between SOT-666 and SOT-563 packaging?

A: SOT-666 and SOT-563 are both surface mount packages for dual transistor configurations with internal resistors. The PEMB2,115 is supplied in SOT-666 packaging. The NSBA144EDXV6T1G is supplied in SOT-563 packaging. Both packages are mechanically and electrically compatible for the same circuit function, though PCB footprints differ. Verify PCB layout compatibility before substitution.

Q: Why does the EMB2T2R have a lower DC current gain minimum (68 versus 80)?

A: The EMB2T2R specifies a minimum DC current gain of 68 at 5mA, 5V, compared to the PEMB2,115 specification of 80 at the same test conditions. This 12-unit difference is within acceptable tolerance for pre-biased transistor applications where the internal resistor network establishes bias conditions. Both parts function identically in switching applications. For applications requiring precise current gain matching, the NSBA144EDXV6T1G or RN2904FE,LF (both 80 minimum) are preferred.

Q: What does "Not For New Designs" status mean for the PEMB2,115?

A: "Not For New Designs" indicates that Nexperia has discontinued active development and marketing of the PEMB2,115. The part may remain available from existing inventory, but no new product improvements or long-term supply guarantees are provided. New circuit designs should specify one of the active substitute parts: NSBA144EDXV6T1G, EMB2T2R, or RN2904FE,LF.

Q: Are all substitute parts RoHS3 compliant?

A: The NSBA144EDXV6T1G compliance status is not specified in available documentation. The EMB2T2R and RN2904FE,LF are both RoHS3 compliant, matching the PEMB2,115 specification. Verify RoHS compliance documentation with the supplier for the NSBA144EDXV6T1G if RoHS3 certification is required for your application.

Q: What is the significance of the 47kOhms internal resistor values?

A: The PEMB2,115 integrates two 47kOhms resistors: one between base and collector (R1) and one between emitter and base (R2). These resistors establish the pre-bias network, determining the transistor's switching threshold and quiescent current. All substitute parts maintain identical 47kOhms values, ensuring equivalent bias behavior and circuit performance. This parameter is non-negotiable for substitution.

Q: Can the RN2904FE,LF be used in high-power applications?

A: No. The RN2904FE,LF specifies a maximum power dissipation of 100mW, the lowest among available substitutes. Applications requiring sustained power dissipation above 100mW should use the NSBA144EDXV6T1G (500mW) or EMB2T2R (150mW). Exceeding the maximum power rating will cause device failure.

Q: What does MSL 1 (Unlimited) moisture sensitivity mean?

A: MSL 1 (Unlimited) indicates that the component has no moisture sensitivity restrictions. The part does not require special moisture-controlled storage or handling procedures. All substitute parts carry the same MSL 1 rating as the PEMB2,115, ensuring identical storage and handling requirements.

Q: How do the Vce saturation specifications differ among substitutes?

A: The PEMB2,115 specifies Vce saturation of 150mV maximum at 500µA base current and 10mA collector current. The NSBA144EDXV6T1G specifies 250mV at 300µA, 10mA; the EMB2T2R specifies 300mV at 500µA, 10mA; and the RN2904FE,LF specifies 300mV at 250µA, 5mA. Higher saturation voltages indicate slightly higher on-state voltage drops. For switching applications with tight voltage margin requirements, the NSBA144EDXV6T1G (250mV) is preferred over the EMB2T2R or RN2904FE,LF (300mV).

Q: Are transition frequency specifications important for substitution?

A: Transition frequency (fT) is not specified for the PEMB2,115. The EMB2T2R specifies 250MHz and the RN2904FE,LF specifies 200MHz. These specifications indicate high-frequency performance capability. For DC switching applications, transition frequency is not a critical parameter. For applications involving signal frequencies above 100MHz, the EMB2T2R (250MHz) provides the highest specified performance margin.