PEMB15,115 Equivalent & Substitute Parts

Part Overview

The PEMB15,115 is a pre-biased dual PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. in SOT-666 surface mount packaging. This component integrates two PNP transistors with internal base biasing resistors, designed for switching and amplification applications requiring 50V collector-emitter breakdown voltage and 100mA maximum collector current.

The PEMB15,115 carries an obsolete product status. Identification of equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Substiute Parts

PEMB15,115

Nexperia USA Inc.In Stock: 1237PEMB15,115 Datasheet

Current PartRFQ

RN2901FE(TE85L,F)

Toshiba Semiconductor and StorageIn Stock: 2041RN2901FE(TE85L,F) Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the PEMB15,115 is determined by strict equivalence across the following critical parameters:

Mandatory Matching Parameters:

• Transistor configuration: 2 PNP - Pre-Biased (Dual)
• Maximum collector current: 100mA
• Collector-emitter breakdown voltage: 50V
• Internal base resistor (R1): 4.7kOhms
• Internal emitter-base resistor (R2): 4.7kOhms
• DC current gain (hFE) minimum: 30 @ 10mA, 5V
• Mounting type: Surface Mount
• Package compatibility: SOT-563 or SOT-666

The RN2901FE(TE85L,F) manufactured by Toshiba Semiconductor and Storage satisfies all mandatory matching parameters. This substitute maintains functional equivalence for applications requiring pre-biased dual PNP transistor operation within the specified electrical envelope.

Parameter Comparison

Engineering Selection Recommendations

The RN2901FE(TE85L,F) is the qualified substitute for the obsolete PEMB15,115 based on the following engineering criteria:

Electrical Equivalence: Both components share identical specifications for collector current (100mA), collector-emitter breakdown voltage (50V), internal biasing resistors (4.7kOhms each), and DC current gain (30 @ 10mA, 5V). These parameters define the functional operating envelope for pre-biased dual PNP transistor applications.

Compliance Status: The RN2901FE(TE85L,F) maintains active product status with RoHS compliance certification, ensuring long-term supply availability and regulatory alignment. The PEMB15,115 obsolete status necessitates transition to an active equivalent.

Package Compatibility: Both components utilize SOT-563 and SOT-666 surface mount packaging, enabling direct physical substitution in existing printed circuit board layouts without redesign.

Moisture Sensitivity: Both components carry MSL Level 1 (Unlimited) rating, indicating identical handling and storage requirements.

Secondary Parameter Differences: The RN2901FE(TE85L,F) exhibits lower collector cutoff current (100nA versus 1µA) and higher saturation voltage (300mV versus 150mV) under different test conditions. These differences reflect manufacturer-specific characterization methods and do not preclude functional substitution in standard switching applications. The Toshiba substitute demonstrates superior leakage characteristics. Power dissipation rating differs (100mW versus 300mW); applications must confirm thermal requirements remain within the 100mW limit of the substitute.

Frequently Asked Questions (FAQ)

Q: Can the RN2901FE(TE85L,F) directly replace the PEMB15,115 in existing designs?

A: Yes. Both components are pre-biased dual PNP transistors with identical collector current (100mA), breakdown voltage (50V), and internal biasing resistor values (4.7kOhms). Surface mount packaging (SOT-563, SOT-666) is identical, enabling direct board-level substitution without layout modification.

Q: What is the significance of the different Vce saturation specifications?

A: The PEMB15,115 specifies 150mV saturation at 500µA base current and 10mA collector current. The RN2901FE(TE85L,F) specifies 300mV saturation at 250µA base current and 5mA collector current. These represent different test conditions established by each manufacturer. Both values remain within acceptable saturation ranges for standard switching applications. Applications requiring specific saturation voltage performance should evaluate both datasheets against circuit requirements.

Q: Are there packaging differences between these components?

A: Both components support SOT-563 and SOT-666 surface mount packages. The PEMB15,115 supplier device package is SOT-666. The RN2901FE(TE85L,F) supplier device package is ES6. Verify specific package selection with component suppliers to ensure physical compatibility with existing board designs.

Q: What is the impact of the 100mW power rating on the RN2901FE(TE85L,F) substitute?

A: The PEMB15,115 is rated for 300mW maximum power dissipation. The RN2901FE(TE85L,F) is rated for 100mW. Applications must confirm that actual power dissipation in the circuit remains below 100mW. Thermal analysis of the specific application is required to validate this constraint.

Q: Are both components RoHS compliant?

A: Yes. The PEMB15,115 is ROHS3 Compliant. The RN2901FE(TE85L,F) is RoHS Compliant. Both components meet regulatory requirements for lead-free manufacturing and hazardous substance restrictions.

Q: What is the difference in product status between these components?

A: The PEMB15,115 carries obsolete product status, indicating Nexperia has discontinued manufacturing and support. The RN2901FE(TE85L,F) carries active product status, indicating Toshiba continues manufacturing, maintains supply availability, and provides ongoing technical support. Active status ensures long-term component availability for production requirements.

Q: Do both components have identical moisture sensitivity requirements?

A: Yes. Both components carry MSL Level 1 (Unlimited) rating, indicating unlimited shelf life and no moisture bake-out requirements prior to soldering. Handling and storage procedures are identical.