PDTC115EE,115 Pre-Biased NPN Transistor Equivalent & Substitute Parts

Part Overview

The PDTC115EE,115 is a pre-biased NPN bipolar junction transistor manufactured by NXP USA Inc., designed for surface mount applications in the SC-75 (SOT-416) package. This component integrates internal base and emitter resistors (100 kOhms each) to simplify circuit design in switching and logic applications. The part is classified as obsolete, necessitating identification of active equivalent and substitute components that maintain functional compatibility within specified electrical and mechanical parameters.

Substiute Parts

PDTC115EE,115
NXP USA Inc.In Stock: 1176PDTC115EE,115 Datasheet
PDTC115EE,115
Current Part
DTC114EETL
Rohm SemiconductorIn Stock: 506373DTC114EETL Datasheet
DTC114EETL
MFR Recommended
DTC115EET1G
onsemiIn Stock: 2312DTC115EET1G Datasheet
DTC115EET1G
MFR Recommended
DTC115EETL
Rohm SemiconductorIn Stock: 85186DTC115EETL Datasheet
DTC115EETL
MFR Recommended
DTC123EETL
Rohm SemiconductorIn Stock: 20377DTC123EETL Datasheet
DTC123EETL
MFR Recommended
DTC124EETL
Rohm SemiconductorIn Stock: 905263DTC124EETL Datasheet
DTC124EETL
MFR Recommended
DTC143EETL
Rohm SemiconductorIn Stock: 38151DTC143EETL Datasheet
DTC143EETL
MFR Recommended
DTC144EETL
Rohm SemiconductorIn Stock: 593029DTC144EETL Datasheet
DTC144EETL
MFR Recommended
DTD543EETL
Rohm SemiconductorIn Stock: 2450DTD543EETL Datasheet
DTD543EETL
MFR Recommended
PDTC115EM,315
Nexperia USA Inc.In Stock: 1088PDTC115EM,315 Datasheet
PDTC115EM,315
MFR Recommended
PDTC115EMB,315
NXP SemiconductorsIn Stock: 190529PDTC115EMB,315 Datasheet
PDTC115EMB,315
MFR Recommended
PDTC115ET,215
Nexperia USA Inc.In Stock: 1340PDTC115ET,215 Datasheet
PDTC115ET,215
MFR Recommended
PDTC115EU,115
Nexperia USA Inc.In Stock: 3805PDTC115EU,115 Datasheet
PDTC115EU,115
MFR Recommended

Key Parameters

Parameter Value Unit
Transistor Type NPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max) 50 V
Current - Collector (Ic) (Max) 20 mA
Power - Max 150 mW
Resistor - Base (R1) 100 kOhms
Resistor - Emitter Base (R2) 100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 1 µA
Package / Case SC-75, SOT-416
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the PDTC115EE,115 is determined by the following critical parameters:

Primary Compatibility Criteria:

  • Transistor Type: NPN - Pre-Biased
  • Voltage - Collector Emitter Breakdown (Max): 50 V minimum
  • Package / Case: SC-75 or SOT-416 (surface mount compatibility)
  • Mounting Type: Surface Mount
  • Resistor - Base (R1) and Resistor - Emitter Base (R2): 100 kOhms (internal bias network)

Secondary Compatibility Criteria:

  • Current - Collector (Ic) (Max): 20 mA or greater
  • Power - Max: 150 mW or greater
  • DC Current Gain (hFE) (Min): 80 or greater at specified conditions
  • RoHS3 Compliance and MSL rating

Substitute parts are grouped into two categories:

Category A - Direct Electrical Equivalents (Identical Internal Bias Resistors): Parts with R1 = 100 kOhms and R2 = 100 kOhms, matching the PDTC115EE,115 bias network configuration. These parts maintain identical switching characteristics and require no circuit redesign.

Category B - Functional Substitutes (Different Internal Bias Resistors): Parts with alternative R1 and R2 values that provide different bias characteristics. These parts are electrically compatible but may require circuit evaluation for specific applications due to altered switching thresholds and current gain characteristics.

Parameter Comparison

Part Number Manufacturer Ic (Max) mA Vce Breakdown (Max) V R1 (kOhms) R2 (kOhms) hFE (Min) @ Ic, Vce Power (Max) mW Package Status
PDTC115EE,115 NXP USA Inc. 20 50 100 100 80 @ 5mA, 5V 150 SC-75 Obsolete
DTC115EET1G onsemi 100 50 100 100 80 @ 5mA, 10V 200 SC-75 Active
DTC115EETL Rohm Semiconductor 20 50 100 100 82 @ 5mA, 5V 150 SC-75 Active
DTC114EETL Rohm Semiconductor 50 50 10 10 30 @ 5mA, 5V 150 SC-75 Active
DTC124EETL Rohm Semiconductor 30 50 22 22 56 @ 5mA, 5V 150 SC-75 Active
DTC123EETL Rohm Semiconductor 100 50 2.2 2.2 20 @ 20mA, 5V 150 SC-75 Active
DTC143EETL Rohm Semiconductor 100 50 4.7 4.7 30 @ 10mA, 5V 150 SC-75 Active
DTC144EETL Rohm Semiconductor 100 50 47 47 68 @ 5mA, 5V 150 SC-75 Active
DTD543EETL Rohm Semiconductor 500 12 4.7 4.7 115 @ 100mA, 2V 150 SC-75 Active
PDTC115EM,315 Nexperia USA Inc. 20 50 100 100 80 @ 5mA, 5V 250 SOT-883 Active
PDTC115EMB,315 NXP Semiconductors 20 50 100 100 80 @ 5mA, 5V 250 DFN1006B-3 Active

Engineering Selection Recommendations

Primary Recommendation - Direct Electrical Equivalent:

DTC115EETL (Rohm Semiconductor) is the primary substitute for PDTC115EE,115. This part maintains identical internal bias resistor values (R1 = 100 kOhms, R2 = 100 kOhms), matching collector current rating (20 mA), and equivalent DC current gain characteristics. The part is active in production, ROHS3 compliant, and available in SC-75 package. Substitution requires no circuit modification.

Secondary Recommendation - Enhanced Current Capability:

DTC115EET1G (onsemi) provides identical bias resistor configuration with increased collector current rating (100 mA) and power dissipation (200 mW). This part is suitable for applications requiring higher current headroom while maintaining the same switching characteristics. Active production status and ROHS3 compliance confirmed.

Alternative Substitutes - Different Bias Networks:

Parts DTC114EETL, DTC124EETL, DTC123EETL, DTC143EETL, and DTC144EETL offer functional substitution with alternative internal bias resistor values. These parts maintain 50 V breakdown voltage and SC-75 package compatibility but feature different base and emitter resistor configurations. Selection of these alternatives requires circuit evaluation to confirm compatibility with specific application bias requirements.

Not Recommended:

DTD543EETL features reduced collector-emitter breakdown voltage (12 V versus 50 V) and is not suitable for direct substitution in circuits designed for 50 V operation.

Package Alternatives:

PDTC115EM,315 (SOT-883 package) and PDTC115EMB,315 (DFN1006B-3 package) provide electrical equivalence with alternative surface mount packages. These parts are suitable only if PCB layout and assembly equipment support the specified package format.

Frequently Asked Questions (FAQ)

Q1: Can DTC115EETL directly replace PDTC115EE,115 without circuit modification?

A: Yes. DTC115EETL maintains identical internal bias resistor values (100 kOhms base, 100 kOhms emitter), matching collector current rating (20 mA), and equivalent DC current gain (82 @ 5mA, 5V versus 80 @ 5mA, 5V). No circuit redesign is required. Both parts are ROHS3 compliant with MSL 1 rating.

Q2: What is the difference between Category A and Category B substitutes?

A: Category A substitutes (DTC115EET1G, DTC115EETL) feature identical internal bias resistor networks (100 kOhms each), ensuring identical switching thresholds and bias characteristics. Category B substitutes (DTC114EETL, DTC124EETL, DTC123EETL, DTC143EETL, DTC144EETL) feature different bias resistor values, resulting in altered switching characteristics and current gain behavior. Category A parts require no circuit evaluation; Category B parts require application-specific assessment.

Q3: Why is DTD543EETL not recommended as a substitute?

A: DTD543EETL features a maximum collector-emitter breakdown voltage of 12 V, compared to 50 V for PDTC115EE,115. This reduced voltage rating makes it unsuitable for circuits designed to operate at 50 V. Substitution would result in component failure or reduced reliability.

Q4: Are package alternatives (SOT-883, DFN1006B-3) electrically equivalent?

A: PDTC115EM,315 (SOT-883) and PDTC115EMB,315 (DFN1006B-3) are electrically equivalent to PDTC115EE,115, maintaining identical bias resistor values, current ratings, and DC gain characteristics. However, these parts feature different physical packages. Substitution is only feasible if PCB layout, footprint, and assembly equipment support the alternative package format.

Q5: What parameters determine substitution compatibility?

A: Primary compatibility parameters are: (1) Transistor Type (NPN - Pre-Biased), (2) Collector-Emitter Breakdown Voltage (50 V minimum), (3) Package format (SC-75 or equivalent), (4) Internal bias resistor values (for direct equivalents), and (5) Collector current rating (20 mA or greater). Secondary parameters include power dissipation, DC current gain, and saturation voltage characteristics.

Q6: Is RoHS3 compliance maintained across all recommended substitutes?

A: Yes. All recommended substitute parts (DTC115EETL, DTC115EET1G, PDTC115EM,315, PDTC115EMB,315) are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating, matching the compliance profile of PDTC115EE,115.

Q7: What is the inventory status of recommended substitutes?

A: DTC115EETL (Rohm Semiconductor) has 85,100 units in stock. DTC115EET1G (onsemi) has 2,215 units in stock. PDTC115EM,315 (Nexperia USA Inc.) has 1,019 units in stock. PDTC115EMB,315 (NXP Semiconductors) has 190,426 units in stock. Inventory levels support immediate procurement for production applications.

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