NTPF360N80S3Z Equivalent & Substitute Parts

Part Overview

The NTPF360N80S3Z is an N-Channel MOSFET manufactured by onsemi, rated for 800V drain-to-source voltage with 13A continuous drain current at 25°C. This device is packaged in a TO-220FP through-hole configuration and is part of the SuperFET® III series. The part carries a "Not For New Designs" product status, indicating that onsemi has discontinued active development and support for this component. Identifying equivalent substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and access components with active manufacturer support and current production status.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	13	A
On-State Resistance (Rds On Max) @ Id, Vgs	360 mOhm @ 6.5A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	3.8	V @ 300µA
Gate Charge (Qg Max) @ Vgs	25.3	nC @ 10V
Power Dissipation (Max)	31	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-220-3 Full Pack	Through Hole
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitute parts for the NTPF360N80S3Z are identified based on strict electrical and mechanical compatibility criteria. The primary substitution logic is based on the following parameters:

Critical Matching Parameters:

Drain to Source Voltage (Vdss): 800V minimum
Package Type: TO-220-3 through-hole configuration
FET Type: N-Channel MOSFET
Technology: Metal Oxide Semiconductor
Operating Temperature Range: -55°C to 150°C minimum
RoHS Compliance: ROHS3 Compliant

Performance Consideration Parameters:

Continuous Drain Current (Id): Equal to or greater than 13A
On-State Resistance (Rds On): Lower or equal values indicate improved performance
Gate Charge (Qg): Lower values indicate reduced switching losses
Power Dissipation: Equal to or greater than 31W capacity

The SPA17N80C3XKSA1 from Infineon Technologies meets all critical matching parameters and exceeds performance specifications in drain current, on-state resistance, and power dissipation capacity. This part is classified as Active product status, ensuring ongoing manufacturer support and supply availability.

Parameter Comparison

Parameter	NTPF360N80S3Z (onsemi)	SPA17N80C3XKSA1 (Infineon)	Unit
Drain to Source Voltage (Vdss)	800	800	V
Continuous Drain Current (Id) @ 25°C	13	17	A
Drive Voltage (Max Rds On)	10	10	V
Rds On (Max) @ Id, Vgs	360 mOhm @ 6.5A, 10V	290 mOhm @ 11A, 10V	mOhm
Vgs(th) (Max) @ Id	3.8 @ 300µA	3.9 @ 1mA	V
Gate Charge (Qg Max) @ Vgs	25.3 @ 10V	177 @ 10V	nC
Vgs (Max)	±20	±20	V
Power Dissipation (Max)	31	42	W
Operating Temperature Range	-55 to 150	-55 to 150	°C
Package Type	TO-220-3 Full Pack	TO-220-3 Full Pack
RoHS Status	ROHS3 Compliant	ROHS3 Compliant
Product Status	Not For New Designs	Active

Engineering Selection Recommendations

Primary Substitute: SPA17N80C3XKSA1

The SPA17N80C3XKSA1 from Infineon Technologies is the qualified substitute for the NTPF360N80S3Z. This selection is based on the following engineering criteria:

Compliance and Support Status: The SPA17N80C3XKSA1 carries Active product status, ensuring ongoing manufacturer support, production continuity, and access to current technical documentation. The NTPF360N80S3Z is designated "Not For New Designs," making the transition to an actively supported component necessary for long-term design reliability.

Regulatory Compliance: Both components are ROHS3 Compliant and REACH Unaffected, meeting current environmental and regulatory requirements. Both components carry EAR99 ECCN classification and identical HTSUS codes (8541.29.0095).

Electrical Compatibility: The SPA17N80C3XKSA1 maintains identical voltage ratings (800V Vdss, ±20V Vgs Max) and operating temperature range (-55°C to 150°C). The substitute part exceeds the original specification in continuous drain current (17A versus 13A) and power dissipation capacity (42W versus 31W), providing design margin and thermal headroom.

Package Compatibility: Both components utilize TO-220-3 through-hole packaging, enabling direct mechanical and electrical substitution without PCB redesign or layout modifications.

Performance Characteristics: The SPA17N80C3XKSA1 demonstrates improved on-state resistance (290 mOhm at 11A versus 360 mOhm at 6.5A), resulting in lower conduction losses and reduced thermal generation. The higher gate charge (177 nC versus 25.3 nC) reflects the increased current capability and does not present a substitution barrier for standard gate drive circuits.

Frequently Asked Questions (FAQ)

Q: Can the SPA17N80C3XKSA1 be used as a direct replacement for the NTPF360N80S3Z without PCB modifications?

A: Yes. Both components share identical TO-220-3 through-hole package geometry and pinout configuration. No PCB layout changes are required for mechanical or electrical substitution.

Q: What are the key differences between these two MOSFETs?

A: The primary differences are manufacturer (onsemi versus Infineon), product status (Not For New Designs versus Active), and performance specifications. The SPA17N80C3XKSA1 provides higher continuous drain current (17A versus 13A), lower on-state resistance (290 mOhm versus 360 mOhm), and greater power dissipation capacity (42W versus 31W). Gate charge is higher (177 nC versus 25.3 nC) due to the increased current rating.

Q: Are there any gate drive circuit modifications required when switching from NTPF360N80S3Z to SPA17N80C3XKSA1?

A: No modifications are required. Both components have identical maximum gate-source voltage ratings (±20V) and similar gate threshold voltages (3.8V versus 3.9V). Existing gate drive circuits designed for the NTPF360N80S3Z are compatible with the SPA17N80C3XKSA1.

Q: Why is the gate charge specification significantly higher for the SPA17N80C3XKSA1?

A: The higher gate charge (177 nC versus 25.3 nC) is a direct result of the increased current capability (17A versus 13A). Higher current-rated MOSFETs typically exhibit higher input capacitance and gate charge due to larger die size and increased channel width. This does not affect substitution compatibility with standard gate drive circuits.

Q: What is the inventory status for these components?

A: The NTPF360N80S3Z has 1851 pieces in stock. The SPA17N80C3XKSA1 has 1491 pieces in stock. Both components are available as new original stock.

Q: Are both components RoHS compliant?

A: Yes. Both the NTPF360N80S3Z and SPA17N80C3XKSA1 are ROHS3 Compliant and REACH Unaffected, meeting current environmental and regulatory standards.

Q: What is the significance of the "Not For New Designs" status on the NTPF360N80S3Z?

A: This designation indicates that onsemi has discontinued active development and support for this component. While existing stock remains available, new designs should utilize actively supported alternatives such as the SPA17N80C3XKSA1 to ensure long-term supply chain reliability and access to current technical support.

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