PBSS5250XZ Equivalent & Substitute Parts

Part Overview

The PBSS5250XZ is an active-status PNP bipolar junction transistor manufactured by Nexperia USA Inc., designed for surface mount applications in the SOT-89 package. This component operates at a maximum collector current of 2 A with a 50 V collector-emitter breakdown voltage and 550 mW power dissipation capability. The transistor is qualified to AEC-Q100 automotive standards and carries ROHS3 compliance. Substitute parts are identified based on matching or exceeding the electrical and mechanical specifications required for direct replacement in circuit designs where the PBSS5250XZ is specified.

Key Parameters

Parameter	Value	Unit
Transistor Type	PNP	—
Current - Collector (Ic) (Max)	2	A
Voltage - Collector Emitter Breakdown (Max)	50	V
Power - Max	550	mW
Frequency - Transition	100	MHz
Package / Case	TO-243AA	—
Mounting Type	Surface Mount	—
Operating Temperature (Max)	150	°C
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the PBSS5250XZ are classified based on the following substitution criteria:

Direct Substitutes maintain electrical compatibility through matching or exceeding the following parameters:

Transistor type: PNP
Maximum collector current: ≥ 2 A
Collector-emitter breakdown voltage: ≥ 50 V
Package type: TO-243AA surface mount
RoHS3 compliance
Active product status

Similar Substitutes meet the core electrical requirements but may differ in secondary parameters such as transition frequency, power dissipation, or saturation voltage characteristics. These parts are suitable for applications where the primary circuit function does not depend on the specific secondary parameter variance.

The following substitute parts satisfy these criteria:

2SA2016-TD-E (onsemi): Direct substitute with enhanced current rating (7 A) and power capability (3.5 W)
2DA1213Y-13 (Diodes Incorporated): Similar substitute with matched 2 A current rating and extended temperature range
2SAR553P5T100 (Rohm Semiconductor): Similar substitute with matched 2 A current rating and higher transition frequency (320 MHz)

Parameter Comparison

Parameter	PBSS5250XZ (Nexperia)	2SA2016-TD-E (onsemi)	2DA1213Y-13 (Diodes)	2SAR553P5T100 (Rohm)
Transistor Type	PNP	PNP	PNP	PNP
Current - Collector (Ic) (Max)	2 A	7 A	2 A	2 A
Voltage - Collector Emitter Breakdown (Max)	50 V	50 V	50 V	50 V
Vce Saturation (Max) @ Ib, Ic	380 mV @ 100 mA, 2 A	400 mV @ 40 mA, 2 A	500 mV @ 50 mA, 1 A	400 mV @ 35 mA, 700 mA
Current - Collector Cutoff (Max)	100 nA	100 nA	100 nA	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 1 A, 2 V	200 @ 500 mA, 2 V	120 @ 500 mA, 2 V	180 @ 50 mA, 2 V
Power - Max	550 mW	3.5 W	1 W	500 mW
Frequency - Transition	100 MHz	330 MHz	160 MHz	320 MHz
Operating Temperature (Max)	150 °C	150 °C	150 °C	150 °C
Package / Case	TO-243AA	TO-243AA	TO-243AA	TO-243AA
Supplier Device Package	SOT-89	PCP	SOT-89-3	MPT3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Active	Active	Active	Active

Engineering Selection Recommendations

2SA2016-TD-E (onsemi) is suitable as a direct substitute where circuit design permits higher current and power ratings. This part exceeds the PBSS5250XZ specifications in collector current (7 A vs. 2 A) and power dissipation (3.5 W vs. 550 mW), providing design margin for applications requiring enhanced thermal performance or higher current capacity. The part maintains TO-243AA package compatibility, ROHS3 compliance, and active product status. The transition frequency of 330 MHz exceeds the original specification, supporting higher-frequency circuit operation.

2DA1213Y-13 (Diodes Incorporated) is suitable as a similar substitute for applications where the 2 A collector current and 50 V breakdown voltage are the primary design constraints. This part matches the PBSS5250XZ in maximum collector current and voltage rating. The extended operating temperature range (−55 °C to 150 °C) provides additional thermal margin compared to the original part. The transition frequency of 160 MHz exceeds the original 100 MHz specification. ROHS3 compliance and active product status are maintained. The saturation voltage is higher (500 mV vs. 380 mV), which may affect switching speed in saturation-mode applications.

2SAR553P5T100 (Rohm Semiconductor) is suitable as a similar substitute where the 2 A collector current and 50 V breakdown voltage are required. This part matches the PBSS5250XZ in maximum collector current and voltage rating. The transition frequency of 320 MHz significantly exceeds the original 100 MHz specification, supporting higher-frequency switching applications. Power dissipation (500 mW) is comparable to the original specification. ROHS3 compliance and active product status are maintained. The collector cutoff current is higher (1 µA vs. 100 nA), which may affect leakage characteristics in low-current applications.

All substitute parts carry ROHS3 compliance, unlimited moisture sensitivity level (MSL 1), and active product status, ensuring regulatory alignment and supply continuity with the original PBSS5250XZ specification.

Frequently Asked Questions (FAQ)

Q: Can the 2SA2016-TD-E replace the PBSS5250XZ in all applications?

A: The 2SA2016-TD-E exceeds the electrical specifications of the PBSS5250XZ in collector current (7 A vs. 2 A) and power dissipation (3.5 W vs. 550 mW). It is suitable for direct replacement in applications where these higher ratings do not create circuit design conflicts. The TO-243AA package compatibility ensures mechanical fit. Verify that the higher transition frequency (330 MHz) does not introduce unintended high-frequency behavior in the circuit.

Q: What is the difference between the SOT-89, PCP, SOT-89-3, and MPT3 package designations?

A: These are supplier-specific package designations for the same TO-243AA case outline. SOT-89, PCP, SOT-89-3, and MPT3 all refer to the same physical package with three leads in a surface mount configuration. The different designations reflect manufacturer-specific naming conventions. All substitute parts are mechanically compatible with the original PBSS5250XZ in the TO-243AA package.

Q: Why does the 2DA1213Y-13 have a lower DC current gain (120 vs. 200)?

A: The DC current gain (hFE) specification is measured at different collector current and voltage conditions across the substitute parts. The 2DA1213Y-13 specifies hFE at 500 mA and 2 V, while the PBSS5250XZ specifies hFE at 1 A and 2 V. Lower hFE values require higher base current to achieve the same collector current, which may affect circuit biasing. Verify base drive requirements in the specific application circuit.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The PBSS5250XZ and all three substitute parts (2SA2016-TD-E, 2DA1213Y-13, 2SAR553P5T100) carry ROHS3 compliance certification. All parts are also REACH Unaffected and carry unlimited moisture sensitivity level (MSL 1), ensuring regulatory alignment and handling compatibility.

Q: What is the significance of the higher transition frequency in the substitute parts?

A: The transition frequency (fT) indicates the frequency at which the transistor's current gain drops to unity. The PBSS5250XZ operates at 100 MHz, while the substitutes range from 160 MHz to 330 MHz. Higher transition frequency supports faster switching speeds and higher-frequency circuit operation. In low-frequency applications, this difference is not significant. In high-frequency switching or RF applications, the higher transition frequency of the substitutes may improve performance or reduce switching losses.

Q: Can the 2SAR553P5T100 be used in applications sensitive to collector cutoff current?

A: The 2SAR553P5T100 specifies a maximum collector cutoff current (ICBO) of 1 µA, compared to 100 nA for the PBSS5250XZ. This tenfold increase in leakage current may affect applications with very low standby current requirements or high-impedance biasing networks. For standard switching and amplification applications, this difference is typically negligible. Evaluate the specific circuit's sensitivity to leakage current before substitution.

Q: Is the extended temperature range of the 2DA1213Y-13 beneficial?

A: The 2DA1213Y-13 operates from −55 °C to 150 °C, while the PBSS5250XZ operates to 150 °C maximum. The extended lower temperature limit provides additional thermal margin for applications exposed to cold environments or cryogenic storage conditions. For applications operating within the 0 °C to 150 °C range, this extended specification provides no functional advantage but does not create compatibility issues.

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