NTUD3127CT5G MOSFET N/P-Channel Equivalent & Substitute Parts

Part Overview

The NTUD3127CT5G is a dual N-channel and P-channel MOSFET array manufactured by onsemi, housed in a SOT-963 surface mount package. This component integrates logic-level gate MOSFETs with a maximum drain-source voltage rating of 20V and continuous drain current capabilities of 160mA (N-channel) and 140mA (P-channel). The device is rated for 125mW maximum power dissipation and operates across a temperature range of -55°C to 150°C.

The NTUD3127CT5G is classified as an obsolete product. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	20	V
Continuous Drain Current (Id) @ 25°C - N-Channel	160	mA
Continuous Drain Current (Id) @ 25°C - P-Channel	140	mA
Rds On (Max) @ 100mA, 4.5V	3	Ohm
Vgs(th) (Max) @ 250µA	1	V
Input Capacitance (Ciss) @ 15V	9	pF
Power - Max	125	mW
Operating Temperature Range	-55 to 150	°C
Package / Case	SOT-963	-
Configuration	N and P-Channel	-
FET Feature	Logic Level Gate	-

Substitute Part Grouping Explanation

Substitution of the NTUD3127CT5G is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain to Source Voltage (Vdss): 20V
Configuration: N and P-Channel dual MOSFET array
Package / Case: SOT-963 surface mount
FET Feature: Logic Level Gate
Operating Temperature Range: Minimum -55°C to 150°C
Power Rating: 125mW maximum

Current Capability Criteria: Substitute parts must maintain continuous drain current ratings equal to or greater than the original specification (160mA N-channel, 140mA P-channel) to ensure functional equivalence in existing circuit designs.

On-Resistance (Rds On) Criteria: Substitute parts with lower Rds On values (improved performance) are acceptable. Substitute parts with higher Rds On values are not acceptable as they would increase power dissipation and heat generation beyond design specifications.

Capacitance Criteria: Input capacitance (Ciss) values must not exceed the original specification to prevent circuit timing degradation or switching performance issues.

The identified substitute parts meet these criteria through direct electrical equivalence or performance enhancement while maintaining package compatibility and thermal operating range.

Parameter Comparison

Parameter	NTUD3127CT5G	NTUD3169CZT5G	CMRDM3575 TR PBFREE
Manufacturer	onsemi	onsemi	Central Semiconductor Corp
Product Status	Obsolete	Active	Active
Drain to Source Voltage (Vdss)	20V	20V	20V
Continuous Drain Current (Id) - N-Channel @ 25°C	160mA	220mA	160mA
Continuous Drain Current (Id) - P-Channel @ 25°C	140mA	200mA	140mA
Rds On (Max) @ 100mA, 4.5V	3Ohm	1.5Ohm	3Ohm
Vgs(th) (Max) @ 250µA	1V	1V	1V
Input Capacitance (Ciss) @ 15V	9pF	12.5pF	9pF
Power - Max	125mW	125mW	125mW
Operating Temperature Range	-55°C to 150°C	-55°C to 150°C	-65°C to 150°C
Package / Case	SOT-963	SOT-963	SOT-963
Configuration	N and P-Channel	N and P-Channel	N and P-Channel
FET Feature	Logic Level Gate	Logic Level Gate	Logic Level Gate
Mounting Type	Surface Mount	Surface Mount	Surface Mount

Engineering Selection Recommendations

NTUD3169CZT5G (onsemi)

The NTUD3169CZT5G is an active product from onsemi with enhanced electrical performance characteristics. This substitute provides increased continuous drain current ratings (220mA N-channel, 200mA P-channel) and reduced on-resistance (1.5Ohm at 100mA, 4.5V), representing a performance upgrade over the obsolete NTUD3127CT5G. The component maintains identical voltage ratings, package form factor, and operating temperature range. The NTUD3169CZT5G is RoHS3 compliant and carries REACH Unaffected status. This part is recommended for new designs and production transitions where enhanced current handling and reduced power dissipation are beneficial.

CMRDM3575 TR PBFREE (Central Semiconductor Corp)

The CMRDM3575 TR PBFREE provides direct electrical equivalence to the NTUD3127CT5G with identical continuous drain current ratings (160mA N-channel, 140mA P-channel) and on-resistance specifications (3Ohm at 100mA, 4.5V). This substitute maintains the same SOT-963 package configuration and logic-level gate feature. The CMRDM3575 TR PBFREE is an active product with RoHS3 compliance and REACH Unaffected status. The operating temperature range extends to -65°C minimum, providing enhanced low-temperature performance. This part is recommended for direct replacement applications requiring electrical and thermal equivalence to the original NTUD3127CT5G.

Frequently Asked Questions (FAQ)

Q: Can the NTUD3169CZT5G be used as a direct replacement for the NTUD3127CT5G?

A: The NTUD3169CZT5G is electrically compatible with the NTUD3127CT5G in terms of voltage rating, package, and gate threshold characteristics. However, the NTUD3169CZT5G provides enhanced performance with higher current ratings (220mA vs. 160mA N-channel; 200mA vs. 140mA P-channel) and lower on-resistance (1.5Ohm vs. 3Ohm). These improvements are backward compatible and do not create circuit incompatibility. The input capacitance is slightly higher (12.5pF vs. 9pF), which may affect high-frequency switching characteristics in timing-critical applications.

Q: What is the difference between the CMRDM3575 TR PBFREE and the NTUD3127CT5G?

A: The CMRDM3575 TR PBFREE provides electrical equivalence to the NTUD3127CT5G with identical current ratings, on-resistance, and input capacitance specifications. The primary differences are manufacturer (Central Semiconductor Corp vs. onsemi), product status (active vs. obsolete), and extended low-temperature operating range (-65°C vs. -55°C minimum). Both components are housed in SOT-963 packages and feature logic-level gate MOSFETs with 20V drain-source voltage ratings.

Q: Are there packaging differences between these substitute parts?

A: The NTUD3127CT5G is supplied in standard surface mount packaging. The NTUD3169CZT5G is available in Cut Tape (CT) and Digi-Reel® packaging options. The CMRDM3575 TR PBFREE is supplied in Tape & Reel (TR) format. All three components use the SOT-963 package case. Packaging format selection depends on production volume and assembly equipment compatibility.

Q: Which substitute part should be selected for applications requiring the lowest power dissipation?

A: The NTUD3169CZT5G is recommended for applications prioritizing minimal power dissipation. With an on-resistance of 1.5Ohm at 100mA and 4.5V (compared to 3Ohm for the original part), the NTUD3169CZT5G reduces resistive losses by 50%, resulting in lower heat generation and improved thermal performance in the same 125mW power envelope.

Q: Are all substitute parts RoHS compliant?

A: The NTUD3169CZT5G is RoHS3 compliant. The CMRDM3575 TR PBFREE is RoHS3 compliant and explicitly marked as PBFREE (lead-free). The original NTUD3127CT5G does not specify RoHS status in the provided data. Both active substitute parts meet current environmental compliance requirements.

Q: What is the impact of the input capacitance difference in the NTUD3169CZT5G?

A: The NTUD3169CZT5G has an input capacitance (Ciss) of 12.5pF at 15V, compared to 9pF for the NTUD3127CT5G. This 3.5pF increase may affect gate drive circuit performance in high-frequency switching applications. Applications operating at frequencies below 1MHz typically experience negligible impact. High-frequency designs (above 10MHz) should verify gate drive current capability and switching time performance through detailed circuit simulation or prototype testing.

Q: Can the CMRDM3575 TR PBFREE be used in applications with extended low-temperature requirements?

A: The CMRDM3575 TR PBFREE operates to -65°C minimum junction temperature, compared to -55°C for the NTUD3127CT5G. This extended low-temperature rating provides additional margin for applications exposed to extreme cold environments or cryogenic conditions. The upper temperature limit remains 150°C for all three parts.

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