NZT605 Equivalent & Substitute Parts

Part Overview

The NZT605 is an NPN Darlington bipolar junction transistor manufactured by onsemi, designed for surface mount applications in the SOT-223-4 package. This component operates at a maximum collector-emitter voltage of 110 V with a maximum collector current of 1.5 A and a maximum power dissipation of 1 W. The device is actively produced and RoHS3 compliant, making it suitable for modern electronic applications requiring high-voltage switching and amplification in compact form factors.

Equivalent and substitute parts are identified when component availability is limited, supply chain disruptions occur, or design flexibility is required while maintaining functional compatibility within specified electrical and mechanical parameters.

Key Parameters

Parameter	Value	Unit
Transistor Type	NPN - Darlington	—
Voltage - Collector Emitter Breakdown (Max)	110	V
Current - Collector (Ic) (Max)	1.5	A
Power - Max	1	W
Vce Saturation (Max) @ Ib, Ic	1.5V @ 1mA, 1A	V
DC Current Gain (hFE) (Min) @ Ic, Vce	2000 @ 1A, 5V	—
Frequency - Transition	150	MHz
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package / Case	SOT-223-4 (TO-261-4, TO-261AA)	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the NZT605 is determined by compatibility across the following critical parameters:

Mandatory Compatibility Criteria:

Transistor Type: NPN - Darlington configuration
Package / Case: SOT-223-4 (TO-261-4, TO-261AA) surface mount
Mounting Type: Surface Mount
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level: 1 (Unlimited)

Functional Compatibility Criteria:

Voltage - Collector Emitter Breakdown (Max): Must equal or exceed 110 V
Current - Collector (Ic) (Max): Must equal or exceed 1.5 A
Power - Max: Must equal or exceed 1 W
DC Current Gain (hFE) (Min): Must equal or exceed 2000
Operating Temperature Range: Must encompass or exceed -55°C to 150°C

Substitute parts identified in this reference meet the mandatory criteria but may have reduced voltage, current, or power ratings. Selection depends on the specific application requirements and whether the reduced parameters are acceptable for the intended circuit function.

Parameter Comparison

Parameter	NZT605 (Main)	BSP52T1G	BSP50,115
Manufacturer	onsemi	onsemi	Nexperia USA Inc.
Transistor Type	NPN - Darlington	NPN - Darlington	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	110 V	80 V	45 V
Current - Collector (Ic) (Max)	1.5 A	1 A	1 A
Power - Max	1 W	800 mW	1.25 W
Vce Saturation (Max) @ Ib, Ic	1.5V @ 1mA, 1A	1.3V @ 500µA, 500mA	1.3V @ 500µA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce	2000 @ 1A, 5V	2000 @ 500mA, 10V	2000 @ 500mA, 10V
Frequency - Transition	150 MHz	Not specified	200 MHz
Operating Temperature Range	-55 to 150°C	-65 to 150°C	Up to 150°C
Package / Case	SOT-223-4	SOT-223	SOT-223
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Active	Active	Active

Engineering Selection Recommendations

NZT605 Primary Selection: The NZT605 remains the primary component choice when the full specification envelope is required, particularly for applications demanding the maximum 110 V collector-emitter breakdown voltage and 1.5 A collector current. The device is actively manufactured by onsemi, RoHS3 compliant, and maintains unlimited moisture sensitivity classification.

BSP52T1G Substitution Conditions: The BSP52T1G is a direct substitute when the application circuit operates at or below 80 V collector-emitter voltage and 1 A collector current. This part is manufactured by onsemi, maintaining supply chain consistency. The extended operating temperature range (-65°C to 150°C) provides additional thermal margin compared to the NZT605. Power dissipation is limited to 800 mW, requiring verification that circuit conditions do not exceed this threshold. Both parts share identical RoHS3 compliance and MSL classification.

BSP50,115 Substitution Conditions: The BSP50,115 is suitable only for applications operating at or below 45 V collector-emitter voltage and 1 A collector current. This part is manufactured by Nexperia USA Inc. and includes automotive-grade qualification (AEC-Q101), making it appropriate for automotive applications. Maximum power dissipation is 1.25 W, exceeding the NZT605 specification. The transition frequency of 200 MHz exceeds the NZT605 specification of 150 MHz. RoHS3 compliance and MSL classification are identical to the main part.

Compliance and Certification: All three parts maintain ROHS3 compliance, unlimited moisture sensitivity classification (MSL 1), and active product status. Selection between parts should prioritize voltage and current requirements first, followed by power dissipation and thermal operating range considerations specific to the target application.

Frequently Asked Questions (FAQ)

Q: Can the BSP52T1G replace the NZT605 in all applications?

A: The BSP52T1G is a partial substitute. It is compatible only in circuits where the maximum collector-emitter voltage does not exceed 80 V and the maximum collector current does not exceed 1 A. If the application requires the full 110 V or 1.5 A capability of the NZT605, the BSP52T1G is not suitable.

Q: What is the primary limitation of the BSP50,115 as a substitute?

A: The BSP50,115 has a maximum collector-emitter breakdown voltage of 45 V, which is significantly lower than the NZT605 specification of 110 V. This part is suitable only for low-voltage applications. Additionally, the maximum collector current is limited to 1 A compared to the NZT605 specification of 1.5 A.

Q: Are all three parts available in the same package?

A: All three parts use the SOT-223 surface mount package (TO-261-4, TO-261AA designation). The physical footprint and pin configuration are compatible, allowing direct board-level substitution without layout modifications.

Q: Do the substitute parts have the same RoHS compliance as the NZT605?

A: Yes. Both the BSP52T1G and BSP50,115 are ROHS3 compliant and carry unlimited moisture sensitivity classification (MSL 1), matching the NZT605 specification.

Q: Which substitute part has the widest operating temperature range?

A: The BSP52T1G operates from -65°C to 150°C, providing a 10°C lower minimum temperature compared to the NZT605 specification of -55°C to 150°C. The BSP50,115 operating temperature range is specified up to 150°C without a defined minimum.

Q: Is the BSP50,115 suitable for automotive applications?

A: Yes. The BSP50,115 carries automotive-grade qualification (AEC-Q101) and is manufactured by Nexperia USA Inc. This qualification is not specified for the NZT605 or BSP52T1G.

Q: What is the key difference in power dissipation between these parts?

A: The NZT605 and BSP50,115 both support 1 W and 1.25 W maximum power dissipation respectively. The BSP52T1G is limited to 800 mW, requiring circuit verification to ensure power dissipation does not exceed this threshold during operation.

Q: Can I use the BSP50,115 in place of the NZT605 for high-voltage switching applications?

A: No. The BSP50,115 maximum collector-emitter breakdown voltage is 45 V, which is insufficient for applications requiring the 110 V capability of the NZT605. Using this part in high-voltage circuits will result in device failure.

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