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NVMFS5113PLWFT1G P-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The NVMFS5113PLWFT1G is an active P-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with continuous drain current of 10A at Ta and 64A at Tc. This device is packaged in a 5-DFN (5x6) surface mount configuration and is qualified to AEC-Q101 automotive standards. The part is ROHS3 compliant and carries an MSL rating of 1 (Unlimited).
Substitute parts are identified when equivalent electrical performance and mechanical compatibility can be maintained across the specified parameter set. Alternative packaging formats or inventory availability may necessitate component substitution in production environments.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| FET Type | P-Channel | — |
| Drain to Source Voltage (Vdss) | 60 | V |
| Continuous Drain Current @ 25°C (Ta) | 10 | A |
| Continuous Drain Current @ 25°C (Tc) | 64 | A |
| Rds On (Max) @ 17A, 10V | 14 | mOhm |
| Vgs(th) (Max) @ 250µA | 2.5 | V |
| Gate Charge (Qg) @ 10V | 83 | nC |
| Power Dissipation (Ta) | 3.8 | W |
| Power Dissipation (Tc) | 150 | W |
| Operating Temperature Range | -55 to 175 | °C |
| Mounting Type | Surface Mount | — |
| Package | 5-DFN (5x6) (8-SOFL) | — |
| Grade | Automotive | — |
| Qualification | AEC-Q101 | — |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution of the NVMFS5113PLWFT1G is determined by equivalence across the following critical parameters:
Electrical Equivalence Criteria:
- FET Type: P-Channel topology
- Drain to Source Voltage (Vdss): 60V minimum rating
- Continuous Drain Current: Minimum 10A at Ta, 64A at Tc
- Rds On (Max): 14 mOhm or lower at specified conditions
- Vgs(th): 2.5V or lower at 250µA
- Gate Charge: 83 nC or lower at 10V
- Operating Temperature: -55°C to 175°C minimum range
- Power Dissipation: 3.8W (Ta) and 150W (Tc) minimum
Mechanical Compatibility Criteria:
- Mounting Type: Surface Mount
- Package Format: 5-DFN (5x6) or equivalent footprint
- Lead Configuration: 5-Lead or compatible
Compliance Criteria:
- Automotive Grade qualification (AEC-Q101)
- ROHS3 Compliance
- MSL 1 (Unlimited)
Substitute parts are grouped into two categories: parametric equivalents (identical electrical specifications and package format) and similar alternatives (equivalent electrical performance with different packaging).
Parameter Comparison
| Parameter | NVMFS5113PLWFT1G | NVMFS5113PLT1G | RS1L151ATTB1 |
|---|---|---|---|
| Manufacturer | onsemi | onsemi | Rohm Semiconductor |
| FET Type | P-Channel | P-Channel | P-Channel |
| Vdss | 60V | 60V | 60V |
| Continuous Drain Current (Ta) | 10A | 10A | — |
| Continuous Drain Current (Tc) | 64A | 64A | 56A |
| Rds On (Max) | 14 mOhm @ 17A, 10V | 14 mOhm @ 17A, 10V | 11.3 mOhm @ 15A, 10V |
| Vgs(th) (Max) | 2.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 1mA |
| Gate Charge (Qg) | 83 nC @ 10V | 83 nC @ 10V | 130 nC @ 10V |
| Input Capacitance (Ciss) | 4400 pF @ 25V | 4400 pF @ 25V | 6900 pF @ 30V |
| Power Dissipation (Ta) | 3.8W | 3.8W | 3W |
| Power Dissipation (Tc) | 150W | 150W | — |
| Operating Temperature | -55 to 175°C | -55 to 175°C | Up to 150°C |
| Packaging Format | Tape & Reel (TR) | Cut Tape (CT) & Digi-Reel® | Tape & Reel (TR) |
| Package Type | 5-DFN (5x6) (8-SOFL) | 5-DFN (5x6) (8-SOFL) | 8-HSOP |
| Grade | Automotive | Automotive | Automotive |
| Qualification | AEC-Q101 | AEC-Q101 | — |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| MSL Rating | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
| Product Status | Active | Active | Active |
Engineering Selection Recommendations
NVMFS5113PLT1G (Parametric Equivalent)
The NVMFS5113PLT1G is a parametric equivalent to the NVMFS5113PLWFT1G. Both parts are manufactured by onsemi and share identical electrical specifications, operating temperature range, and package footprint (5-DFN 5x6). The primary difference is packaging format: NVMFS5113PLT1G is supplied in Cut Tape (CT) and Digi-Reel® format, while NVMFS5113PLWFT1G is supplied in Tape & Reel (TR) format. Both parts carry AEC-Q101 automotive qualification and ROHS3 compliance. Selection between these two is determined by supply chain requirements and tape format compatibility with assembly equipment.
RS1L151ATTB1 (Similar Alternative)
The RS1L151ATTB1 manufactured by Rohm Semiconductor is a similar alternative with equivalent P-Channel topology and 60V Vdss rating. This part delivers 56A continuous drain current at Tc, which is 8A lower than the NVMFS5113PLWFT1G specification of 64A. The RS1L151ATTB1 exhibits superior on-resistance performance (11.3 mOhm versus 14 mOhm) and lower power dissipation at Ta (3W versus 3.8W). However, the RS1L151ATTB1 operates to a maximum junction temperature of 150°C, which is 25°C lower than the NVMFS5113PLWFT1G maximum of 175°C. The package format differs: RS1L151ATTB1 uses 8-HSOP versus the 5-DFN footprint of the primary part. This alternative is suitable for applications where the reduced current rating and lower operating temperature ceiling are acceptable, and where the 8-HSOP package footprint can be accommodated on the PCB.
All three parts maintain active product status, automotive-grade qualification, ROHS3 compliance, and MSL 1 rating.
Frequently Asked Questions (FAQ)
Q: Can NVMFS5113PLT1G be used as a direct replacement for NVMFS5113PLWFT1G?
A: Yes. Both parts are parametric equivalents with identical electrical specifications, operating temperature range (-55°C to 175°C), and package footprint (5-DFN 5x6). The only difference is the tape format: NVMFS5113PLWFT1G uses Tape & Reel (TR) while NVMFS5113PLT1G uses Cut Tape (CT) and Digi-Reel®. Compatibility depends on assembly equipment tape format requirements.
Q: What are the key differences between NVMFS5113PLWFT1G and RS1L151ATTB1?
A: The primary differences are: (1) Continuous drain current at Tc is 64A for NVMFS5113PLWFT1G versus 56A for RS1L151ATTB1; (2) Maximum operating temperature is 175°C for NVMFS5113PLWFT1G versus 150°C for RS1L151ATTB1; (3) Package format is 5-DFN (5x6) for NVMFS5113PLWFT1G versus 8-HSOP for RS1L151ATTB1; (4) Gate charge is 83 nC for NVMFS5113PLWFT1G versus 130 nC for RS1L151ATTB1. Both parts share 60V Vdss rating and P-Channel topology.
Q: Is RS1L151ATTB1 suitable for high-temperature automotive applications?
A: The RS1L151ATTB1 operates to a maximum junction temperature of 150°C, which is 25°C lower than the NVMFS5113PLWFT1G maximum of 175°C. Applications requiring sustained operation above 150°C junction temperature require the NVMFS5113PLWFT1G or NVMFS5113PLT1G.
Q: What is the impact of different gate charge values on circuit design?
A: Gate charge (Qg) affects gate drive circuit design and switching speed. NVMFS5113PLWFT1G and NVMFS5113PLT1G both specify 83 nC at 10V, while RS1L151ATTB1 specifies 130 nC at 10V. Higher gate charge requires greater gate drive current or longer switching times. Gate drive circuits designed for 83 nC operation will function with the RS1L151ATTB1 but may exhibit slower switching characteristics.
Q: Are all three parts AEC-Q101 qualified?
A: NVMFS5113PLWFT1G and NVMFS5113PLT1G carry explicit AEC-Q101 automotive qualification. RS1L151ATTB1 is listed as automotive-grade but does not specify AEC-Q101 qualification in the provided parameters. Applications requiring explicit AEC-Q101 qualification should use NVMFS5113PLWFT1G or NVMFS5113PLT1G.
Q: What packaging considerations apply when selecting between these parts?
A: NVMFS5113PLWFT1G uses 5-DFN (5x6) package in Tape & Reel format. NVMFS5113PLT1G uses the same 5-DFN (5x6) package in Cut Tape and Digi-Reel® format. RS1L151ATTB1 uses 8-HSOP package format. PCB footprint compatibility and assembly equipment tape format capabilities determine which part can be used in a given application.
Q: Can these parts be used interchangeably in existing designs?
A: NVMFS5113PLWFT1G and NVMFS5113PLT1G are interchangeable from an electrical and thermal perspective, with selection based on tape format compatibility. RS1L151ATTB1 requires PCB footprint redesign due to different package format (8-HSOP versus 5-DFN) and may require gate drive circuit adjustment due to higher gate charge. Applications with current requirements exceeding 56A at Tc cannot use RS1L151ATTB1.
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