NTP45N06LG N-Channel 60V 45A MOSFET Equivalent & Substitute Parts

Part Overview

The NTP45N06LG is an N-Channel 60V 45A through-hole MOSFET manufactured by onsemi in TO-220-3 package configuration. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing applications and new designs. The part operates across a temperature range of -55°C to 175°C (TJ) with a maximum drain-source voltage rating of 60V and continuous drain current of 45A at 25°C.

Due to its obsolete status, alternative N-Channel 60V MOSFETs with compatible electrical and mechanical parameters are required to maintain design continuity and ensure component availability for production and field replacement applications.

Substiute Parts

NTP45N06LG
onsemiIn Stock: 6669NTP45N06LG Datasheet
NTP45N06LG
Current Part
IRFZ44EPBF
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PSMN3R0-60PS,127
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PSMN4R6-60PS,127
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STP45NF06
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STP55NF06
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STP55NF06L
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Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 45 A (Ta)
Rds On (Max) @ Id, Vgs 28 mOhm @ 22.5A, 5V
Gate Threshold Voltage (Vgs(th)) @ Id 2 V @ 250µA
Gate Charge (Qg) @ Vgs 32 nC @ 5V
Input Capacitance (Ciss) @ Vds 1700 pF @ 25V
Power Dissipation (Max) 125 W (Tj)
Operating Temperature Range -55 to 175 °C (TJ)
Package Type TO-220-3 Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the NTP45N06LG is determined by strict adherence to the following electrical and mechanical criteria:

Primary Substitution Criteria:

  • Drain to Source Voltage (Vdss): 60V (exact match required)
  • Package Type: TO-220-3 through-hole configuration (mechanical compatibility)
  • FET Type: N-Channel (functional requirement)
  • Technology: MOSFET Metal Oxide (device class)
  • Operating Temperature Range: -55°C to 175°C minimum (thermal compatibility)

Secondary Compatibility Parameters:

  • Continuous Drain Current (Id): Equal to or greater than 45A
  • Rds On (Max): Equal to or less than 28mOhm (on-resistance performance)
  • Gate Threshold Voltage (Vgs(th)): Within ±2V of specified value for gate drive compatibility
  • Gate Charge (Qg): Comparable values to ensure driver circuit compatibility
  • Input Capacitance (Ciss): Similar values to maintain switching characteristics

Substitute parts are grouped into two categories based on current rating capability: direct current-matched substitutes (45A–55A range) and higher-current alternatives (100A rating) suitable for applications with increased current headroom.

Parameter Comparison

Parameter NTP45N06LG (Main) STP45NF06 STP55NF06L STP55NF06 IRFZ44EPBF PSMN4R6-60PS,127 PSMN3R0-60PS,127
Manufacturer onsemi STMicroelectronics STMicroelectronics STMicroelectronics Infineon Technologies Nexperia USA Inc. Nexperia USA Inc.
Vdss (V) 60 60 60 60 60 60 60
Id @ 25°C (A) 45 (Ta) 38 (Tc) 55 (Tc) 50 (Tc) 48 (Tc) 100 (Tc) 100 (Tc)
Rds On (Max) (mOhm) 28 @ 22.5A, 5V 28 @ 19A, 10V 18 @ 27.5A, 10V 18 @ 27.5A, 10V 23 @ 29A, 10V 4.6 @ 25A, 10V 3 @ 25A, 10V
Vgs(th) (Max) (V) 2 @ 250µA 4 @ 250µA 1.7 @ 250µA 4 @ 250µA 4 @ 250µA 4 @ 1mA 4 @ 1mA
Qg (Max) (nC) 32 @ 5V 58 @ 10V 37 @ 4.5V 60 @ 10V 60 @ 10V 70.8 @ 10V 130 @ 10V
Ciss (Max) (pF) 1700 @ 25V 980 @ 25V 1700 @ 25V 1300 @ 25V 1360 @ 25V 4426 @ 30V 8079 @ 30V
Power Dissipation (Max) (W) 125 (Tj) 80 (Tc) 95 (Tc) 110 (Tc) 110 (Tc) 211 (Tc) 306 (Tc)
Operating Temp Range (°C) -55 to 175 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175
Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Product Status Obsolete Active Active Active Not For New Designs Obsolete Obsolete
RoHS Status REACH Unaffected ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant REACH Unaffected ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Tier 1 – Direct Current-Matched Substitutes (Preferred for Direct Replacement):

STP55NF06L (STMicroelectronics) is the primary recommended substitute. This device maintains 60V Vdss rating, provides 55A continuous drain current (exceeding the 45A requirement), and operates across the full -55°C to 175°C temperature range. The part is Active status with ROHS3 compliance. Input capacitance matches the NTP45N06LG at 1700 pF, ensuring compatible switching characteristics. Gate threshold voltage of 1.7V @ 250µA provides improved gate drive efficiency compared to the original 2V specification. Rds On of 18 mOhm @ 27.5A, 10V represents improved on-resistance performance. Gate charge of 37 nC @ 4.5V is lower than the original 32 nC @ 5V, reducing driver stress. Inventory availability is 15,465 units.

STP55NF06 (STMicroelectronics) serves as an alternative direct substitute with identical 60V Vdss and 50A continuous drain current. This part is Active status with ROHS3 compliance and operates across -55°C to 175°C. Input capacitance of 1300 pF is slightly lower than the original, and Rds On of 18 mOhm @ 27.5A, 10V provides equivalent on-resistance performance. Gate charge of 60 nC @ 10V is higher than the original specification. Inventory availability is 155,400 units, providing superior supply chain security.

STP45NF06 (STMicroelectronics) provides a current-matched alternative at 38A continuous drain current. This part is Active status with ROHS3 compliance. Rds On of 28 mOhm @ 19A, 10V matches the original specification exactly. However, the maximum operating temperature is specified as 175°C without lower bound documentation. Inventory availability is 8,822 units.

Tier 2 – Higher Current Capacity Alternatives (For Applications Requiring Current Headroom):

IRFZ44EPBF (Infineon Technologies) provides 48A continuous drain current with 60V Vdss rating. This part is classified as Not For New Designs but maintains REACH Unaffected status. Rds On of 23 mOhm @ 29A, 10V is superior to the original 28 mOhm specification. Operating temperature range is -55°C to 175°C. Gate charge of 60 nC @ 10V and input capacitance of 1360 pF are comparable to the original. Inventory availability is 10,420 units.

PSMN4R6-60PS,127 (Nexperia USA Inc.) provides 100A continuous drain current with 60V Vdss rating. This part is Obsolete status but ROHS3 compliant. Rds On of 4.6 mOhm @ 25A, 10V represents significantly improved on-resistance performance. Operating temperature range is -55°C to 175°C. Input capacitance of 4426 pF @ 30V is substantially higher than the original, requiring driver circuit evaluation. Gate charge of 70.8 nC @ 10V is higher than the original specification. Inventory availability is 8,805 units.

PSMN3R0-60PS,127 (Nexperia USA Inc.) provides 100A continuous drain current with 60V Vdss rating. This part is Obsolete status but ROHS3 compliant. Rds On of 3 mOhm @ 25A, 10V represents the lowest on-resistance among all alternatives. Operating temperature range is -55°C to 175°C. Input capacitance of 8079 pF @ 30V is substantially higher than the original, requiring comprehensive driver circuit evaluation. Gate charge of 130 nC @ 10V is significantly higher than the original specification. Inventory availability is 2,280 units.

Selection Criteria Summary:

For direct replacement in existing designs, STP55NF06L or STP55NF06 are recommended based on Active product status, ROHS3 compliance, and parameter compatibility. STP55NF06 offers superior inventory availability (155,400 units) for high-volume applications.

For new designs requiring higher current capacity or improved on-resistance performance, PSMN4R6-60PS,127 or PSMN3R0-60PS,127 provide 100A capability, though higher input capacitance and gate charge require driver circuit validation.

IRFZ44EPBF is not recommended for new designs due to its Not For New Designs status, despite acceptable electrical parameters.

Frequently Asked Questions (FAQ)

Q: Can STP55NF06L directly replace NTP45N06LG in existing PCB layouts?

A: Yes. Both devices use TO-220-3 package configuration with identical pin assignments and mechanical dimensions. No PCB modification is required. The higher current rating (55A vs. 45A) and improved on-resistance (18 mOhm vs. 28 mOhm) provide enhanced performance margin.

Q: What is the difference between STP55NF06 and STP55NF06L?

A: Both devices provide 60V Vdss and 55A continuous drain current in TO-220-3 package. STP55NF06L features lower gate threshold voltage (1.7V vs. 4V), lower gate charge (37 nC @ 4.5V vs. 60 nC @ 10V), and identical input capacitance (1700 pF). STP55NF06L is optimized for lower gate drive voltage applications. STP55NF06 operates at 10V gate drive voltage with higher gate charge specification.

Q: Why do PSMN4R6-60PS,127 and PSMN3R0-60PS,127 have significantly higher input capacitance?

A: These devices are rated for 100A continuous drain current, compared to 45A for the NTP45N06LG. Higher current capability requires larger die area and increased input capacitance (Ciss). The 4426 pF and 8079 pF values respectively require gate driver circuits with sufficient current sourcing capability to maintain acceptable switching speeds.

Q: Is the NTP45N06LG still available for purchase?

A: The NTP45N06LG is classified as Obsolete. However, 6,577 units are reported in stock as new original inventory. For long-term supply chain security, transition to Active status alternatives such as STP55NF06 or STP55NF06L is recommended.

Q: What is the impact of different gate threshold voltage specifications on circuit design?

A: Gate threshold voltage (Vgs(th)) determines the minimum gate-source voltage required to initiate conduction. The NTP45N06LG specifies 2V @ 250µA, while most substitutes specify 4V @ 250µA or 1mA. Lower threshold voltage (STP55NF06L at 1.7V) enables operation with lower gate drive voltages. Higher threshold voltage requires higher gate drive voltage to ensure full conduction. Gate driver circuits must be evaluated to confirm compatibility with the selected substitute's threshold voltage specification.

Q: Can higher-current devices (100A) be used in applications designed for 45A operation?

A: Yes. Higher current rating provides design margin and improved thermal performance due to lower on-resistance. However, the substantially higher input capacitance (4426 pF to 8079 pF vs. 1700 pF) and gate charge (70.8 nC to 130 nC vs. 32 nC) require gate driver circuit evaluation. Switching frequency, driver output impedance, and power dissipation in the driver circuit must be reassessed to confirm compatibility.

Q: What does ROHS3 compliance indicate?

A: ROHS3 compliance indicates conformance to the Restriction of Hazardous Substances Directive 2011/65/EU as amended by Directive (EU) 2015/863. This certification confirms the device does not contain restricted substances including lead, cadmium, mercury, hexavalent chromium, polybrominated biphenyls, or polybrominated diphenyl ethers above specified thresholds. ROHS3 compliance is required for many commercial and industrial applications.

Q: Why is product status (Active vs. Obsolete vs. Not For New Designs) important in component selection?

A: Product status indicates manufacturer support and long-term availability. Active status devices receive ongoing manufacturing support, design improvements, and extended availability. Obsolete devices have discontinued production but may have remaining inventory. Not For New Designs devices are no longer recommended for new applications and may have limited future availability. For new designs, Active status components are strongly preferred to ensure long-term supply chain continuity.

Q: How do I determine if a substitute part is suitable for my specific application?

A: Evaluate the following parameters in order of priority: (1) Drain-Source Voltage (Vdss) must equal or exceed the original specification; (2) Continuous Drain Current (Id) must equal or exceed the original specification; (3) Package type must be identical (TO-220-3); (4) Operating temperature range must encompass the application requirements; (5) On-resistance (Rds On) should be equal to or lower than the original; (6) Gate threshold voltage must be compatible with the gate driver circuit; (7) Input capacitance and gate charge must be compatible with the gate driver's current sourcing capability. Consult device datasheets and perform circuit simulation when substituting devices with significantly different electrical characteristics.

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