PDTA143EE,115 Pre-Biased PNP Transistor Equivalent & Substitute Parts

Part Overview

The PDTA143EE,115 is a pre-biased PNP bipolar junction transistor (BJT) manufactured by NXP USA Inc. in SC-75 surface mount packaging. This device integrates internal base and emitter resistors (4.7 kOhms each) for simplified circuit design, rated at 50 V collector-emitter breakdown voltage with 100 mA maximum collector current and 150 mW power dissipation. The part is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and production continuity. Substitute parts must maintain electrical compatibility across collector current, voltage ratings, and internal resistor values while accommodating different package formats and manufacturer specifications.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP - Pre-Biased	—
Current - Collector (Ic) Max	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	4.7	kOhms
Resistor - Emitter Base (R2)	4.7	kOhms
DC Current Gain (hFE) Min @ Ic, Vce	30 @ 10mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	150	mV @ 500µA, 10mA
Power - Max	150	mW
Mounting Type	Surface Mount	—
Package / Case	SC-75, SOT-416	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the PDTA143EE,115 is determined by strict equivalence across the following critical parameters:

Primary Substitution Criteria:

Transistor type: PNP pre-biased configuration
Maximum collector current: 100 mA
Collector-emitter breakdown voltage: 50 V
Internal base resistor (R1): 4.7 kOhms
Internal emitter-base resistor (R2): 4.7 kOhms
Power dissipation: minimum 150 mW

Secondary Compatibility Factors:

Surface mount mounting type
RoHS3 compliance and MSL rating
DC current gain characteristics at specified test conditions
Saturation voltage performance

Substitute parts are grouped into three categories based on package format: SC-75/SOT-416 (direct package equivalent), SOT-23-3 (compact alternative), and SOT-523 (ultra-miniature alternative). Each substitute maintains the 4.7 kOhm internal resistor network and 100 mA collector current rating. Parts with different internal resistor values (DTA114EETL, DTA115EETL, DTA123EETL, DTA124EETL) are listed as functional alternatives for applications where the internal resistor network differs but overall circuit behavior remains compatible within specified operating ranges.

Parameter Comparison

Part Number	Manufacturer	Ic Max (mA)	Vce Breakdown (V)	R1 (kOhms)	R2 (kOhms)	hFE Min @ Ic, Vce	Vce Sat Max (mV)	Power Max (mW)	Package	Status
PDTA143EE,115	NXP USA Inc.	100	50	4.7	4.7	30 @ 10mA, 5V	150 @ 500µA, 10mA	150	SC-75	Obsolete
DDTA143TCA-7-F	Diodes Incorporated	100	50	4.7	—	100 @ 1mA, 5V	300 @ 250µA, 2.5mA	200	SOT-23-3	Active
DDTA143TE-7-F	Diodes Incorporated	100	50	4.7	—	100 @ 1mA, 5V	300 @ 250µA, 2.5mA	150	SOT-523	Active
DTA114EETL	Rohm Semiconductor	100	50	10	10	30 @ 5mA, 5V	300 @ 500µA, 10mA	150	EMT3	Active
DTA115EETL	Rohm Semiconductor	20	50	100	100	82 @ 5mA, 5V	300 @ 250µA, 5mA	150	EMT3	Active
DTA123EETL	Rohm Semiconductor	100	50	2.2	2.2	20 @ 20mA, 5V	300 @ 500µA, 10mA	150	EMT3	Active
DTA124EETL	Rohm Semiconductor	30	50	22	22	56 @ 5mA, 5V	300 @ 500µA, 10mA	150	EMT3	Active
DTA143EE-TP	Micro Commercial Co	100	50	4.7	4.7	30 @ 10mA, 5V	300 @ 500µA, 10mA	150	SOT-523	Active
DTA143EET1G	onsemi	100	50	4.7	4.7	15 @ 5mA, 10V	250 @ 1mA, 10mA	200	SC-75	Active
DTA143EETL	Rohm Semiconductor	100	50	4.7	4.7	30 @ 10mA, 5V	300 @ 500µA, 10mA	150	EMT3	Active
DTA143EKAT146	Rohm Semiconductor	100	50	4.7	4.7	30 @ 10mA, 5V	300 @ 500µA, 10mA	200	SOT-23-3	Active

Engineering Selection Recommendations

Direct Electrical Equivalents (4.7 kOhm Internal Resistors, 100 mA Collector Current):

The following parts provide direct functional equivalence to PDTA143EE,115 with identical internal resistor networks and collector current ratings:

DTA143EET1G (onsemi): SC-75 package, active status, 200 mW power rating, suitable for direct replacement in existing SC-75 footprints
DTA143EETL (Rohm Semiconductor): EMT3 package, active status, 150 mW power rating, highest inventory availability (32,300 pcs)
DTA143EE-TP (Micro Commercial Co): SOT-523 package, active status, 150 mW power rating, ultra-miniature form factor
DDTA143TE-7-F (Diodes Incorporated): SOT-523 package, active status, 150 mW power rating
DDTA143TCA-7-F (Diodes Incorporated): SOT-23-3 package, active status, 200 mW power rating
DTA143EKAT146 (Rohm Semiconductor): SOT-23-3 package, active status, 200 mW power rating, largest inventory (227,300 pcs)

All recommended direct equivalents maintain RoHS3 compliance, MSL 1 rating, and 50 V collector-emitter breakdown voltage. Selection between these parts depends on PCB footprint requirements and available package compatibility.

Functional Alternatives (Different Internal Resistor Networks):

Parts with modified internal resistor values are suitable for applications where circuit design accommodates different base and emitter-base resistance:

DTA114EETL (Rohm Semiconductor): 10 kOhm internal resistors, 100 mA collector current, EMT3 package
DTA123EETL (Rohm Semiconductor): 2.2 kOhm internal resistors, 100 mA collector current, EMT3 package
DTA124EETL (Rohm Semiconductor): 22 kOhm internal resistors, 30 mA collector current, EMT3 package
DTA115EETL (Rohm Semiconductor): 100 kOhm internal resistors, 20 mA collector current, EMT3 package

These alternatives are active products with RoHS3 compliance and MSL 1 rating. Use only when circuit design permits modification of internal bias network characteristics.

Frequently Asked Questions (FAQ)

Q: Can DDTA143TCA-7-F replace PDTA143EE,115 in existing designs?

A: DDTA143TCA-7-F provides electrical equivalence with 100 mA collector current and 50 V breakdown voltage. However, the package changes from SC-75 to SOT-23-3, requiring PCB layout modification. The internal resistor network differs (R1 specified as 4.7 kOhms; R2 not specified in datasheet). Electrical performance is compatible for most applications, but physical footprint redesign is necessary.

Q: What is the difference between DTA143EETL and DTA143EET1G?

A: Both parts maintain 4.7 kOhm internal resistors and 100 mA collector current. DTA143EETL (Rohm Semiconductor, EMT3 package) specifies 150 mW power dissipation and 300 mV saturation voltage at 500µA base current. DTA143EET1G (onsemi, SC-75 package) specifies 200 mW power dissipation and 250 mV saturation voltage at 1 mA base current. Package format and manufacturer specifications differ; both are active products suitable for replacement.

Q: Why is DTA115EETL listed as a substitute if it has only 20 mA collector current?

A: DTA115EETL is a functional alternative for applications where lower collector current (20 mA maximum) is acceptable. The 100 kOhm internal resistor network provides different bias characteristics. This part is listed as a substitute option only when circuit design permits reduced current handling and modified base bias network. Direct substitution is not recommended for designs requiring 100 mA collector current.

Q: Are all substitute parts RoHS3 compliant?

A: All listed substitute parts are RoHS3 compliant with MSL 1 (unlimited moisture sensitivity level) rating, matching the compliance profile of PDTA143EE,115. Certification status is identical across all recommended alternatives.

Q: What package options are available for direct replacement?

A: Direct electrical equivalents are available in three package formats: SC-75/SOT-416 (DTA143EET1G), EMT3 (DTA143EETL), SOT-23-3 (DTA143EKAT146, DDTA143TCA-7-F), and SOT-523 (DDTA143TE-7-F, DTA143EE-TP). Package selection depends on PCB footprint compatibility and available assembly equipment.

Q: Which substitute has the highest inventory availability?

A: DTA143EKAT146 (Rohm Semiconductor, SOT-23-3 package) has the highest inventory at 227,300 pieces. DTA143EETL (Rohm Semiconductor, EMT3 package) has 32,300 pieces available. Both are active products with immediate availability.

Q: Can DTA123EETL be used as a direct replacement?

A: DTA123EETL is not a direct replacement. While it maintains 100 mA collector current and 50 V breakdown voltage, the internal resistor network is 2.2 kOhms (versus 4.7 kOhms in PDTA143EE,115). This results in different bias characteristics and lower DC current gain (20 @ 20mA, 5V versus 30 @ 10mA, 5V). Use only when circuit design accommodates modified base bias network.

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