NTTS2P02R2G P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The NTTS2P02R2G is a P-Channel MOSFET manufactured by onsemi, rated for 20V drain-to-source voltage with 2.4A continuous drain current at 25°C. The device is housed in an 8-MSOP surface mount package and is designed for low-power switching applications requiring compact form factors.

This part is classified as obsolete. Identifying equivalent and substitute components is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this device.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	20	V
Continuous Drain Current (Id) @ 25°C	2.4	A
On-Resistance (Rds On Max) @ Id, Vgs	90 mOhm @ 2.4A, 4.5V	—
Gate Threshold Voltage (Vgs(th) Max) @ Id	1.4	V @ 250µA
Power Dissipation (Max)	780	mW
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	8-MSOP	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitute parts for the NTTS2P02R2G are identified based on the following critical parameters that determine functional compatibility:

Matching Parameters (Required for Substitution):

FET Type: P-Channel
Drain to Source Voltage (Vdss): 20V minimum
Package Type: 8-MSOP surface mount
On-Resistance (Rds On): 90 mOhm or lower at specified conditions
Operating Temperature Range: -55°C to 150°C or greater

Allowable Variations:

Continuous Drain Current (Id): Equal to or greater than 2.4A
Power Dissipation: Equal to or greater than 780mW
Gate Threshold Voltage: Within acceptable switching characteristics
Gate Charge and Input Capacitance: May vary within application tolerance

The ZXM64P02XTA from Diodes Incorporated meets all matching parameters and exceeds performance specifications in drain current and power dissipation ratings, making it a direct functional substitute.

Parameter Comparison

Parameter	NTTS2P02R2G (onsemi)	ZXM64P02XTA (Diodes Inc.)	Unit
FET Type	P-Channel	P-Channel	—
Drain to Source Voltage (Vdss)	20	20	V
Continuous Drain Current (Id) @ 25°C	2.4	3.5	A
Rds On (Max) @ Id, Vgs	90 mOhm @ 2.4A, 4.5V	90 mOhm @ 2.4A, 4.5V	—
Gate Threshold Voltage (Vgs(th) Max) @ Id	1.4 @ 250µA	0.7 @ 250µA (Min)	V
Gate Charge (Qg Max) @ Vgs	18 @ 4.5V	6.9 @ 4.5V	nC
Input Capacitance (Ciss Max) @ Vds	550 @ 16V	900 @ 15V	pF
Power Dissipation (Max)	780	1.1	W
Operating Temperature Range	-55 to 150	-55 to 150	°C (TJ)
Package Type	8-MSOP	8-MSOP	—
Mounting Type	Surface Mount	Surface Mount	—
Vgs (Max)	±8	±12	V

Engineering Selection Recommendations

NTTS2P02R2G (onsemi):

Product Status: Obsolete
Compliance: REACH Unaffected; ECCN EAR99
Moisture Sensitivity Level: 1 (Unlimited)
Current Inventory: 3,850 pieces available

ZXM64P02XTA (Diodes Incorporated):

Product Status: Active
Compliance: ROHS3 Compliant; REACH Unaffected; ECCN EAR99
Moisture Sensitivity Level: 1 (Unlimited)
Current Inventory: 7,195 pieces available
Packaging: Tape & Reel (TR)

The ZXM64P02XTA is the recommended substitute for new designs and ongoing production. As an active product with higher current rating (3.5A vs. 2.4A), superior power dissipation capability (1.1W vs. 780mW), and ROHS3 compliance, it provides enhanced performance margins and long-term supply security. The identical on-resistance specification at rated conditions ensures drop-in compatibility for existing circuit designs. The 8-MSOP package footprint is identical, requiring no PCB layout modifications.

Frequently Asked Questions (FAQ)

Q: Can the ZXM64P02XTA directly replace the NTTS2P02R2G without circuit modifications?

A: Yes. Both devices share identical drain-to-source voltage (20V), on-resistance (90 mOhm @ 2.4A, 4.5V), and 8-MSOP package geometry. The ZXM64P02XTA's higher current rating (3.5A vs. 2.4A) and power dissipation (1.1W vs. 780mW) provide additional performance margin without requiring design changes.

Q: What are the key differences between these two parts?

A: The ZXM64P02XTA offers higher continuous drain current (3.5A vs. 2.4A), greater power dissipation capability (1.1W vs. 780mW), lower gate charge (6.9 nC vs. 18 nC), higher gate voltage rating (±12V vs. ±8V), and active product status with ROHS3 compliance. The NTTS2P02R2G has lower gate threshold voltage (1.4V vs. 0.7V minimum).

Q: Are the package dimensions identical?

A: Yes. Both parts use the 8-MSOP package with 0.118" width and 3.00mm body width. PCB footprints are identical, and no layout modifications are required for substitution.

Q: What is the significance of the gate charge difference?

A: The ZXM64P02XTA has lower gate charge (6.9 nC vs. 18 nC), resulting in faster switching transitions and reduced gate drive power requirements. This is a performance advantage in high-frequency switching applications.

Q: Does the higher input capacitance of the ZXM64P02XTA affect circuit performance?

A: Input capacitance (Ciss) is higher in the ZXM64P02XTA (900 pF @ 15V vs. 550 pF @ 16V). This may require slightly higher gate drive current for equivalent switching speed but does not prevent substitution. Circuit simulation or testing may be warranted for timing-critical applications.

Q: What is the compliance status of each part?

A: The NTTS2P02R2G is REACH Unaffected with EAR99 classification. The ZXM64P02XTA is ROHS3 Compliant, REACH Unaffected, and EAR99 classified, making it suitable for applications with stricter environmental compliance requirements.

Q: Why is the NTTS2P02R2G classified as obsolete?

A: Obsolescence indicates the manufacturer has discontinued production. The ZXM64P02XTA, as an active product with superior specifications and higher inventory availability (7,195 vs. 3,850 pieces), is the recommended path for design continuity and supply chain stability.

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