NTPF360N65S3H Equivalent & Substitute Parts

Part Overview

The NTPF360N65S3H is an N-Channel 650 V power MOSFET manufactured by onsemi, designed for through-hole applications in the TO-220FP package. This device operates within the SuperFET® III series and delivers 10A continuous drain current with a maximum power dissipation of 26W at the case temperature. The part is classified as Not For New Designs, indicating that alternative solutions should be evaluated for new circuit implementations. Identifying equivalent and substitute parts is necessary to ensure design flexibility, maintain supply chain continuity, and support legacy system maintenance.

Substiute Parts

NTPF360N65S3H

onsemiIn Stock: 883NTPF360N65S3H Datasheet

Current PartRFQ

SIHA11N80E-GE3

Vishay SiliconixIn Stock: 2261SIHA11N80E-GE3 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the NTPF360N65S3H is determined by electrical and mechanical compatibility within the N-Channel MOSFET category. The critical parameters governing substitution are:

Electrical Compatibility Criteria:

• Drain to Source Voltage (Vdss) must equal or exceed 650 V
• Continuous Drain Current (Id) must equal or exceed 10 A
• Gate Threshold Voltage (Vgs(th)) must be compatible with 4 V maximum specification
• Maximum Gate Voltage (Vgs Max) must accommodate ±30 V operation
• Operating temperature range must span -55°C to 150°C

Mechanical Compatibility Criteria:

• Mounting type must be Through Hole
• Package must be TO-220-3 Full Pack configuration

The SIHA11N80E-GE3 from Vishay Siliconix satisfies these substitution criteria. This device provides higher voltage rating (800 V versus 650 V), increased current capacity (12 A versus 10 A), and greater power dissipation capability (34 W versus 26 W), while maintaining identical gate voltage specifications, compatible gate charge characteristics, and the same through-hole TO-220-3 package format.

Parameter Comparison

Engineering Selection Recommendations

NTPF360N65S3H (onsemi): The NTPF360N65S3H carries a Not For New Designs status, indicating that onsemi has transitioned this part to end-of-life or legacy support. This device remains suitable for maintenance, repair, and support of existing systems where the part is already integrated. The device is ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory standards.

SIHA11N80E-GE3 (Vishay Siliconix): The SIHA11N80E-GE3 is classified as Active product status, indicating full manufacturing support and availability for new designs. This substitute provides enhanced electrical performance with higher voltage rating (800 V), increased current capacity (12 A), and greater power dissipation (34 W). The device maintains identical gate voltage specifications and compatible thermal operating range. Both parts are ROHS3 compliant and REACH unaffected. The SIHA11N80E-GE3 is suitable for direct substitution in applications where the NTPF360N65S3H is currently deployed, with the understanding that the substitute's superior ratings provide additional design margin.

Frequently Asked Questions (FAQ)

Q: Can the SIHA11N80E-GE3 directly replace the NTPF360N65S3H in existing circuits?

A: Yes. The SIHA11N80E-GE3 is electrically and mechanically compatible with the NTPF360N65S3H. Both devices are N-Channel MOSFETs in TO-220-3 Full Pack configuration with identical gate voltage specifications (±30 V maximum, 4 V threshold). The substitute provides higher voltage rating (800 V versus 650 V), increased current capacity (12 A versus 10 A), and greater power dissipation capability (34 W versus 26 W). These enhanced ratings ensure compatibility with existing circuit designs.

Q: What are the key differences between these two parts?

A: The primary differences are voltage rating, current capacity, and power dissipation. The SIHA11N80E-GE3 offers 800 V Vdss compared to 650 V for the NTPF360N65S3H, supports 12 A continuous drain current versus 10 A, and dissipates 34 W maximum versus 26 W. Gate charge is higher in the substitute (88 nC versus 17.5 nC), and input capacitance is higher (1670 pF versus 916 pF). On-state resistance is slightly higher (440 mOhm versus 360 mOhm), though measured at different current levels.

Q: Are there any package or mounting differences?

A: No. Both devices use identical through-hole TO-220-3 Full Pack configuration. Pin assignments and mechanical dimensions are compatible, allowing direct board-level substitution without layout modifications.

Q: What is the product status significance?

A: The NTPF360N65S3H is marked Not For New Designs, meaning onsemi no longer recommends this part for new circuit development. The SIHA11N80E-GE3 is Active status, indicating full manufacturing support and recommended for new designs. For legacy system support, the NTPF360N65S3H remains available; for new implementations, the SIHA11N80E-GE3 is the appropriate selection.

Q: Are both parts compliant with current environmental regulations?

A: Yes. Both the NTPF360N65S3H and SIHA11N80E-GE3 are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements for electronic components.

Q: How does gate charge affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The SIHA11N80E-GE3 has higher gate charge (88 nC versus 17.5 nC), requiring more gate drive energy. This may increase switching losses in high-frequency applications but does not prevent substitution in standard switching circuits where gate drive capability is adequate.

Q: What is the significance of input capacitance differences?

A: Input capacitance (Ciss) affects gate drive requirements and switching speed. The SIHA11N80E-GE3 exhibits higher input capacitance (1670 pF versus 916 pF), which may slightly increase switching transition times. This difference is not prohibitive for most applications but should be considered in high-frequency switching circuits where gate drive performance is critical.