NTP52N10 N-Channel MOSFET 100V 60A Equivalent & Substitute Parts

Part Overview

The NTP52N10 is an N-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with 60A continuous drain current in a Through Hole TO-220 package. This device is classified as Obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity. The part operates across a temperature range of -55°C to 175°C and dissipates up to 214W at the case temperature. Due to its obsolete status and RoHS non-compliant classification, alternative components with active product status or improved compliance certifications are necessary for new designs and long-term availability assurance.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	60	A
On-State Resistance (Rds On) @ 26A, 10V	30	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	135	nC
Input Capacitance (Ciss) @ 25V	3150	pF
Power Dissipation (Max) @ Tc	214	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3	Through Hole
FET Technology	MOSFET (Metal Oxide)	N-Channel

Substitute Part Grouping Explanation

Substitution of the NTP52N10 is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal 100V
Package Type: Must be TO-220-3 Through Hole configuration
FET Technology: Must be N-Channel MOSFET (Metal Oxide)
Gate Threshold Voltage (Vgs(th)): Must equal 4V @ specified test current
Maximum Gate Voltage (Vgs Max): Must equal ±20V
Operating Temperature Range: Must support -55°C to 175°C

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Substitute parts must meet or exceed 60A
On-State Resistance (Rds On): Lower values indicate improved performance
Power Dissipation: Must support thermal requirements of the application
Gate Charge (Qg): Affects switching speed and drive circuit requirements
Input Capacitance (Ciss): Influences gate drive characteristics

All substitute parts listed maintain identical voltage ratings, package configuration, and temperature operating range. Drain current ratings vary to accommodate different application requirements while maintaining electrical compatibility.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Power Dissipation (W)	Product Status	RoHS Status
NTP52N10	onsemi	100	60	30	4	135	3150	214	Obsolete	Non-compliant
PHP18NQ10T,127	Nexperia USA Inc.	100	18	90	4	21	633	79	Obsolete	ROHS3 Compliant
PSMN009-100P,127	NXP Semiconductors	100	75	8.8	4	156	8250	230	Active	Not Specified
PSMN013-100PS,127	Nexperia USA Inc.	100	68	13.9	4	59	3195	170	Obsolete	ROHS3 Compliant
PSMN015-100P,127	Nexperia USA Inc.	100	75	15	4	90	4900	300	Obsolete	ROHS3 Compliant
PSMN016-100PS,127	Nexperia USA Inc.	100	57	16	4	49	2404	148	Obsolete	ROHS3 Compliant
PSMN027-100PS,127	Nexperia USA Inc.	100	37	26.8	4	30	1624	103	Obsolete	ROHS3 Compliant
PSMN5R6-100PS,127	Nexperia USA Inc.	100	100	5.6	4	141	8061	306	Obsolete	ROHS3 Compliant
PSMN7R0-100PS,127	Nexperia USA Inc.	100	100	12	4	125	6686	269	Obsolete	ROHS3 Compliant
PSMN9R5-100PS,127	NXP Semiconductors	100	89	Not Specified	Not Specified	Not Specified	Not Specified	Not Specified	Active	Not Applicable
STP40NF10	STMicroelectronics	100	50	28	4	62	2180	150	Active	ROHS3 Compliant

Engineering Selection Recommendations

For Active Product Status Priority:

PSMN009-100P,127 (NXP Semiconductors) and PSMN9R5-100PS,127 (NXP Semiconductors) maintain Active product status, ensuring long-term availability and manufacturing support. PSMN009-100P,127 provides 75A continuous drain current with superior on-state resistance of 8.8mOhm, exceeding the NTP52N10 performance envelope. STP40NF10 (STMicroelectronics) offers Active status with ROHS3 compliance and 50A continuous drain current, suitable for applications where the full 60A rating is not required.

For RoHS Compliance Priority:

Multiple Nexperia parts (PSMN013-100PS,127, PSMN015-100P,127, PSMN016-100PS,127, PSMN027-100PS,127, PSMN5R6-100PS,127, PSMN7R0-100PS,127) and STP40NF10 carry ROHS3 compliance certification. Among these, PSMN013-100PS,127 provides 68A continuous drain current with 13.9mOhm on-state resistance, closely matching the NTP52N10 current rating while offering improved compliance status.

For Thermal Performance:

PSMN5R6-100PS,127 and PSMN009-100P,127 deliver the highest power dissipation ratings (306W and 230W respectively), accommodating applications with elevated thermal demands. PSMN7R0-100PS,127 provides 100A continuous drain current with 269W power dissipation, suitable for high-current switching applications.

For Gate Drive Optimization:

STP40NF10 exhibits the lowest gate charge (62nC) and input capacitance (2180pF), minimizing gate drive circuit complexity and power consumption. PSMN027-100PS,127 offers similarly low gate charge (30nC) for applications prioritizing switching efficiency.

Frequently Asked Questions (FAQ)

Q: Can the NTP52N10 be directly replaced with any of the listed substitute parts?

A: Direct replacement is possible only with parts maintaining identical electrical specifications: 100V Vdss, 4V Vgs(th), ±20V Vgs Max, and TO-220-3 package configuration. All listed substitutes meet these core requirements. However, application-specific factors such as continuous drain current requirements, on-state resistance, and thermal dissipation must be evaluated for each substitution.

Q: What is the significance of the continuous drain current (Id) rating difference between the NTP52N10 (60A) and substitute parts?

A: The NTP52N10 is rated for 60A continuous drain current at 25°C case temperature. Substitute parts with lower Id ratings (such as PHP18NQ10T,127 at 18A or PSMN027-100PS,127 at 37A) are suitable only for applications requiring equal or lower current levels. Substitutes with higher Id ratings (PSMN009-100P,127 at 75A, PSMN5R6-100PS,127 at 100A) provide additional current capacity and are electrically compatible for lower-current applications.

Q: How does on-state resistance (Rds On) affect substitution suitability?

A: On-state resistance directly impacts power dissipation and thermal performance. The NTP52N10 exhibits 30mOhm Rds On at 26A and 10V gate voltage. Substitute parts with lower Rds On values (such as PSMN009-100P,127 at 8.8mOhm) reduce conduction losses and heat generation, improving efficiency. Higher Rds On values increase power dissipation and may require enhanced thermal management. Selection depends on the application's thermal budget and efficiency requirements.

Q: What is the importance of product status (Active vs. Obsolete) in selecting a substitute?

A: Product status indicates manufacturing availability and long-term supply assurance. The NTP52N10 is classified as Obsolete, meaning onsemi has discontinued production and support. Active products such as PSMN009-100P,127, PSMN9R5-100PS,127, and STP40NF10 ensure continued availability, technical support, and manufacturing consistency. For new designs or long-term production requirements, Active status substitutes are strongly preferred.

Q: Does RoHS compliance affect electrical performance or substitution compatibility?

A: RoHS compliance does not alter electrical performance or functional compatibility. RoHS3 compliant parts (such as PSMN013-100PS,127, PSMN015-100P,127, STP40NF10) meet environmental and regulatory requirements for lead-free manufacturing and restricted substance limitations. Selection of RoHS-compliant substitutes is necessary for applications subject to environmental regulations or customer requirements, but does not impact electrical substitution criteria.

Q: Can gate charge (Qg) differences between the NTP52N10 and substitute parts affect circuit operation?

A: Gate charge influences the energy required to switch the MOSFET and the speed of switching transitions. The NTP52N10 exhibits 135nC gate charge at 10V. Substitutes with lower gate charge (such as PSMN027-100PS,127 at 30nC or STP40NF10 at 62nC) require less gate drive energy and enable faster switching. Higher gate charge values (such as PSMN009-100P,127 at 156nC) demand greater gate drive capability but do not prevent substitution. Gate drive circuit design must accommodate the specific gate charge of the selected substitute.

Q: Is the TO-220-3 package configuration consistent across all substitute parts?

A: Yes, all listed substitute parts utilize the TO-220-3 Through Hole package configuration, ensuring mechanical and thermal interface compatibility with existing PCB layouts and heat sink mounting arrangements. Package compatibility eliminates the need for PCB redesign or mechanical modifications during substitution.

Q: What thermal considerations apply when substituting the NTP52N10?

A: The NTP52N10 dissipates up to 214W at case temperature. Substitute parts exhibit varying power dissipation ratings: lower-current devices such as PHP18NQ10T,127 (79W) and PSMN027-100PS,127 (103W) generate less heat, while higher-current devices such as PSMN5R6-100PS,127 (306W) and PSMN009-100P,127 (230W) may require enhanced thermal management. Selection must ensure the substitute's power dissipation rating aligns with the application's thermal design and heat sink capacity.

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