NTP60N06LG N-Channel 60V 60A MOSFET Equivalent & Substitute Parts

Part Overview

The NTP60N06LG is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage and 60A continuous drain current in a TO-220 through-hole package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing production and maintenance applications. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance while accommodating the through-hole TO-220 package form factor.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	60	A
On-Resistance (Rds On) @ 30A, 5V	16	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2	V
Gate Charge (Qg) @ 5V	65	nC
Input Capacitance (Ciss) @ 25V	3075	pF
Power Dissipation (Max)	2.4 (Ta), 150 (Tj)	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution eligibility for the NTP60N06LG is determined by the following critical parameters:

Mandatory Compatibility Criteria:

Drain-to-Source Voltage (Vdss): 60V minimum
Continuous Drain Current (Id): 60A or greater at 25°C
Package Type: TO-220 or TO-220-3 through-hole configuration
FET Technology: N-Channel MOSFET (Metal Oxide)
Operating Temperature Range: -55°C to 175°C minimum

Performance Parameters:

On-Resistance (Rds On): 16 mOhm or lower at specified gate voltage and current
Gate Threshold Voltage (Vgs(th)): 2V to 4V range
Gate Charge (Qg): Comparable to 65 nC baseline
Input Capacitance (Ciss): Within acceptable switching performance range

Substitute parts are grouped into three categories based on current rating alignment: parts rated at 50A (lower current), parts rated at 55A (near-equivalent), and parts rated above 60A (higher current capability). All candidates maintain the 60V voltage rating and TO-220 package specification.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Power Diss. (W)	Temp Range (°C)	Status
NTP60N06LG	onsemi	60	60	16 @ 30A, 5V	2 @ 250µA	65 @ 5V	3075 @ 25V	2.4 (Ta), 150 (Tj)	-55 to 175	Obsolete
STP60NF06	STMicroelectronics	60	60	16 @ 30A, 10V	4 @ 250µA	73 @ 10V	1660 @ 25V	110 (Tc)	-55 to 175	Active
STP55NF06L	STMicroelectronics	60	55	18 @ 27.5A, 10V	1.7 @ 250µA	37 @ 4.5V	1700 @ 25V	95 (Tc)	-55 to 175	Active
STP55NF06	STMicroelectronics	60	50	18 @ 27.5A, 10V	4 @ 250µA	60 @ 10V	1300 @ 25V	110 (Tc)	-55 to 175	Active
RFP50N06	Harris Corporation	60	50	22 @ 50A, 10V	4 @ 250µA	150 @ 20V	2020 @ 25V	131 (Tc)	-55 to 175	Obsolete
IRFZ44VPBF	Infineon Technologies	60	55	16.5 @ 31A, 10V	4 @ 250µA	67 @ 10V	1812 @ 25V	115 (Tc)	-55 to 175	Not For New Designs
IRFB3806PBF	Infineon Technologies	60	43	15.8 @ 25A, 10V	4 @ 50µA	30 @ 10V	1150 @ 50V	71 (Tc)	-55 to 175	Active
IRF1010EPBF	Infineon Technologies	60	84	12 @ 50A, 10V	4 @ 250µA	130 @ 10V	3210 @ 25V	200 (Tc)	-55 to 175	Not For New Designs
DMT6009LCT	Diodes Incorporated	60	37.2	12 @ 13.5A, 10V	2 @ 250µA	33.5 @ 10V	1925 @ 30V	2.2 (Ta), 25 (Tc)	-55 to 150	Active
PSMN4R6-60PS,127	Nexperia USA Inc.	60	100	4.6 @ 25A, 10V	4 @ 1mA	70.8 @ 10V	4426 @ 30V	211 (Tc)	-55 to 175	Obsolete
PSMN3R0-60PS,127	Nexperia USA Inc.	60	100	3 @ 25A, 10V	4 @ 1mA	130 @ 10V	8079 @ 30V	306 (Tc)	-55 to 175	Obsolete

Engineering Selection Recommendations

Primary Equivalent (Direct Replacement):

STP60NF06 (STMicroelectronics) is the primary equivalent for the NTP60N06LG. This part maintains identical voltage and current ratings (60V, 60A), equivalent on-resistance (16 mOhm), and matching operating temperature range (-55°C to 175°C). The STP60NF06 is classified as Active product status with RoHS3 compliance, making it suitable for new designs and ongoing production. The part is available in high inventory (35,300 units) and uses the same TO-220-3 package configuration.

Secondary Equivalents (Near-Equivalent Current Rating):

STP55NF06L (STMicroelectronics) and IRFZ44VPBF (Infineon Technologies) provide near-equivalent performance with 55A continuous drain current, slightly below the 60A specification. Both maintain 60V voltage rating, comparable on-resistance characteristics, and full operating temperature range. STP55NF06L is Active status with RoHS3 compliance. IRFZ44VPBF is classified as Not For New Designs but remains available (20,534 units in stock).

Higher Current Capability Alternative:

IRF1010EPBF (Infineon Technologies) offers 84A continuous drain current with superior on-resistance (12 mOhm @ 50A, 10V) and higher power dissipation capability (200W Tc). This part is suitable for applications requiring enhanced current headroom. However, it is classified as Not For New Designs. The part maintains 60V rating and full temperature range compatibility.

Lower Current Alternatives (Current-Limited Applications):

STP55NF06 (50A) and RFP50N06 (50A) are suitable for applications where 60A current is not required. Both maintain 60V voltage rating and TO-220 package compatibility. STP55NF06 is Active status with RoHS3 compliance and high inventory availability (155,400 units).

Compliance and Regulatory Status:

Parts with Active product status and RoHS3 compliance are preferred for new designs: STP60NF06, STP55NF06L, STP55NF06, IRFB3806PBF, and DMT6009LCT. Parts classified as Obsolete or Not For New Designs should be used only for legacy system maintenance or where design constraints require specific electrical characteristics.

Frequently Asked Questions (FAQ)

Q: Can STP60NF06 directly replace NTP60N06LG without circuit modification?

A: Yes. STP60NF06 maintains identical voltage (60V) and current (60A) ratings, equivalent on-resistance (16 mOhm), and matching operating temperature range (-55°C to 175°C). Both use TO-220-3 package configuration. The primary difference is gate drive voltage specification (10V vs. 5V), which does not prevent direct substitution in standard applications. Verify gate drive circuit compatibility with your specific application.

Q: What is the difference between STP55NF06 and STP55NF06L?

A: Both parts are rated for 55A continuous drain current at 60V. STP55NF06L features lower gate threshold voltage (1.7V vs. 4V) and reduced gate charge (37 nC @ 4.5V vs. 60 nC @ 10V), resulting in faster switching characteristics. STP55NF06L is preferred for high-frequency switching applications. Both are Active status with RoHS3 compliance.

Q: Why is PSMN4R6-60PS,127 listed as a substitute despite 100A rating?

A: PSMN4R6-60PS,127 maintains the 60V voltage rating and TO-220 package configuration required for mechanical compatibility. The 100A current rating exceeds the 60A requirement, providing design margin. However, this part is classified as Obsolete. It is included for reference in legacy system maintenance scenarios where higher current capability may be beneficial.

Q: Is DMT6009LCT suitable for applications requiring full 60A current?

A: No. DMT6009LCT is rated for 37.2A continuous drain current, which is below the 60A specification of NTP60N06LG. This part is suitable only for applications with reduced current requirements. Additionally, the maximum operating temperature is 150°C, compared to 175°C for the main part. Use DMT6009LCT only when current and temperature requirements are confirmed to be within its specifications.

Q: What package considerations apply to all substitute parts?

A: All substitute parts listed use TO-220 or TO-220-3 through-hole package configuration, maintaining mechanical compatibility with NTP60N06LG. Pin configuration (Gate, Drain, Source) is standard across all N-Channel MOSFETs in this package type. Verify PCB layout and thermal management provisions accommodate the specific part's power dissipation characteristics.

Q: Are there RoHS compliance differences between substitute parts?

A: Yes. STP60NF06, STP55NF06L, STP55NF06, IRFB3806PBF, IRF1010EPBF, DMT6009LCT, PSMN4R6-60PS,127, and PSMN3R0-60PS,127 are RoHS3 compliant. RFP50N06 is RoHS non-compliant. For applications subject to RoHS requirements, select only RoHS3-compliant alternatives.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. NTP60N06LG specifies 65 nC @ 5V. Substitute parts range from 30 nC (IRFB3806PBF) to 150 nC (RFP50N06). Lower gate charge enables faster switching and reduced gate drive power dissipation. Higher gate charge requires stronger gate drive circuits. Verify gate drive circuit capability matches the selected substitute part's gate charge specification.

Q: What thermal considerations apply when selecting a substitute?

A: Power dissipation varies significantly among substitutes. NTP60N06LG specifies 2.4W (Ta) and 150W (Tj). STP60NF06 specifies 110W (Tc), while PSMN3R0-60PS,127 specifies 306W (Tc). Higher power dissipation requires enhanced thermal management (heatsinking, airflow). Verify thermal design accommodates the selected part's power dissipation under worst-case operating conditions.

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