PDTA144EE,115 Pre-Biased PNP Transistor Equivalent & Substitute Parts

Part Overview

The PDTA144EE,115 is a pre-biased PNP bipolar junction transistor (BJT) manufactured by NXP USA Inc. in SC-75 (SOT-416) surface mount package. This device integrates internal base and emitter-base resistors (both 47 kOhms) for simplified circuit design in switching and amplification applications. The part is classified as obsolete, necessitating identification of active equivalent and substitute components that maintain functional compatibility within specified electrical and mechanical parameters.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP - Pre-Biased	—
Maximum Collector Current (Ic)	100	mA
Collector-Emitter Breakdown Voltage (Max)	50	V
Base Resistor (R1)	47	kOhms
Emitter-Base Resistor (R2)	47	kOhms
DC Current Gain (hFE) Min @ Ic, Vce	80 @ 5mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	150mV @ 500µA, 10mA	—
Collector Cutoff Current (ICBO)	100	nA
Maximum Power Dissipation	150	mW
Mounting Type	Surface Mount	—
Package / Case	SC-75, SOT-416	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the PDTA144EE,115 is determined by strict adherence to the following electrical and mechanical criteria:

Primary Substitution Criteria:

Transistor type: PNP - Pre-Biased configuration
Maximum collector current: 100 mA (minimum requirement)
Collector-emitter breakdown voltage: 50 V (minimum requirement)
Internal resistor configuration: R1 (base resistor) and/or R2 (emitter-base resistor) at 47 kOhms
Maximum power dissipation: 150 mW or greater
Surface mount packaging with compatible footprint dimensions
RoHS3 compliance and MSL 1 rating

Substitution Categories:

Category A - Direct Functional Equivalents (SC-75/SOT-416 Package): Parts maintaining identical package form factor and dual resistor configuration (R1 and R2 both 47 kOhms).

Category B - Diodes Incorporated DDTA144 Series (R2-Only Configuration): Parts with emitter-base resistor (R2) only at 47 kOhms, available in SOT-23-3, SOT-523, and SOT-323 packages. These devices feature 250 MHz transition frequency and higher power ratings (200 mW).

Category C - Diodes Incorporated DDTA144 Series (R1-Only Configuration): Parts with base resistor (R1) only at 47 kOhms, available in SOT-23-3, SOT-523, and SOT-323 packages. These devices feature 250 MHz transition frequency and higher power ratings (200 mW).

Category D - Rohm Semiconductor DTA Series (Dual Resistor Configuration): Parts with both R1 and R2 resistors but at different values (10 kOhms, 22 kOhms, 100 kOhms, or 2.2 kOhms), available in SC-75/SOT-416 package. These devices feature 250 MHz transition frequency and different current handling characteristics.

Parameter Comparison

Part Number	Manufacturer	Ic (Max) mA	Vce(br) V	R1 kOhms	R2 kOhms	hFE Min @ Ic, Vce	Vce Sat (Max) mV @ Ib, Ic	ICBO nA	Power mW	Package	Status
PDTA144EE,115	NXP USA Inc.	100	50	47	47	80 @ 5mA, 5V	150 @ 500µA, 10mA	100	150	SC-75	Obsolete
DDTA144GCA-7-F	Diodes Inc.	100	50	—	47	68 @ 5mA, 5V	300 @ 500µA, 10mA	500	200	SOT-23-3	Active
DDTA144GE-7-F	Diodes Inc.	100	50	—	47	68 @ 5mA, 5V	300 @ 500µA, 10mA	500	150	SOT-523	Active
DDTA144GUA-7-F	Diodes Inc.	100	50	—	47	68 @ 5mA, 5V	300 @ 500µA, 10mA	500	200	SOT-323	Active
DDTA144TCA-7-F	Diodes Inc.	100	50	47	—	100 @ 1mA, 5V	300 @ 250µA, 2.5mA	500	200	SOT-23-3	Active
DDTA144TE-7-F	Diodes Inc.	100	50	47	—	100 @ 1mA, 5V	300 @ 250µA, 2.5mA	500	150	SOT-523	Active
DDTA144TUA-7-F	Diodes Inc.	100	50	47	—	100 @ 1mA, 5V	300 @ 250µA, 2.5mA	500	200	SOT-323	Active
DTA114EETL	Rohm Semiconductor	100	50	10	10	30 @ 5mA, 5V	300 @ 500µA, 10mA	500	150	SC-75	Active
DTA115EETL	Rohm Semiconductor	20	50	100	100	82 @ 5mA, 5V	300 @ 250µA, 5mA	500	150	SC-75	Active
DTA123EETL	Rohm Semiconductor	100	50	2.2	2.2	20 @ 20mA, 5V	300 @ 500µA, 10mA	500	150	SC-75	Active
DTA124EETL	Rohm Semiconductor	30	50	22	22	56 @ 5mA, 5V	300 @ 500µA, 10mA	500	150	SC-75	Active

Engineering Selection Recommendations

For Direct Package Compatibility (SC-75/SOT-416):

DTA114EETL (Rohm Semiconductor) maintains identical SC-75 package form factor with 100 mA collector current capability and 50 V breakdown voltage. This part features dual resistor configuration with 10 kOhms values (R1 and R2), lower DC current gain (30 @ 5mA, 5V), and active product status with RoHS3 compliance and MSL 1 rating. Selection of this part requires circuit validation for the reduced hFE specification.

DTA123EETL (Rohm Semiconductor) maintains SC-75 package with 100 mA collector current and 50 V breakdown voltage. Dual resistor configuration uses 2.2 kOhms values (R1 and R2), resulting in significantly lower DC current gain (20 @ 20mA, 5V). This part is suitable only for applications where lower gain is acceptable or beneficial.

DTA124EETL (Rohm Semiconductor) maintains SC-75 package but limits collector current to 30 mA maximum. Dual resistor configuration uses 22 kOhms values (R1 and R2). This part is not suitable for applications requiring 100 mA collector current.

DTA115EETL (Rohm Semiconductor) maintains SC-75 package but limits collector current to 20 mA maximum. Dual resistor configuration uses 100 kOhms values (R1 and R2). This part is not suitable for applications requiring 100 mA collector current.

For Active Product Status with Alternative Packages:

DDTA144TCA-7-F (Diodes Incorporated) provides SOT-23-3 package with 100 mA collector current, 50 V breakdown voltage, and base resistor (R1) only at 47 kOhms. Higher DC current gain (100 @ 1mA, 5V) and 200 mW power rating. Active product status with RoHS3 compliance and MSL 1 rating. Requires PCB layout modification for SOT-23-3 footprint.

DDTA144TUA-7-F (Diodes Incorporated) provides SOT-323 package with 100 mA collector current, 50 V breakdown voltage, and base resistor (R1) only at 47 kOhms. Higher DC current gain (100 @ 1mA, 5V) and 200 mW power rating. Active product status with RoHS3 compliance and MSL 1 rating. Requires PCB layout modification for SOT-323 footprint.

DDTA144TE-7-F (Diodes Incorporated) provides SOT-523 package with 100 mA collector current, 50 V breakdown voltage, and base resistor (R1) only at 47 kOhms. Higher DC current gain (100 @ 1mA, 5V) and 150 mW power rating. Active product status with RoHS3 compliance and MSL 1 rating. Requires PCB layout modification for SOT-523 footprint.

DDTA144GCA-7-F (Diodes Incorporated) provides SOT-23-3 package with 100 mA collector current, 50 V breakdown voltage, and emitter-base resistor (R2) only at 47 kOhms. Lower DC current gain (68 @ 5mA, 5V) and 200 mW power rating. Active product status with RoHS3 compliance and MSL 1 rating. Requires PCB layout modification for SOT-23-3 footprint.

DDTA144GUA-7-F (Diodes Incorporated) provides SOT-323 package with 100 mA collector current, 50 V breakdown voltage, and emitter-base resistor (R2) only at 47 kOhms. Lower DC current gain (68 @ 5mA, 5V) and 200 mW power rating. Active product status with RoHS3 compliance and MSL 1 rating. Requires PCB layout modification for SOT-323 footprint.

DDTA144GE-7-F (Diodes Incorporated) provides SOT-523 package with 100 mA collector current, 50 V breakdown voltage, and emitter-base resistor (R2) only at 47 kOhms. Lower DC current gain (68 @ 5mA, 5V) and 150 mW power rating. Active product status with RoHS3 compliance and MSL 1 rating. Requires PCB layout modification for SOT-523 footprint.

Frequently Asked Questions (FAQ)

Q: Can DDTA144 series parts with R1-only or R2-only configuration directly replace the PDTA144EE,115 which has both R1 and R2?

A: DDTA144 parts with single resistor configuration (R1-only or R2-only) alter the circuit biasing network. The PDTA144EE,115 integrates both 47 kOhms resistors for specific biasing characteristics. DDTA144TCA-7-F, DDTA144TE-7-F, and DDTA144TUA-7-F (R1-only series) and DDTA144GCA-7-F, DDTA144GE-7-F, and DDTA144GUA-7-F (R2-only series) require circuit analysis to confirm functional equivalence in the target application.

Q: What is the primary difference between Diodes Incorporated DDTA144 R1-only and R2-only series?

A: R1-only series (TCA, TE, TUA variants) integrate base resistor only, providing higher DC current gain (100 @ 1mA, 5V) and lower saturation voltage (300mV @ 250µA, 2.5mA). R2-only series (GCA, GE, GUA variants) integrate emitter-base resistor only, providing lower DC current gain (68 @ 5mA, 5V) and higher saturation voltage (300mV @ 500µA, 10mA). Selection depends on circuit biasing requirements.

Q: Why does DTA115EETL have a maximum collector current of only 20 mA when the PDTA144EE,115 supports 100 mA?

A: DTA115EETL is designed for lower current applications with 100 kOhms internal resistor values (R1 and R2). This part is not suitable for applications requiring 100 mA collector current operation.

Q: Are all substitute parts RoHS3 compliant and MSL 1 rated like the original PDTA144EE,115?

A: All substitute parts listed in this document are RoHS3 compliant and MSL 1 (Unlimited) rated, matching the original part's environmental and handling specifications.

Q: What package options are available for active PDTA144EE,115 substitutes?

A: Active substitutes are available in SC-75 (SOT-416), SOT-23-3, SOT-323, and SOT-523 packages. SC-75 package maintains original form factor. SOT-23-3, SOT-323, and SOT-523 packages require PCB layout modification but offer smaller footprints and higher power ratings in some variants.

Q: How do the DC current gain specifications differ between the original and substitute parts?

A: PDTA144EE,115 specifies 80 @ 5mA, 5V. DTA114EETL provides 30 @ 5mA, 5V (lower gain). DDTA144 R1-only series provides 100 @ 1mA, 5V (higher gain at lower current). DDTA144 R2-only series provides 68 @ 5mA, 5V (comparable to original). DTA123EETL provides 20 @ 20mA, 5V (significantly lower gain). DTA124EETL provides 56 @ 5mA, 5V (lower gain). Selection requires application-specific gain requirements.

Q: What is the significance of the 250 MHz transition frequency in Diodes Incorporated DDTA144 parts?

A: Diodes Incorporated DDTA144 series specifies 250 MHz transition frequency, indicating higher frequency capability compared to the original PDTA144EE,115 specification. This parameter is relevant for high-frequency switching applications but does not affect low-frequency DC switching performance.

Q: Can DTA123EETL be used as a direct replacement despite its lower DC current gain?

A: DTA123EETL maintains SC-75 package, 100 mA collector current, and 50 V breakdown voltage. However, its DC current gain of 20 @ 20mA, 5V is significantly lower than the original 80 @ 5mA, 5V. This part is suitable only for applications where lower gain is acceptable or where the circuit design compensates for reduced gain through external biasing.

Q: What are the power dissipation differences between substitute parts?

A: PDTA144EE,115 and most Rohm DTA series parts specify 150 mW maximum power. Diodes Incorporated DDTA144 SOT-23-3 and SOT-323 variants specify 200 mW maximum power, providing higher thermal headroom. SOT-523 variants specify 150 mW maximum power. Selection should consider circuit power requirements and thermal management.

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