NVF6P02T3G MOSFET P-Channel 20V 10A Equivalent & Substitute Parts

Part Overview

The NVF6P02T3G is a P-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by onsemi, rated for 20V drain-to-source voltage and 10A continuous drain current in a surface mount SOT-223 package. This device is classified as Not For New Designs, indicating it has been superseded in onsemi's product portfolio. For applications requiring active product status with identical electrical and mechanical specifications, equivalent substitute parts are available from the same manufacturer.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	20	V
Current - Continuous Drain (Id) @ 25°C	10	A (Ta)
Rds On (Max) @ Id, Vgs	50	mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id	1	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20	nC @ 4.5V
Vgs (Max)	±8	V
Input Capacitance (Ciss) (Max) @ Vds	1200	pF @ 16V
Power Dissipation (Max)	8.3	W (Ta)
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-261-4, TO-261AA	—
Supplier Device Package	SOT-223 (TO-261)	—
Grade	Automotive	—
Qualification	AEC-Q101	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the NVF6P02T3G is determined by strict equivalence across all critical electrical and mechanical parameters. The substitute part NTF6P02T3G maintains identical specifications for drain-to-source voltage, continuous drain current, on-state resistance, gate threshold voltage, gate charge, maximum gate-source voltage, input capacitance, power dissipation, and operating temperature range. Both devices are packaged in SOT-223 (TO-261) surface mount configuration with identical pin assignments and mechanical dimensions.

The substitution logic is based on the following key parameters:

Drain to Source Voltage (Vdss): 20V
Continuous Drain Current (Id): 10A @ 25°C
On-State Resistance (Rds On): 50mOhm @ 6A, 4.5V
Gate Threshold Voltage (Vgs(th)): 1V @ 250µA
Gate Charge (Qg): 20nC @ 4.5V
Maximum Gate-Source Voltage (Vgs): ±8V
Input Capacitance (Ciss): 1200pF @ 16V
Power Dissipation: 8.3W (Ta)
Operating Temperature Range: -55°C to 150°C
Package Type: SOT-223 (TO-261)
Compliance: ROHS3, AEC-Q101 Automotive Grade

Parameter Comparison

Parameter	NVF6P02T3G (Main Part)	NTF6P02T3G (Substitute)	Match
Manufacturer	onsemi	onsemi	Yes
FET Type	P-Channel	P-Channel	Yes
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	Yes
Drain to Source Voltage (Vdss)	20V	20V	Yes
Current - Continuous Drain (Id) @ 25°C	10A (Ta)	10A (Ta)	Yes
Rds On (Max) @ Id, Vgs	50mOhm @ 6A, 4.5V	50mOhm @ 6A, 4.5V	Yes
Vgs(th) (Max) @ Id	1V @ 250µA	1V @ 250µA	Yes
Gate Charge (Qg) (Max) @ Vgs	20nC @ 4.5V	20nC @ 4.5V	Yes
Vgs (Max)	±8V	±8V	Yes
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 16V	1200pF @ 16V	Yes
Power Dissipation (Max)	8.3W (Ta)	8.3W (Ta)	Yes
Operating Temperature	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)	Yes
Mounting Type	Surface Mount	Surface Mount	Yes
Supplier Device Package	SOT-223 (TO-261)	SOT-223 (TO-261)	Yes
Package / Case	TO-261-4, TO-261AA	TO-261-4, TO-261AA	Yes
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Yes
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	Yes
Product Status	Not For New Designs	Active	Substitute is Active

Engineering Selection Recommendations

The NTF6P02T3G is a direct parametric equivalent to the NVF6P02T3G. Both devices are manufactured by onsemi and share identical electrical characteristics, thermal specifications, and mechanical packaging. The primary distinction is product status: the NVF6P02T3G is designated Not For New Designs, while the NTF6P02T3G maintains Active status.

For new designs and applications requiring long-term component availability, the NTF6P02T3G is the appropriate selection. Both parts carry AEC-Q101 automotive qualification and ROHS3 compliance, ensuring suitability for automotive and industrial applications requiring regulatory adherence. The identical SOT-223 (TO-261) package configuration permits direct board-level substitution without layout modifications.

Frequently Asked Questions (FAQ)

Q: Can the NTF6P02T3G be used as a direct replacement for the NVF6P02T3G in existing designs?

A: Yes. The NTF6P02T3G is a parametric equivalent with identical electrical specifications, thermal ratings, and SOT-223 package configuration. Direct substitution is supported at the board level without circuit modifications.

Q: What is the significance of the product status difference between these parts?

A: The NVF6P02T3G is classified as Not For New Designs, indicating onsemi has transitioned this part number to end-of-life status. The NTF6P02T3G maintains Active status, ensuring continued manufacturing and availability for new applications.

Q: Are the pin configurations identical between NVF6P02T3G and NTF6P02T3G?

A: Yes. Both devices use the SOT-223 (TO-261) package with identical pin assignments and mechanical dimensions, enabling direct PCB substitution.

Q: Do both parts meet automotive qualification requirements?

A: Yes. Both the NVF6P02T3G and NTF6P02T3G carry AEC-Q101 automotive qualification and are rated for automotive-grade applications across the -55°C to 150°C operating temperature range.

Q: Is there any difference in RoHS or environmental compliance between these parts?

A: No. Both parts are ROHS3 compliant, REACH unaffected, and carry MSL 1 (Unlimited) moisture sensitivity rating, ensuring identical environmental and regulatory compliance.

Q: What are the critical electrical parameters that define substitution eligibility?

A: Substitution is determined by matching drain-to-source voltage (20V), continuous drain current (10A), on-state resistance (50mOhm @ 6A, 4.5V), gate threshold voltage (1V @ 250µA), gate charge (20nC @ 4.5V), and operating temperature range (-55°C to 150°C). All parameters are identical between the two parts.

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