PEMB10,115 Equivalent & Substitute Parts

Part Overview

The PEMB10,115 is a pre-biased dual PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. in SOT-666 surface mount packaging. This component integrates two PNP transistors with internal biasing resistors, designed for switching and amplification applications requiring 50V collector-emitter breakdown voltage and 100mA maximum collector current.

The PEMB10,115 carries a "Not For New Designs" product status, indicating that Nexperia has discontinued active development and support for this part number. Organizations using this transistor in current production or maintenance applications require equivalent substitute components that maintain electrical and mechanical compatibility while offering active manufacturer support and continued availability.

Key Parameters

Parameter	Value	Unit
Transistor Type	2 PNP Pre-Biased (Dual)	—
Current - Collector (Ic) (Max)	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	2.2	kOhms
Resistor - Emitter Base (R2)	47	kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	100	mV @ 250µA, 5mA
Power - Max	300	mW
Package / Case	SOT-666	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the PEMB10,115 is determined by strict equivalence across the following critical parameters:

Electrical Equivalence Criteria:

Transistor configuration: Dual PNP pre-biased topology
Maximum collector current: 100mA
Collector-emitter breakdown voltage: 50V
Internal base resistor (R1): 2.2kOhms
Internal emitter-base resistor (R2): 47kOhms
Surface mount packaging: SOT-666 or compatible pinout

Compliance & Environmental Criteria:

RoHS3 compliance
Moisture sensitivity level MSL 1
ECCN classification: EAR99
HTSUS code: 8541.21.0095

The RN2905FE,LF(CT manufactured by Toshiba Semiconductor and Storage meets all electrical equivalence criteria and maintains full compliance with environmental and regulatory requirements. This substitute is classified as an active product with ongoing manufacturer support, addressing the obsolescence status of the PEMB10,115.

Parameter Comparison

Parameter	PEMB10,115 (Nexperia)	RN2905FE,LF(CT (Toshiba)	Match Status
Transistor Type	2 PNP Pre-Biased (Dual)	2 PNP - Pre-Biased (Dual)	Equivalent
Current - Collector (Ic) (Max)	100 mA	100 mA	Equivalent
Voltage - Collector Emitter Breakdown (Max)	50 V	50 V	Equivalent
Resistor - Base (R1)	2.2 kOhms	2.2 kOhms	Equivalent
Resistor - Emitter Base (R2)	47 kOhms	47 kOhms	Equivalent
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 5V	80 @ 10mA, 5V	Toshiba lower by 20%
Vce Saturation (Max) @ Ib, Ic	100 mV @ 250µA, 5mA	300 mV @ 250µA, 5mA	Toshiba higher by 200mV
Current - Collector Cutoff (Max)	1 µA	100 nA (ICBO)	Toshiba lower (better)
Power - Max	300 mW	100 mW	Toshiba lower by 200mW
Package / Case	SOT-666	ES6	Compatible pinout
Mounting Type	Surface Mount	Surface Mount	Equivalent
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Equivalent
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	Equivalent
Product Status	Not For New Designs	Active	Substitute is active

Engineering Selection Recommendations

Primary Substitute: RN2905FE,LF(CT

The RN2905FE,LF(CT is the qualified equivalent for PEMB10,115 replacement. Selection is based on the following engineering factors:

Compliance & Support:

RN2905FE,LF(CT maintains active product status with ongoing manufacturer support from Toshiba Semiconductor and Storage
Both components are ROHS3 compliant and carry identical MSL 1 ratings
Both components share the same ECCN (EAR99) and HTSUS classifications

Electrical Compatibility:

Core electrical parameters (Ic, Vce breakdown, internal resistor values) are identical
DC current gain differential (80 vs. 100 @ 10mA, 5V) represents a 20% reduction in the Toshiba device
Vce saturation is higher in the Toshiba device (300mV vs. 100mV), indicating slightly reduced switching efficiency
Collector cutoff current is lower in the Toshiba device (100nA vs. 1µA), representing improved leakage performance

Packaging & Mechanical:

Both components use surface mount technology with compatible pinout configurations
ES6 package (Toshiba) and SOT-666 package (Nexperia) maintain electrical and mechanical compatibility for PCB integration

Power Dissipation Consideration:

The RN2905FE,LF(CT has a maximum power rating of 100mW compared to 300mW for the PEMB10,115
Applications requiring sustained power dissipation above 100mW require thermal analysis to confirm the Toshiba device is suitable for the specific use case

Organizations transitioning from PEMB10,115 to RN2905FE,LF(CT should conduct functional validation in their specific application context, particularly for circuits operating near maximum power or current specifications.

Frequently Asked Questions (FAQ)

Q: Can RN2905FE,LF(CT directly replace PEMB10,115 in existing PCB designs?

A: Yes. Both components share identical internal resistor configurations (R1 = 2.2kOhms, R2 = 47kOhms), maximum collector current (100mA), and collector-emitter breakdown voltage (50V). The ES6 and SOT-666 packages maintain compatible pinout and footprint geometry for surface mount assembly.

Q: What is the significance of the DC current gain difference (100 vs. 80)?

A: The PEMB10,115 specifies a minimum hFE of 100 at 10mA collector current and 5V Vce, while the RN2905FE,LF(CT specifies 80 under identical conditions. This 20% reduction in current gain may affect switching speed and base drive requirements in circuits with tight gain specifications. Applications with gain-dependent biasing should be evaluated.

Q: Why is the Vce saturation voltage higher in the RN2905FE,LF(CT?

A: The RN2905FE,LF(CT exhibits 300mV saturation voltage compared to 100mV for the PEMB10,115 at identical bias conditions (250µA base current, 5mA collector current). This indicates different transistor geometry and doping profiles between manufacturers. Circuits relying on deep saturation for logic-level switching should account for this 200mV difference in voltage drop calculations.

Q: Is the lower power rating (100mW vs. 300mW) a limitation?

A: The RN2905FE,LF(CT maximum power dissipation is 100mW compared to 300mW for the PEMB10,115. Applications operating continuously near or above 100mW require thermal analysis. For typical switching applications with low duty cycles, the 100mW rating is generally sufficient. High-power linear amplification circuits may require the higher power budget of the original part.

Q: Are both components suitable for automotive applications?

A: The PEMB10,115 carries AEC-Q101 automotive qualification. The RN2905FE,LF(CT specifications provided do not include automotive qualification data. Applications requiring automotive-grade components should confirm Toshiba qualification status independently.

Q: What is the difference between SOT-666 and ES6 packaging?

A: SOT-666 and ES6 are surface mount package designations for dual transistor configurations. Both maintain compatible pinout and footprint dimensions for PCB integration. Component placement and reflow parameters may differ slightly between manufacturers; consult specific datasheets for assembly process requirements.

Q: Are there any moisture sensitivity or storage differences?

A: Both components carry MSL 1 (Unlimited) moisture sensitivity ratings, indicating no moisture-related storage restrictions. Handling and storage procedures are equivalent between the two parts.

Q: Can the RN2905FE,LF(CT be used in new designs?

A: Yes. The RN2905FE,LF(CT carries an active product status from Toshiba Semiconductor and Storage, making it suitable for new design implementations. The PEMB10,115 is marked "Not For New Designs," making the Toshiba device the appropriate choice for ongoing development.

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