PEMB16,115 Pre-Biased Dual PNP Transistor Equivalent & Substitute Parts

Part Overview

The PEMB16,115 is a pre-biased dual PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc., designed for surface mount applications in SOT-666 packaging. This component integrates two PNP transistors with internal biasing resistors, rated for 50V collector-emitter breakdown voltage and 100mA maximum collector current with 300mW power dissipation.

The PEMB16,115 carries an obsolete product status. Locating equivalent substitute components is necessary to maintain design continuity and ensure component availability for production and repair applications. Substitute parts must maintain electrical compatibility across critical parameters including voltage ratings, current specifications, and internal resistor configurations.

Key Parameters

Parameter	Value	Unit
Transistor Type	2 PNP - Pre-Biased (Dual)	—
Voltage - Collector Emitter Breakdown (Max)	50	V
Current - Collector (Ic) (Max)	100	mA
Power - Max	300	mW
Resistor - Base (R1)	22	kOhms
Resistor - Emitter Base (R2)	47	kOhms
DC Current Gain (hFE) (Min)	80	@ 5mA, 5V
Vce Saturation (Max)	150	mV @ 500µA, 10mA
Current - Collector Cutoff (Max)	1	µA
Mounting Type	Surface Mount	—
Package / Case	SOT-563, SOT-666	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the PEMB16,115 are qualified based on strict electrical and mechanical parameter alignment. The following criteria determine substitution eligibility:

Critical Matching Parameters:

Transistor configuration: 2 PNP - Pre-Biased (Dual)
Voltage rating: 50V collector-emitter breakdown (maximum)
Current rating: 100mA maximum collector current
Internal base resistor (R1): 22kOhms
Internal emitter-base resistor (R2): 47kOhms (or 22kOhms where specified)
Surface mount technology with compatible package options (SOT-563 or SOT-666)
RoHS3 compliance and MSL Level 1 rating

Acceptable Parameter Variations:

Power dissipation rating may exceed 300mW (higher ratings provide design margin)
DC current gain (hFE) minimum values of 70 or higher satisfy the 80 minimum specification at different test conditions
Vce saturation values up to 300mV are acceptable for pre-biased transistor applications
Collector cutoff current (ICBO) variations within specified ranges maintain functional equivalence
Transition frequency specifications (where provided) do not restrict substitution for DC-biased applications

All substitute parts listed maintain active product status, ensuring ongoing availability and manufacturer support.

Parameter Comparison

Parameter	PEMB16,115 (Nexperia)	NSBA124XDXV6T1G (onsemi)	RN2903FE(TE85L,F) (Toshiba)	RN2908FE(TE85L,F) (Toshiba)
Transistor Type	2 PNP - Pre-Biased (Dual)	2 PNP - Pre-Biased (Dual)	2 PNP - Pre-Biased (Dual)	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100 mA	100 mA	100 mA	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V	50 V	50 V	50 V
Resistor - Base (R1)	22 kOhms	22 kOhms	22 kOhms	22 kOhms
Resistor - Emitter Base (R2)	47 kOhms	47 kOhms	22 kOhms	47 kOhms
DC Current Gain (hFE) (Min)	80 @ 5mA, 5V	80 @ 5mA, 10V	70 @ 10mA, 5V	80 @ 10mA, 5V
Vce Saturation (Max)	150 mV @ 500µA, 10mA	250 mV @ 1mA, 10mA	300 mV @ 250µA, 5mA	300 mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	1 µA	500 nA	100 nA (ICBO)	100 nA (ICBO)
Power - Max	300 mW	500 mW	100 mW	100 mW
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666	SOT-563, SOT-666
Supplier Device Package	SOT-666	SOT-563	ES6	ES6
Product Status	Obsolete	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	RoHS Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

NSBA124XDXV6T1G (onsemi)

The NSBA124XDXV6T1G maintains full electrical equivalence to the PEMB16,115 across all critical parameters. This part carries active product status with ROHS3 compliance and MSL Level 1 rating. The 500mW power rating provides increased thermal margin compared to the original 300mW specification. The SOT-563 package option offers space optimization for compact designs. This substitute is suitable for direct replacement in applications where the original SOT-666 package footprint can accommodate SOT-563 dimensions or where design flexibility permits package migration.

RN2903FE(TE85L,F) (Toshiba Semiconductor and Storage)

The RN2903FE(TE85L,F) qualifies as a functional substitute with active product status and RoHS compliance. This part maintains the 50V voltage rating, 100mA current rating, and 22kOhms base resistor specification. The internal emitter-base resistor differs at 22kOhms (versus 47kOhms in the original), which affects biasing characteristics in specific circuit topologies. The 200MHz transition frequency specification and 100mW power rating indicate suitability for higher-frequency applications. The ES6 package represents a distinct form factor requiring PCB layout verification before implementation.

RN2908FE(TE85L,F) (Toshiba Semiconductor and Storage)

The RN2908FE(TE85L,F) provides the closest electrical match to the PEMB16,115, with identical internal resistor configuration (22kOhms R1, 47kOhms R2) and matching DC current gain specification (80 minimum). Active product status, ROHS3 compliance, and MSL Level 1 rating ensure manufacturing continuity. The 200MHz transition frequency and 100mW power rating define the performance envelope. The ES6 package requires footprint compatibility assessment. This substitute is recommended for applications requiring maximum parameter alignment with the original component.

All three substitute parts satisfy RoHS3 compliance and MSL Level 1 moisture sensitivity requirements, ensuring compatibility with standard manufacturing and storage protocols.

Frequently Asked Questions (FAQ)

Q: Can the NSBA124XDXV6T1G replace the PEMB16,115 in existing designs?

A: The NSBA124XDXV6T1G maintains electrical equivalence across voltage, current, and internal resistor specifications. Substitution is valid provided the PCB layout accommodates the SOT-563 package footprint. The 500mW power rating exceeds the original 300mW specification, providing additional thermal margin. Verify package pinout compatibility before implementation.

Q: What is the significance of the internal resistor values (R1 and R2)?

A: The internal base resistor (R1) and emitter-base resistor (R2) determine the pre-biasing characteristics of the transistor. The PEMB16,115 specifies 22kOhms (R1) and 47kOhms (R2). The RN2903FE uses 22kOhms for both resistors, while the RN2908FE and NSBA124XDXV6T1G match the original 22kOhms/47kOhms configuration. Resistor value differences affect base current and switching behavior in specific circuit applications.

Q: Are the Toshiba RN2903FE and RN2908FE interchangeable?

A: Both Toshiba parts maintain the same voltage and current ratings, but differ in the internal emitter-base resistor value. The RN2903FE uses 22kOhms (R2), while the RN2908FE uses 47kOhms (R2), matching the original PEMB16,115 specification. Select based on circuit biasing requirements and internal resistor configuration needs.

Q: What packaging options are available for substitutes?

A: The PEMB16,115 is supplied in SOT-666 packaging. Substitute parts offer multiple package options: NSBA124XDXV6T1G in SOT-563, and both Toshiba parts in ES6 package. All packages are surface mount technology. Verify PCB footprint compatibility and pinout alignment before selecting a substitute based on package type.

Q: Do all substitute parts meet RoHS compliance requirements?

A: All three substitute parts carry RoHS compliance certification. The NSBA124XDXV6T1G and RN2908FE are ROHS3 compliant. The RN2903FE carries RoHS compliance designation. All parts maintain MSL Level 1 (Unlimited) moisture sensitivity rating, suitable for standard manufacturing environments.

Q: What is the difference between the original part's 300mW power rating and the substitute parts' ratings?

A: The PEMB16,115 is rated for 300mW maximum power dissipation. The NSBA124XDXV6T1G is rated for 500mW, providing increased thermal capacity. The Toshiba parts (RN2903FE and RN2908FE) are rated for 100mW, indicating lower power dissipation capability. Select based on circuit power requirements and thermal management considerations.

Q: Can the RN2903FE be used where the RN2908FE is specified?

A: Both parts share identical voltage, current, and frequency specifications. The primary difference is the internal emitter-base resistor value (22kOhms versus 47kOhms). Substitution is valid only if the circuit design accommodates the different biasing characteristics resulting from the resistor value change. Verify circuit simulation or testing before implementation.

Q: Are there any package footprint compatibility issues between SOT-666 and SOT-563?

A: SOT-666 and SOT-563 are distinct package formats with different physical dimensions and pinout configurations. Direct PCB footprint substitution is not possible without layout modification. Verify pinout alignment and footprint dimensions in component datasheets before selecting a substitute based on package type.

Q: What is the product status significance for component selection?

A: The PEMB16,115 carries obsolete product status, indicating discontinued manufacturing and limited availability. All three substitute parts carry active product status, ensuring ongoing production, manufacturer support, and long-term supply chain reliability. Active status is recommended for new designs and production applications.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message