PDTA123YK,115 Equivalent & Substitute Parts Reference

Part Overview

PDTA123YK,115 is a pre-biased PNP bipolar junction transistor (BJT) produced by NXP USA Inc., with a maximum collector-emitter breakdown voltage of 50 V, maximum collector current of 100 mA, and a pre-set base resistor network (R1 = 2.2 kOhms, R2 = 10 kOhms). The device comes in a compact SOT-23-3 package (TO-236-3, SC-59) suitable for surface mount applications. PDTA123YK,115 is classified as obsolete, making it necessary to identify equivalent or substitute parts that meet the same electrical and mechanical criteria to ensure supply continuity and design compatibility.

Key Parameters

Parameter	Value
Transistor Type	PNP - Pre-Biased
Voltage - Collector Emitter Breakdown (Max)	50 V
Current - Collector (Ic) (Max)	100 mA
Resistor - Base (R1)	2.2 kOhms
Resistor - Emitter Base (R2)	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	35 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic	150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)	1µA
Power - Max	250 mW
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
ECCN	EAR99

Substitute Part Grouping Explanation

Substitute and equivalent parts for PDTA123YK,115 are selected strictly based on the following key parameters:

PNP pre-biased transistor configuration
Maximum collector-emitter breakdown voltage (≥ 50 V)
Maximum collector current (≥ 100 mA)
Integrated base and emitter resistor network (R1 = 2.2 kOhms, R2 = 10 kOhms when specified)
Compatible DC current gain/hFE, Vce(sat), and cutoff collector current
Power dissipation ≥ or equivalent
Surface mount package with matching footprint (TO-236-3, SC-59, SOT-23-3 or equivalent)
RoHS compliance, REACH status, ECCN alignment

Only parts explicitly matching these electrical and mechanical parameters are included in this equivalency group.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Category	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Resistor - Base (R1)	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Power - Max	Mounting Type	Package / Case	RoHS Status	REACH Status	ECCN	Part Status
PDTA123YK,115	NXP USA Inc.	Transistors, Bipolar (BJT)	PNP - Pre-Biased	50 V	100 mA	2.2 kOhms	10 kOhms	35 @ 5mA, 5V	150mV @ 500µA, 10mA	1µA	250 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	ROHS3 Compliant	REACH Unaffected	EAR99	Obsolete
DDTA123TCA-7-F	Diodes Incorporated	Transistors, Bipolar (BJT)	PNP - Pre-Biased	50 V	100 mA	2.2 kOhms	-	100 @ 1mA, 5V	300mV @ 500µA, 5mA	500nA	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	ROHS3 Compliant	REACH Unaffected	EAR99	Active
DDTA123TE-7-F	Diodes Incorporated	Transistors, Bipolar (BJT)	PNP - Pre-Biased	50 V	100 mA	2.2 kOhms	-	100 @ 1mA, 5V	300mV @ 500µA, 5mA	500nA	150 mW	Surface Mount	SOT-523	ROHS3 Compliant	REACH Unaffected	EAR99	Active
DDTA123TUA-7-F	Diodes Incorporated	Transistors, Bipolar (BJT)	PNP - Pre-Biased	50 V	100 mA	2.2 kOhms	-	100 @ 1mA, 5V	300mV @ 500µA, 5mA	500nA	200 mW	Surface Mount	SC-70, SOT-323	ROHS3 Compliant	REACH Unaffected	EAR99	Active
DDTA123YCA-7	Diodes Incorporated	Transistors, Bipolar (BJT)	PNP - Pre-Biased	50 V	100 mA	2.2 kOhms	10 kOhms	33 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	ROHS3 Compliant	REACH Unaffected	EAR99	Active
DTA123YCAT116	Rohm Semiconductor	Transistors, Bipolar (BJT)	PNP - Pre-Biased	50 V	100 mA	2.2 kOhms	10 kOhms	22 @ 10mA, 5V	300mV @ 500µA, 10mA	500nA	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	ROHS3 Compliant	REACH Unaffected	EAR99	Active
PDTA123YT,215	Nexperia USA Inc.	Transistors, Bipolar (BJT)	PNP - Pre-Biased	50 V	100 mA	2.2 kOhms	10 kOhms	35 @ 5mA, 5V	150mV @ 500µA, 10mA	1µA	250 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	ROHS3 Compliant	REACH Unaffected	EAR99	Active

Engineering Selection Recommendations

For applications requiring PDTA123YK,115, select only parts with matching RoHS compliance (ROHS3 Compliant), unaffected REACH status, and ECCN classification EAR99. All listed substitute transistors are active or in-production and align with these compliance and regulatory criteria. Confirm mechanical packaging compatibility as part of the engineering part selection process: all substitutes listed offer a Surface Mount solution in TO-236-3, SC-59, SOT-23-3, or equivalent footprints.

Frequently Asked Questions (FAQ)

Q1: What parameters must match to substitute PDTA123YK,115 in an application?
A1: Required matching parameters are transistor type (PNP - Pre-Biased), collector-emitter voltage rating (50 V), maximum collector current (100 mA), base and emitter resistor values (R1 = 2.2 kOhms, R2 = 10 kOhms as applicable), DC current gain, Vce(sat), cutoff collector current, power dissipation, mounting style, and compatible package.

Q2: Are there differences in package types among substitute parts?
A2: Substitute parts are available in TO-236-3, SC-59, SOT-23-3, SOT-323, SOT-523, and equivalent surface mount packages. Confirm PCB footprint compatibility before selection.

Q3: How is compliance ensured for substitute transistors?
A3: All listed substitutes are ROHS3 Compliant, have unaffected REACH status, and are classified under ECCN EAR99.

Q4: Do substitute parts have the same base and emitter resistor values?
A4: Substitute parts specify R1 = 2.2 kOhms. Some models also specify R2 = 10 kOhms, matching the main part. Review the detailed parameters in the comparison table for precise matches.

Q5: Is part status important in selection?
A5: Yes, the main part PDTA123YK,115 is obsolete. Substitute parts are currently active or in production, ensuring supply availability.

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