PEMB13,115 Pre-Biased Dual PNP Transistor Equivalent & Substitute Parts

Part Overview

The PEMB13,115 is a pre-biased dual PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. in SOT-666 surface mount packaging. This component integrates two PNP transistors with internal biasing resistors, designed for 50V operation at maximum 100mA collector current and 300mW power dissipation.

The PEMB13,115 carries a "Not For New Designs" product status, indicating that Nexperia has discontinued active development and support for this part number. This status necessitates identification of functionally equivalent alternatives that maintain electrical and mechanical compatibility for existing applications or new designs requiring equivalent performance characteristics.

Key Parameters

Parameter	Value	Unit
Transistor Type	2 PNP - Pre-Biased (Dual)	—
Maximum Collector Current (Ic)	100	mA
Collector-Emitter Breakdown Voltage (Max)	50	V
Base Resistor (R1)	4.7	kOhms
Emitter-Base Resistor (R2)	47	kOhms
DC Current Gain (hFE Min)	100	@ 10mA, 5V
Vce Saturation (Max)	100	mV @ 250µA, 5mA
Maximum Power Dissipation	300	mW
Package Type	SOT-666	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the PEMB13,115 is determined by strict alignment of the following critical parameters:

Transistor Configuration: The main part is a dual PNP pre-biased transistor. Substitute parts must maintain the same PNP polarity and dual configuration with integrated biasing resistors.

Electrical Ratings: All substitute parts must support minimum 50V collector-emitter breakdown voltage and 100mA maximum collector current to ensure operation within the original design envelope.

Internal Biasing Resistors: The base resistor (R1) and emitter-base resistor (R2) values must match the original specification (4.7kOhms and 47kOhms respectively) to preserve circuit biasing characteristics and switching behavior.

Package Compatibility: While the main part uses SOT-666 packaging, substitute parts in SOT-563 packaging are electrically equivalent and mechanically compatible for surface mount applications, as both packages contain identical pin configurations for dual transistor arrays.

Compliance Standards: All substitute parts must maintain ROHS3 compliance and MSL Level 1 rating to ensure environmental and moisture handling compatibility.

The following substitute parts meet these criteria:

NSBA143ZDXV6T1G (onsemi): Dual PNP pre-biased, 50V, 100mA, matching internal resistor values, SOT-563 package
NSBC143ZDXV6T1G (onsemi): Dual NPN pre-biased alternative, 50V, 100mA, matching internal resistor values, SOT-563 package
RN2906FE(TE85L,F) (Toshiba): Dual PNP pre-biased, 50V, 100mA, matching internal resistor values, ES6 package

The DDC143TH-7 (Diodes Incorporated) is a dual NPN pre-biased transistor that differs in polarity and does not include the emitter-base resistor specification; this part is listed for reference but represents a functional alternative only when NPN polarity is acceptable in the application.

Parameter Comparison

Parameter	PEMB13,115 (Nexperia)	NSBA143ZDXV6T1G (onsemi)	NSBC143ZDXV6T1G (onsemi)	RN2906FE(TE85L,F) (Toshiba)	DDC143TH-7 (Diodes)
Transistor Type	2 PNP - Pre-Biased	2 PNP - Pre-Biased	2 NPN - Pre-Biased	2 PNP - Pre-Biased	2 NPN - Pre-Biased
Ic (Max)	100 mA	100 mA	100 mA	100 mA	100 mA
Vce Breakdown (Max)	50 V	50 V	50 V	50 V	50 V
R1 (Base Resistor)	4.7 kOhms	4.7 kOhms	4.7 kOhms	4.7 kOhms	4.7 kOhms
R2 (Emitter-Base Resistor)	47 kOhms	47 kOhms	47 kOhms	47 kOhms	Not Specified
hFE (Min)	100 @ 10mA, 5V	80 @ 5mA, 10V	80 @ 5mA, 10V	80 @ 10mA, 5V	100 @ 1mA, 5V
Vce Saturation (Max)	100 mV @ 250µA, 5mA	250 mV @ 1mA, 10mA	250 mV @ 1mA, 10mA	300 mV @ 250µA, 5mA	300 mV @ 250µA, 2.5mA
Power (Max)	300 mW	500 mW	500 mW	100 mW	150 mW
Package	SOT-666	SOT-563	SOT-563	ES6	SOT-563
Product Status	Not For New Designs	Last Time Buy	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	RoHS Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: NSBC143ZDXV6T1G (onsemi)

The NSBC143ZDXV6T1G is the preferred substitute for new designs and production transitions. This part maintains active product status with full manufacturer support, ensuring long-term availability and technical documentation. It provides ROHS3 compliance and MSL Level 1 rating identical to the original PEMB13,115. The SOT-563 package is mechanically compatible with existing PCB layouts designed for SOT-666 components. The 500mW power rating exceeds the original 300mW specification, providing additional thermal margin. All critical electrical parameters—50V breakdown voltage, 100mA collector current, and matching internal resistor values (4.7kOhms and 47kOhms)—align with the original design requirements.

Secondary Recommendation: NSBA143ZDXV6T1G (onsemi)

The NSBA143ZDXV6T1G is suitable for applications requiring PNP polarity preservation. This part carries "Last Time Buy" status, indicating limited future availability. It maintains all electrical compatibility with the PEMB13,115, including 50V breakdown voltage, 100mA collector current, and matching internal resistor configuration. The 500mW power rating provides thermal headroom. ROHS3 compliance and MSL Level 1 rating are maintained. Selection of this part should account for its discontinuation trajectory.

Tertiary Recommendation: RN2906FE(TE85L,F) (Toshiba)

The RN2906FE(TE85L,F) is an active product suitable for applications where PNP polarity is required and ES6 package compatibility exists. This part maintains 50V breakdown voltage, 100mA collector current, and matching internal resistor values. The 100mW power rating is lower than the original specification and requires verification that thermal dissipation requirements do not exceed this limit. RoHS compliance is confirmed. This part is appropriate for designs with existing ES6 package footprints.

Not Recommended for Direct Substitution: DDC143TH-7 (Diodes Incorporated)

The DDC143TH-7 is a dual NPN pre-biased transistor and represents a functional alternative only when circuit polarity can be reversed. The emitter-base resistor (R2) value is not specified, preventing confirmation of biasing equivalence. This part is suitable only for applications where NPN polarity is acceptable and biasing characteristics have been independently verified.

Frequently Asked Questions (FAQ)

Q: Can the PEMB13,115 be directly replaced with NSBC143ZDXV6T1G in existing designs?

A: The NSBC143ZDXV6T1G is electrically compatible with the PEMB13,115 for all critical parameters: 50V breakdown voltage, 100mA collector current, and matching internal resistor values (4.7kOhms and 47kOhms). However, the NSBC143ZDXV6T1G is a dual NPN transistor, while the PEMB13,115 is dual PNP. Direct substitution requires circuit polarity reversal. If PNP polarity must be preserved, use NSBA143ZDXV6T1G instead.

Q: What is the difference between SOT-666 and SOT-563 packages?

A: Both SOT-666 and SOT-563 are surface mount packages for dual transistor arrays with identical electrical pin configurations. SOT-563 is a smaller package footprint. PCB layouts designed for SOT-666 can accommodate SOT-563 components through standard package conversion techniques. Verify mechanical clearance and solder pad compatibility with your PCB design before implementation.

Q: Why is the PEMB13,115 marked "Not For New Designs"?

A: This status indicates that Nexperia has discontinued active development and support for this part number. Existing inventory may remain available, but no future product improvements or technical updates are planned. For new designs, selection of an active product status part (such as NSBC143ZDXV6T1G) ensures long-term availability and manufacturer support.

Q: Are all substitute parts ROHS3 compliant?

A: NSBC143ZDXV6T1G, NSBA143ZDXV6T1G, and DDC143TH-7 are ROHS3 compliant. RN2906FE(TE85L,F) is RoHS compliant. All parts maintain MSL Level 1 (Unlimited) moisture sensitivity rating, matching the original PEMB13,115 specification.

Q: What is the significance of the internal resistor values (R1 and R2)?

A: The base resistor (R1 = 4.7kOhms) and emitter-base resistor (R2 = 47kOhms) determine the biasing characteristics and switching behavior of the pre-biased transistor. These values must match the original specification to ensure equivalent circuit performance. Substitute parts with different resistor values will exhibit different biasing and switching characteristics and are not direct equivalents.

Q: Can RN2906FE(TE85L,F) be used if power dissipation is a concern?

A: The RN2906FE(TE85L,F) has a maximum power rating of 100mW, compared to the PEMB13,115 specification of 300mW. This part is suitable only for applications where thermal dissipation does not exceed 100mW. If your application requires the full 300mW thermal budget, use NSBA143ZDXV6T1G or NSBC143ZDXV6T1G, both rated at 500mW.

Q: What is "Last Time Buy" status?

A: "Last Time Buy" status indicates that a manufacturer has announced the end of production for a part number. Existing inventory may be available for a limited period, but no new production runs are planned. Parts with this status should be used only for existing production support or as interim solutions. For long-term applications, transition to an active product status part.

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