PBLS2002S,115 Equivalent & Substitute Parts

Part Overview

The PBLS2002S,115 is a pre-biased bipolar transistor (BJT) manufactured by NXP USA Inc., combining 1 NPN pre-biased and 1 PNP transistor in a single 8-SO surface mount package. This integrated configuration delivers 1.5W power dissipation with dual-transistor functionality for switching and amplification applications. The part is classified as obsolete, necessitating identification of active substitute components that maintain electrical and mechanical compatibility for ongoing production and maintenance requirements.

Key Parameters

Parameter	Value	Unit
Transistor Configuration	1 NPN Pre-Biased, 1 PNP	—
Collector Current (Max) - NPN / PNP	100mA / 3A	A
Collector-Emitter Breakdown Voltage (Max) - NPN / PNP	50V / 20V	V
Base Resistor (R1)	4.7kOhms	Ω
Emitter-Base Resistor (R2)	4.7kOhms	Ω
DC Current Gain (hFE Min) @ Ic, Vce	30 @ 10mA, 5V / 150 @ 2A, 2V	—
Vce Saturation (Max) @ Ib, Ic	150mV @ 500µA, 10mA / 355mV @ 300mA, 3A	V
Transition Frequency	100MHz	MHz
Power Dissipation (Max)	1.5W	W
Package Type	8-SOIC (0.154", 3.90mm Width)	—
Mounting Type	Surface Mount	—
RoHS Status	ROHS3 Compliant	—
MSL Rating	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the PBLS2002S,115 is determined by the following critical parameters:

Electrical Compatibility Criteria:

Transistor configuration: Dual pre-biased transistor pair (NPN + PNP or PNP + PNP)
Base and emitter-base resistor values: 4.7kOhms (both R1 and R2)
Collector current ratings sufficient for application requirements
Collector-emitter breakdown voltages meeting or exceeding circuit voltage specifications
DC current gain (hFE) characteristics within acceptable operating ranges
Transition frequency supporting required switching speeds

Mechanical Compatibility Criteria:

Surface mount package format
Pin count and footprint compatibility
Power dissipation capability

The PBLS2022D,115 qualifies as a substitute based on matching electrical parameters (identical base resistor values, compatible voltage ratings, and equivalent DC current gain specifications) and surface mount configuration. However, the transistor configuration differs (1 PNP Pre-Biased, 1 PNP versus 1 NPN Pre-Biased, 1 PNP), and the package format changes from 8-SO to 6-TSOP, requiring circuit board layout modification.

Parameter Comparison

Parameter	PBLS2002S,115	PBLS2022D,115	Compatibility Notes
Manufacturer	NXP USA Inc.	Nexperia USA Inc.	Related manufacturers
Product Status	Obsolete	Active	Substitute is in active production
Transistor Type	1 NPN Pre-Biased, 1 PNP	1 PNP Pre-Biased, 1 PNP	Configuration differs; circuit topology must be evaluated
Collector Current (Max) - Primary / Secondary	100mA / 3A	100mA / 1.8A	Secondary current reduced; verify application requirements
Collector-Emitter Breakdown (Max) - Primary / Secondary	50V / 20V	50V / 20V	Identical voltage ratings
Base Resistor (R1)	4.7kOhms	4.7kOhms	Identical
Emitter-Base Resistor (R2)	4.7kOhms	4.7kOhms	Identical
DC Current Gain (hFE Min) @ Ic, Vce	30 @ 10mA, 5V / 150 @ 2A, 2V	30 @ 10mA, 5V / 200 @ 1A, 2V	Gain characteristics compatible; secondary gain higher at lower current
Vce Saturation (Max) @ Ib, Ic	150mV @ 500µA, 10mA / 355mV @ 300mA, 3A	150mV @ 500µA, 10mA / 210mV @ 100mA, 1.8A	Primary saturation identical; secondary saturation improved
Transition Frequency	100MHz	130MHz	Substitute offers higher frequency capability
Power Dissipation (Max)	1.5W	760mW	Substitute has reduced power rating; verify thermal requirements
Package / Case	8-SOIC (0.154", 3.90mm Width)	SC-74, SOT-457 (6-TSOP)	Different package; PCB layout modification required
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Both compliant
MSL Rating	1 (Unlimited)	1 (Unlimited)	Identical moisture sensitivity

Engineering Selection Recommendations

Product Status Consideration: The PBLS2002S,115 is classified as obsolete. The PBLS2022D,115 is an active product from Nexperia USA Inc., ensuring ongoing availability and manufacturing support for new designs and production continuity.

Compliance and Certification: Both components maintain ROHS3 compliance and unlimited moisture sensitivity level (MSL 1), satisfying environmental and handling requirements for industrial and commercial applications.

Substitution Feasibility: Direct substitution requires evaluation of the following factors:

Transistor Configuration Change: The PBLS2002S,115 contains 1 NPN pre-biased and 1 PNP transistor, while the PBLS2022D,115 contains 2 PNP pre-biased transistors. Circuit topology and biasing schemes must be reviewed to determine functional equivalence.
Secondary Collector Current: The PBLS2022D,115 secondary transistor maximum collector current is 1.8A compared to 3A in the original part. Applications requiring the full 3A capability must verify that 1.8A is sufficient.
Power Dissipation: The substitute part is rated for 760mW versus 1.5W. Thermal analysis of the application is required to confirm adequate heat dissipation.
Package Footprint: The change from 8-SO to 6-TSOP requires printed circuit board layout modification and re-qualification of assembly processes.

Compliance Verification: Both parts satisfy ROHS3 and REACH requirements. No additional regulatory barriers exist for substitution in compliant applications.

Frequently Asked Questions (FAQ)

Q1: Can the PBLS2022D,115 be used as a direct pin-for-pin replacement for the PBLS2002S,115?

No. The PBLS2022D,115 uses a 6-TSOP package (SC-74, SOT-457) compared to the 8-SOIC package of the original part. Pin count and footprint differ, requiring circuit board redesign. Additionally, the transistor configuration changes from 1 NPN + 1 PNP to 2 PNP, which may affect circuit operation depending on the application topology.

Q2: What are the key electrical parameters that determine substitution compatibility?

Substitution compatibility is determined by: (1) base and emitter-base resistor values (both 4.7kOhms in this case), (2) collector current ratings meeting application requirements, (3) collector-emitter breakdown voltages, (4) DC current gain characteristics, and (5) transition frequency. The PBLS2022D,115 maintains identical resistor values and voltage ratings but differs in transistor configuration and secondary current capability.

Q3: Does the PBLS2022D,115 have sufficient power dissipation for applications using the PBLS2002S,115?

The PBLS2022D,115 is rated for 760mW maximum power dissipation compared to 1.5W for the original part. Applications must be analyzed to determine if the reduced power rating is acceptable. Thermal modeling of the specific circuit application is required.

Q4: Are there any compliance or regulatory differences between these parts?

Both components are ROHS3 compliant and carry unlimited moisture sensitivity level (MSL 1). No regulatory barriers exist for substitution in compliant applications. Both parts are classified as EAR99 for export control purposes.

Q5: What is the impact of the transistor configuration change from NPN+PNP to PNP+PNP?

The configuration change affects circuit biasing and switching behavior. Applications designed around the NPN+PNP combination may require circuit topology modifications to function with the PNP+PNP configuration. Functional equivalence must be verified through circuit analysis and testing.

Q6: Is the higher transition frequency (130MHz vs. 100MHz) of the PBLS2022D,115 a concern?

No. The higher transition frequency of the substitute part (130MHz) is a performance enhancement that does not create compatibility issues. Applications designed for 100MHz operation will function correctly with a component rated for 130MHz.

Q7: What documentation is required before implementing this substitution?

Circuit topology analysis, thermal modeling, package footprint verification, and functional testing are required. The transistor configuration change necessitates detailed evaluation of biasing networks and switching characteristics specific to the application.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message