NVMFS4841NT1G N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The NVMFS4841NT1G is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 16A continuous drain current at 25°C (Ta). This device is packaged in a 5-DFN (5x6) surface mount configuration and is qualified to AEC-Q101 automotive standards. The part is currently classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement continuity.

Substiute Parts

NVMFS4841NT1G
onsemiIn Stock: 9005NVMFS4841NT1G Datasheet
NVMFS4841NT1G
Current Part
NVMFS4C310NT1G
onsemiIn Stock: 977NVMFS4C310NT1G Datasheet
NVMFS4C310NT1G
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Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 30 V
Continuous Drain Current @ 25°C (Ta) 16 A
On-State Resistance (Rds On Max) @ 30A, 10V 7 mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA 2.5 V
Gate Charge (Qg Max) @ 4.5V 17 nC
Input Capacitance (Ciss Max) @ 12V 1436 pF
Power Dissipation (Ta) 3.7 W
Operating Temperature Range -55 to 175 °C
Package Type 5-DFN (5x6) 8-SOFL
Qualification Standard AEC-Q101 Automotive

Substitute Part Grouping Explanation

Substitution of the NVMFS4841NT1G is determined by strict equivalence across the following critical parameters:

Mandatory Matching Criteria:

  • Drain-to-Source Voltage (Vdss): 30V minimum
  • Package Type: 5-DFN (5x6) surface mount configuration
  • FET Type: N-Channel MOSFET
  • Qualification: AEC-Q101 automotive grade
  • Operating Temperature Range: -55°C to 175°C

Performance Parameters (Equal or Superior):

  • Continuous Drain Current (Id @ 25°C): Equal to or greater than 16A
  • On-State Resistance (Rds On): Equal to or lower than 7mOhm @ specified conditions
  • Gate Threshold Voltage (Vgs(th)): Within ±20V maximum gate voltage specification
  • Gate Charge (Qg): Comparable switching characteristics
  • Input Capacitance (Ciss): Acceptable for circuit timing requirements

The NVMFS4C310NT1G meets all mandatory criteria and demonstrates improved electrical performance in drain current capacity and on-state resistance, making it a direct functional substitute.

Parameter Comparison

Parameter NVMFS4841NT1G (Main) NVMFS4C310NT1G (Substitute) Unit
Manufacturer onsemi onsemi
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss) 30 30 V
Continuous Drain Current @ 25°C (Ta) 16 17 A
On-State Resistance (Rds On Max) @ 30A, 10V 7 6 mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA 2.5 2.2 V
Gate Charge (Qg Max) 17 @ 4.5V 18.6 @ 10V nC
Input Capacitance (Ciss Max) 1436 @ 12V 1000 @ 15V pF
Maximum Gate Voltage (Vgs) ±20 ±20 V
Power Dissipation (Ta) 3.7 3.5 W
Operating Temperature Range -55 to 175 -55 to 175 °C
Package Type 5-DFN (5x6) 5-DFN (5x6) 8-SOFL
Mounting Type Surface Mount Surface Mount
Product Status Obsolete Active
Grade Automotive Automotive
Qualification AEC-Q101 AEC-Q101
RoHS Status ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

Primary Substitute: NVMFS4C310NT1G

The NVMFS4C310NT1G is the direct equivalent substitute for the obsolete NVMFS4841NT1G. Both devices are manufactured by onsemi and share identical voltage ratings, package configurations, and automotive qualifications.

Substitution Basis:

  1. Voltage Compatibility: Both devices are rated for 30V Vdss, ensuring compatibility with existing circuit voltage specifications.

  2. Package Equivalence: Identical 5-DFN (5x6) surface mount package enables direct PCB layout compatibility without redesign.

  3. Automotive Qualification: Both parts hold AEC-Q101 certification, maintaining compliance with automotive reliability and quality standards.

  4. Thermal and Environmental Range: Identical operating temperature range (-55°C to 175°C) ensures functional equivalence across all specified operating conditions.

  5. Product Status: The NVMFS4C310NT1G is classified as active, providing long-term availability and supply chain continuity compared to the obsolete NVMFS4841NT1G.

Performance Enhancement: The substitute part demonstrates improved electrical characteristics, including lower on-state resistance (6mOhm versus 7mOhm) and higher continuous drain current (17A versus 16A), providing superior performance margins in the same package footprint.

Compliance: Both parts maintain ROHS3 compliance, REACH unaffected status, and MSL Level 1 moisture sensitivity, ensuring no additional handling or storage requirements.

Frequently Asked Questions (FAQ)

Q: Can the NVMFS4C310NT1G be used as a direct replacement for the NVMFS4841NT1G without circuit modification?

A: Yes. Both devices share identical voltage ratings (30V Vdss), package configuration (5-DFN 5x6), and automotive qualification (AEC-Q101). The substitute part is electrically and mechanically compatible for direct substitution.

Q: What are the key differences between these two parts?

A: The NVMFS4C310NT1G offers improved performance characteristics: lower on-state resistance (6mOhm versus 7mOhm), higher continuous drain current (17A versus 16A), and lower input capacitance (1000pF versus 1436pF). The substitute is also in active production status, whereas the original part is obsolete.

Q: Are there any thermal performance differences?

A: The NVMFS4C310NT1G has lower power dissipation at Ta (3.5W versus 3.7W), indicating improved thermal efficiency. Both parts operate across the same temperature range (-55°C to 175°C).

Q: Does the substitute part require different PCB layout or thermal management?

A: No. The identical 5-DFN (5x6) package ensures the same PCB footprint and thermal interface. Existing thermal management designs are directly applicable.

Q: Are both parts qualified for automotive applications?

A: Yes. Both the NVMFS4841NT1G and NVMFS4C310NT1G hold AEC-Q101 automotive qualification and are suitable for automotive-grade applications.

Q: What is the availability status of each part?

A: The NVMFS4841NT1G is classified as obsolete. The NVMFS4C310NT1G is in active production, ensuring long-term availability and supply chain reliability.

Q: Do these parts have identical moisture sensitivity requirements?

A: Yes. Both parts are classified as MSL Level 1 (Unlimited), requiring no special moisture control or baking procedures during storage and handling.

Q: Can the gate drive voltage remain unchanged when substituting?

A: Yes. Both parts accept identical gate voltage specifications (±20V maximum) and have comparable gate threshold voltages (2.5V and 2.2V respectively), allowing existing gate drive circuits to function without modification.

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