PDTA113EE,115 Pre-Biased PNP Transistor Equivalent & Substitute Parts

Part Overview

The PDTA113EE,115 is a pre-biased PNP bipolar junction transistor manufactured by NXP USA Inc., designed for surface mount applications in the SC-75 (SOT-416) package. This component operates at 50 V collector-emitter breakdown voltage with a maximum collector current of 100 mA and 150 mW power dissipation. The device features integrated base and emitter-base resistors (1 kOhm each) for simplified circuit design.

The PDTA113EE,115 is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements. Active alternatives with comparable electrical characteristics and package compatibility are available from multiple manufacturers including Diodes Incorporated, Rohm Semiconductor, and Nexperia USA Inc.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP - Pre-Biased	—
Collector Current (Ic) Maximum	100	mA
Collector-Emitter Breakdown Voltage (Vceo)	50	V
Base Resistor (R1)	1	kOhm
Emitter-Base Resistor (R2)	1	kOhm
DC Current Gain (hFE) Minimum	30 @ 40mA, 5V	—
Vce Saturation Maximum	150	mV
Power Dissipation Maximum	150	mW
Package Type	SC-75, SOT-416	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the PDTA113EE,115 is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

Transistor type: PNP pre-biased configuration
Collector-emitter breakdown voltage: 50 V minimum
Collector current rating: 100 mA minimum
Base resistor value: 1 kOhm (for direct pin-compatible replacement)
Power dissipation: 150 mW minimum
Surface mount package compatibility

Secondary Compatibility Factors:

DC current gain (hFE) characteristics at specified test conditions
Vce saturation voltage performance
Collector cutoff current specifications
RoHS3 compliance and MSL rating

Substitute parts are grouped into two categories:

Category A - Direct Package Equivalents (SC-75/SOT-416): Parts maintaining identical package footprint and pin configuration with matching or superior electrical specifications. These include DTA123EETL, DTA114EETL, DTA143EETL, and DTA144EETL from Rohm Semiconductor, and PDTA113EM,315 from Nexperia USA Inc.

Category B - Alternative Package Formats (SOT-523, SOT-323): Parts with equivalent electrical performance but different surface mount packages. These include DDTA113TE-7-F (SOT-523) and DDTA113TUA-7-F (SOT-323) from Diodes Incorporated, requiring PCB layout modification.

Non-Equivalent Part: DTB543EETL operates at 12 V collector-emitter breakdown voltage, which does not meet the 50 V requirement of the PDTA113EE,115 and is not suitable for direct substitution.

Parameter Comparison

Part Number	Manufacturer	Ic (Max) mA	Vceo (Max) V	R1 kOhm	R2 kOhm	hFE Min @ Test	Vce Sat (Max) mV	Power (Max) mW	Package	Status
PDTA113EE,115	NXP USA Inc.	100	50	1	1	30 @ 40mA, 5V	150	150	SC-75	Obsolete
DDTA113TE-7-F	Diodes Incorporated	100	50	1	—	100 @ 1mA, 5V	300	150	SOT-523	Active
DDTA113TUA-7-F	Diodes Incorporated	100	50	1	—	100 @ 1mA, 5V	300	200	SOT-323	Active
DTA114EETL	Rohm Semiconductor	100	50	10	10	30 @ 5mA, 5V	300	150	SC-75	Active
DTA115EETL	Rohm Semiconductor	20	50	100	100	82 @ 5mA, 5V	300	150	SC-75	Active
DTA123EETL	Rohm Semiconductor	100	50	2.2	2.2	20 @ 20mA, 5V	300	150	SC-75	Active
DTA124EETL	Rohm Semiconductor	30	50	22	22	56 @ 5mA, 5V	300	150	SC-75	Active
DTA143EETL	Rohm Semiconductor	100	50	4.7	4.7	30 @ 10mA, 5V	300	150	SC-75	Active
DTA144EETL	Rohm Semiconductor	30	50	47	47	68 @ 5mA, 5V	300	150	SC-75	Active
PDTA113EM,315	Nexperia USA Inc.	100	50	1	1	30 @ 40mA, 5V	150	250	SOT-883	Active

Engineering Selection Recommendations

Direct Replacement (Pin-Compatible, SC-75 Package):

DTA123EETL from Rohm Semiconductor provides the closest functional equivalent with identical 1 kOhm base and emitter-base resistor values. This part maintains the SC-75 package footprint, enabling direct PCB substitution without layout modification. The part is active in production status with ROHS3 compliance and MSL 1 rating, matching the original specification. Vce saturation is 300 mV versus 150 mV on the original, representing a minor performance difference acceptable for most applications.

Alternative with Enhanced Power Handling:

PDTA113EM,315 from Nexperia USA Inc. offers identical electrical characteristics to the PDTA113EE,115 with increased power dissipation capability (250 mW versus 150 mW). This part maintains 1 kOhm resistor values and SC-101 (SOT-883) package compatibility. AEC-Q100 automotive qualification is included. The smaller SOT-883 footprint requires PCB redesign but provides superior thermal performance for power-sensitive applications.

Alternative Package Options (SOT-523, SOT-323):

DDTA113TE-7-F (SOT-523) and DDTA113TUA-7-F (SOT-323) from Diodes Incorporated maintain 1 kOhm base resistor specification with 50 V, 100 mA ratings. These parts feature active production status and ROHS3 compliance. Package conversion requires PCB layout modification. The SOT-323 variant offers 200 mW power dissipation.

Application-Specific Alternatives:

For circuits requiring different base resistor values, DTA114EETL (10 kOhm), DTA143EETL (4.7 kOhm), and DTA124EETL (22 kOhm) provide SC-75 package compatibility with modified bias networks. These selections depend on specific circuit biasing requirements and are not direct pin-for-pin replacements.

DTA115EETL is not recommended as a substitute due to reduced collector current rating (20 mA versus 100 mA).

Frequently Asked Questions (FAQ)

Q: Can DDTA113TE-7-F (SOT-523) be used as a direct replacement for PDTA113EE,115 (SC-75)?

A: DDTA113TE-7-F provides equivalent electrical performance with 50 V, 100 mA, and 1 kOhm base resistor specifications. However, the SOT-523 package has a different footprint and pin configuration than SC-75. Direct PCB substitution is not possible without layout modification. The part is suitable for new designs or redesigned boards.

Q: What is the difference between DTA123EETL and DTA143EETL?

A: Both parts maintain 100 mA collector current and 50 V breakdown voltage in SC-75 packages. DTA123EETL features 2.2 kOhm base and emitter-base resistors with 20 mA hFE test current. DTA143EETL features 4.7 kOhm resistors with 10 mA hFE test current. Selection depends on circuit biasing requirements and desired gain characteristics.

Q: Is PDTA113EM,315 compatible with existing PDTA113EE,115 PCB layouts?

A: PDTA113EM,315 uses SOT-883 package, which has a different footprint than the SC-75 package of PDTA113EE,115. PCB layout modification is required. However, electrical specifications are identical, including 1 kOhm resistor values and 50 V, 100 mA ratings.

Q: Why is DTB543EETL not listed as a substitute?

A: DTB543EETL operates at 12 V collector-emitter breakdown voltage, which does not meet the 50 V requirement of PDTA113EE,115. This part is designed for lower-voltage applications and is not electrically compatible.

Q: What does "pre-biased" mean in the context of these transistors?

A: Pre-biased transistors integrate internal base and emitter-base resistors on the same die. These resistors establish a bias network that allows the transistor to switch with minimal external circuitry. The PDTA113EE,115 includes 1 kOhm resistors for this purpose.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts carry ROHS3 compliance certification. Moisture sensitivity level is MSL 1 (unlimited) for all parts, matching the original specification.

Q: Can DTA115EETL replace PDTA113EE,115 in high-current applications?

A: No. DTA115EETL has a maximum collector current rating of 20 mA, compared to 100 mA for PDTA113EE,115. This part is not suitable for applications requiring 100 mA collector current.

Q: What is the significance of the hFE test conditions listed in the parameter table?

A: DC current gain (hFE) is measured at specific collector current and collector-emitter voltage conditions. Different test conditions produce different gain values. For example, PDTA113EE,115 specifies hFE of 30 at 40 mA and 5 V, while DTA123EETL specifies hFE of 20 at 20 mA and 5 V. These differences reflect different transistor characteristics and biasing behavior.

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