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NTP35N15G Equivalent & Substitute Parts
Part Overview
The NTP35N15G is an N-Channel MOSFET manufactured by onsemi, rated for 150V drain-to-source voltage with 37A continuous drain current in a Through Hole TO-220 package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The part operates across a temperature range of -55°C to 150°C and is suitable for applications requiring moderate to high current switching at 150V levels.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 150 | V |
| Continuous Drain Current (Id) @ 25°C | 37 | A (Ta) |
| On-State Resistance (Rds On) @ 18.5A, 10V | 50 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 4 | V |
| Gate Charge (Qg) @ 10V | 100 | nC |
| Input Capacitance (Ciss) @ 25V | 3200 | pF |
| Power Dissipation (Max) | 2 (Ta), 178 (Tj) | W |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Package Type | TO-220-3 | Through Hole |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
Substitute Part Grouping Explanation
Substitution of the NTP35N15G is determined by strict equivalence across the following critical parameters:
Voltage Rating: All substitute parts must maintain a Drain-to-Source Voltage (Vdss) of 150V to ensure compatibility with the original circuit design.
Current Capability: Substitute parts must support continuous drain current (Id) at or above 37A to maintain functional equivalence in high-current switching applications.
Package Configuration: All substitutes must use the TO-220-3 Through Hole package to ensure mechanical and thermal compatibility with existing PCB layouts and heatsinking arrangements.
Gate Drive Voltage: Substitute parts must operate with a maximum gate drive voltage (Vgs Max) of ±20V to maintain compatibility with existing gate drive circuits.
Temperature Range: Substitute parts must support the operating temperature range of -55°C to 150°C (or higher) to ensure reliability across the intended application environment.
The two substitute parts identified—AOT254L and IRFB4615PBF—meet these core substitution criteria while offering active product status and improved availability compared to the obsolete NTP35N15G.
Parameter Comparison
| Parameter | NTP35N15G (onsemi) | AOT254L (Alpha & Omega) | IRFB4615PBF (Infineon) | Unit |
|---|---|---|---|---|
| Drain to Source Voltage (Vdss) | 150 | 150 | 150 | V |
| Continuous Drain Current (Id) @ 25°C | 37 (Ta) | 32 (Tc) | 35 (Tc) | A |
| On-State Resistance (Rds On) @ 10V | 50 @ 18.5A | 46 @ 20A | 39 @ 21A | mOhm |
| Gate Threshold Voltage (Vgs(th)) | 4 @ 250µA | 2.7 @ 250µA | 5 @ 100µA | V |
| Gate Charge (Qg) @ 10V | 100 | 40 | 26 | nC |
| Input Capacitance (Ciss) | 3200 @ 25V | 2150 @ 75V | 1750 @ 50V | pF |
| Power Dissipation (Max) | 2 (Ta), 178 (Tj) | 2.1 (Ta), 125 (Tc) | 144 (Tc) | W |
| Operating Temperature Range | -55 to 150 | -55 to 175 | -55 to 175 | °C (TJ) |
| Package Type | TO-220-3 | TO-220-3 | TO-220-3 | — |
| Product Status | Obsolete | Active | Active | — |
| RoHS Status | Not specified | ROHS3 Compliant | ROHS3 Compliant | — |
Engineering Selection Recommendations
IRFB4615PBF (Infineon Technologies) is the primary substitute for the NTP35N15G. This part maintains the 150V voltage rating and delivers 35A continuous drain current, closely matching the original 37A specification. The IRFB4615PBF features superior on-state resistance (39 mOhm versus 50 mOhm), lower gate charge (26 nC versus 100 nC), and reduced input capacitance (1750 pF versus 3200 pF), resulting in improved switching efficiency and reduced gate drive power requirements. The device carries active product status, ROHS3 compliance, and an extended operating temperature range to 175°C. Inventory availability is substantial at 26,200 units.
AOT254L (Alpha & Omega Semiconductor Inc.) serves as a secondary substitute option. While it delivers 32A continuous drain current (slightly below the original 37A specification), it maintains full 150V voltage rating compatibility. The AOT254L offers comparable on-state resistance (46 mOhm), significantly lower gate charge (40 nC), and reduced input capacitance (2150 pF). This part is active, ROHS3 compliant, and suitable for applications where the 32A rating is sufficient. Inventory availability is 5,195 units.
Both substitute parts are classified as active products with current manufacturing support, ensuring long-term availability and design continuity. Both comply with ROHS3 standards and maintain the TO-220-3 package configuration required for direct mechanical and thermal compatibility.
Frequently Asked Questions (FAQ)
Q: Can the IRFB4615PBF directly replace the NTP35N15G without circuit modifications?
A: Yes. The IRFB4615PBF maintains identical voltage rating (150V), comparable current rating (35A versus 37A), and identical package configuration (TO-220-3). The lower on-state resistance and gate charge represent performance improvements that do not require circuit redesign. Gate drive voltage compatibility (±20V maximum) is maintained.
Q: What is the primary difference between the AOT254L and IRFB4615PBF substitutes?
A: The IRFB4615PBF delivers 35A continuous drain current compared to the AOT254L's 32A rating. The IRFB4615PBF also features lower on-state resistance (39 mOhm versus 46 mOhm) and significantly lower gate charge (26 nC versus 40 nC). Both maintain 150V voltage rating and TO-220-3 packaging. Selection depends on whether the application requires the higher current capability of the IRFB4615PBF.
Q: Why is the NTP35N15G classified as obsolete?
A: The NTP35N15G is no longer in active production by onsemi. The substitute parts identified—IRFB4615PBF and AOT254L—are actively manufactured and represent current technology offerings from Infineon and Alpha & Omega Semiconductor, respectively.
Q: Are there thermal considerations when substituting these parts?
A: The IRFB4615PBF and AOT254L both feature extended operating temperature ranges (-55°C to 175°C) compared to the original NTP35N15G (-55°C to 150°C). Both parts are rated for Through Hole TO-220 mounting and are compatible with standard heatsinking arrangements. The lower on-state resistance of the substitute parts results in reduced power dissipation under identical operating conditions.
Q: Do the substitute parts require different gate drive circuits?
A: No. Both substitute parts maintain the ±20V maximum gate voltage specification of the original NTP35N15G. Existing gate drive circuits designed for the NTP35N15G are compatible with both substitutes. The lower gate charge of the substitute parts may allow for reduced gate drive power consumption.
Q: What is the significance of the lower gate charge in the substitute parts?
A: Lower gate charge (26 nC for IRFB4615PBF and 40 nC for AOT254L versus 100 nC for NTP35N15G) reduces the energy required to switch the transistor on and off. This results in lower gate drive power dissipation and potentially faster switching transitions, improving overall circuit efficiency.
Q: Are both substitute parts RoHS compliant?
A: Yes. Both the IRFB4615PBF and AOT254L are ROHS3 compliant. The original NTP35N15G RoHS status is not specified in the available documentation.
Q: Can I use the AOT254L if my application requires the full 37A rating?
A: The AOT254L is rated for 32A continuous drain current, which is below the original 37A specification. If your application requires sustained operation at or above 37A, the IRFB4615PBF (35A rating) is the appropriate substitute. If peak currents exceed 32A but average operation is below this threshold, thermal analysis is required to confirm suitability.
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