PDTA124TK,115 Pre-Biased PNP Transistor Equivalent & Substitute Parts

Part Overview

The PDTA124TK,115 is a pre-biased PNP bipolar junction transistor (BJT) manufactured by NXP USA Inc., designed for surface mount applications in the SOT-23-3 (SMT3) package. This component integrates internal base resistor biasing networks to simplify circuit design in switching and amplification applications. The part is classified as obsolete, making equivalent and substitute parts necessary for ongoing production and maintenance applications. Substitute parts must maintain electrical compatibility across collector current, breakdown voltage, saturation characteristics, and base resistor values while accommodating different package and manufacturer options.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP - Pre-Biased	—
Current - Collector (Ic) Max	100	mA
Voltage - Collector Emitter Breakdown (Max)	50	V
Resistor - Base (R1)	22	kOhms
DC Current Gain (hFE) Min @ Ic, Vce	100 @ 1mA, 5V	—
Vce Saturation (Max) @ Ib, Ic	150mV @ 500µA, 10mA	—
Current - Collector Cutoff (Max)	1	µA
Power - Max	250	mW
Mounting Type	Surface Mount	—
Package / Case	TO-236-3, SC-59, SOT-23-3	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution eligibility for the PDTA124TK,115 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor Type: PNP - Pre-Biased configuration required
Maximum Collector Current: 100 mA (exact match or higher)
Collector-Emitter Breakdown Voltage: 50 V (exact match or higher)
Base Resistor Value: 22 kOhms (exact match required for circuit biasing compatibility)
DC Current Gain (hFE): Minimum 100 @ 1mA, 5V (exact match or higher)
Vce Saturation: Maximum 150 mV @ specified bias conditions (exact match or lower)
Package Compatibility: SOT-23-3 / TO-236-3 / SC-59 surface mount packages
Compliance: RoHS3 compliant, MSL 1 (Unlimited)

Secondary Compatibility Parameters:

Collector Cutoff Current: 1 µA maximum (exact match or lower)
Power Dissipation: 250 mW (exact match or higher)
Mounting Type: Surface Mount required

Substitute parts are grouped into two categories: Direct Electrical Equivalents (matching all primary criteria with identical base resistor values) and Functional Equivalents (matching electrical performance with alternative base resistor values that require circuit evaluation).

Parameter Comparison

Part Number	Manufacturer	Ic Max (mA)	Vce Breakdown (V)	R1 Base (kOhms)	hFE Min @ 1mA, 5V	Vce Sat Max (mV)	Icbo Max (µA/nA)	Power Max (mW)	Package	Status
PDTA124TK,115	NXP USA Inc.	100	50	22	100	150	1 µA	250	SMT3	Obsolete
DDTA124GCA-7-F	Diodes Incorporated	100	50	22	56 @ 5mA, 5V	300	500 nA	200	SOT-23-3	Active
DDTA124TCA-7-F	Diodes Incorporated	100	50	22	100	300	500 nA	200	SOT-23F	Active
DTA114TKAT146	Rohm Semiconductor	100	50	10	100	300	500 nA	200	SMT3	Active
DTA143TKAT146	Rohm Semiconductor	100	50	4.7	100	300	500 nA	200	SMT3	Active
DTB114GKT146	Rohm Semiconductor	500	50	10	56 @ 50mA, 5V	300	500 nA	200	SMT3	Active
MMUN2112LT1G	onsemi	100	50	22	60 @ 5mA, 10V	250	500 nA	246	SOT-23-3	Active
MUN2112T1G	onsemi	100	50	22	60 @ 5mA, 10V	250	500 nA	230	SC-59	Active
PDTA124TT,215	Nexperia USA Inc.	100	50	22	100	150	1 µA	250	TO-236AB	Active

Engineering Selection Recommendations

Direct Electrical Equivalents (Recommended Primary Substitutes):

The PDTA124TT,215 (Nexperia USA Inc.) is the closest functional equivalent, maintaining identical electrical specifications including 22 kOhms base resistor, 100 mA collector current, 50 V breakdown voltage, 150 mV saturation voltage, and 250 mW power rating. This part is active in production and RoHS3 compliant with MSL 1 rating. The primary difference is packaging format (TO-236AB vs. SMT3), which is mechanically compatible within SOT-23-3 footprint specifications.

The DDTA124TCA-7-F (Diodes Incorporated) maintains the 22 kOhms base resistor and 100 mA collector current specifications with identical 50 V breakdown voltage. This part is active and RoHS3 compliant. Saturation voltage increases to 300 mV and power rating decreases to 200 mW, representing acceptable performance trade-offs for most applications. Package format is SOT-23F (flat leads variant).

Functional Equivalents with Base Resistor Variations:

The MMUN2112LT1G and MUN2112T1G (onsemi) both maintain the critical 22 kOhms base resistor value with 100 mA collector current and 50 V breakdown voltage. These parts are active and RoHS3 compliant. DC current gain is specified at different test conditions (60 @ 5mA, 10V vs. 100 @ 1mA, 5V), and saturation voltage is 250 mV. Power ratings are 246 mW and 230 mW respectively. Package options are SOT-23-3 (TO-236) and SC-59.

The DTA114TKAT146 (Rohm Semiconductor) and DTA143TKAT146 (Rohm Semiconductor) feature reduced base resistor values (10 kOhms and 4.7 kOhms respectively) while maintaining 100 mA collector current and 50 V breakdown voltage. These parts are active and RoHS3 compliant. Reduced base resistor values result in different biasing characteristics and require circuit-level evaluation before substitution.

The DTB114GKT146 (Rohm Semiconductor) is a higher-current variant with 500 mA maximum collector current, suitable only for applications requiring increased current capacity. This part is not recommended as a direct substitute for 100 mA applications.

Selection Criteria Based on Product Status and Compliance:

All recommended substitute parts are active in production status, ensuring long-term availability and supply chain stability. All parts maintain RoHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, matching the original part's environmental specifications. Surface mount packaging compatibility is maintained across all recommended substitutes within the SOT-23-3 / TO-236 / SC-59 family.

Frequently Asked Questions (FAQ)

Q: Can DDTA124GCA-7-F replace PDTA124TK,115 in all applications?

A: DDTA124GCA-7-F maintains electrical compatibility for collector current (100 mA), breakdown voltage (50 V), and base resistor value (22 kOhms). However, saturation voltage increases from 150 mV to 300 mV, and power rating decreases from 250 mW to 200 mW. Applications operating near maximum power dissipation or requiring minimum saturation voltage should be evaluated. The part is mechanically compatible within SOT-23-3 footprint specifications.

Q: What is the significance of base resistor value differences between substitutes?

A: The base resistor (R1 or R2) value determines the internal biasing network of pre-biased transistors. The PDTA124TK,115 specifies 22 kOhms. Substitutes with identical 22 kOhms values (DDTA124GCA-7-F, DDTA124TCA-7-F, MMUN2112LT1G, MUN2112T1G, PDTA124TT,215) provide direct biasing compatibility. Substitutes with different values (DTA114TKAT146 with 10 kOhms, DTA143TKAT146 with 4.7 kOhms) alter biasing characteristics and require circuit verification before use.

Q: Are package format differences between SMT3, SOT-23-3, SOT-23F, and SC-59 significant?

A: All these package designations refer to the same three-lead surface mount form factor (TO-236-3 family). SMT3 and SOT-23-3 are equivalent designations. SOT-23F indicates flat leads variant. SC-59 is an alternative designation for the same package. Mechanical compatibility is maintained across all variants for standard SOT-23-3 PCB footprints. Verify specific lead geometry requirements for your application.

Q: Why do some substitutes specify different hFE test conditions?

A: DC current gain (hFE) is dependent on collector current and collector-emitter voltage. The PDTA124TK,115 specifies hFE minimum of 100 @ 1mA, 5V. Some substitutes specify hFE @ 5mA, 10V or other conditions. These represent different operating points. For direct comparison, evaluate hFE values at your specific application bias conditions. Lower hFE values at higher currents are typical transistor behavior.

Q: Is PDTA124TT,215 a direct replacement for PDTA124TK,115?

A: PDTA124TT,215 is manufactured by Nexperia USA Inc. (successor to NXP Semiconductors) and maintains identical electrical specifications: 22 kOhms base resistor, 100 mA collector current, 50 V breakdown voltage, 150 mV saturation voltage, and 250 mW power rating. The primary difference is packaging designation (TO-236AB vs. SMT3), which represents the same physical form factor. This part is the recommended primary substitute for direct replacement.

Q: Can DTB114GKT146 be used as a substitute?

A: DTB114GKT146 is not recommended as a substitute for PDTA124TK,115. While both are 50 V PNP pre-biased transistors, DTB114GKT146 is rated for 500 mA maximum collector current compared to 100 mA for PDTA124TK,115. The higher current rating indicates different internal transistor geometry and biasing network design. Use DTB114GKT146 only in applications specifically requiring 500 mA capability.

Q: What compliance certifications should I verify for substitute parts?

A: All recommended substitute parts maintain RoHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, matching the original PDTA124TK,115 specifications. All parts carry EAR99 export classification and REACH Unaffected status. Verify these certifications with your supplier documentation before procurement to ensure regulatory compliance for your application region.

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