NTP18N06G N-Channel 60V 15A MOSFET Equivalent & Substitute Parts

Part Overview

The NTP18N06G is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage and 15A continuous drain current in a TO-220 through-hole package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing production and design requirements. The part operates across a temperature range of -55°C to 175°C and dissipates up to 48.4W at the case temperature.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	15	A
On-State Resistance (Rds On) @ 7.5A, 10V	90	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	22	nC
Input Capacitance (Ciss) @ 25V	450	pF
Power Dissipation (Max)	48.4	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the NTP18N06G is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
Continuous Drain Current (Id): Must equal or exceed 15A at 25°C
Package Type: Must be TO-220-3 through-hole configuration
Gate Drive Voltage: Must support 10V drive voltage
Operating Temperature Range: Must encompass -55°C to 175°C minimum

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower values indicate improved performance but are not mandatory for substitution
Gate Charge (Qg): Affects switching speed; higher values acceptable for direct replacement
Input Capacitance (Ciss): Affects gate drive requirements; variations acceptable within application tolerance
Power Dissipation: Must support thermal requirements of the application

Substitute parts are grouped into two categories based on voltage rating alignment:

Category 1: 60V Rated Devices — Direct voltage class match with NTP18N06G

IRF1010EPBF (84A, 200W)
IRF1010EZPBF (75A, 140W)

Category 2: Higher Voltage Rated Devices — Suitable for 60V applications with voltage margin

IPP015N04NGXKSA1 (40V, 120A) — Lower voltage; application-dependent
IPP80N08S2L07AKSA1 (75V, 80A) — Higher voltage with margin
IPP50R199CPXKSA1 (550V, 17A) — Significantly higher voltage for specialized applications
IPP60R125CPXKSA1 (650V, 25A) — High-voltage applications
IPP60R165CPXKSA1 (600V, 21A) — High-voltage applications
IPP60R199CPXKSA1 (650V, 16A) — High-voltage applications
IPP60R299CPXKSA1 (650V, 11A) — High-voltage applications
IPP80N03S4L03AKSA1 (30V, 80A) — Lower voltage; application-dependent

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Power Diss. (W)	Temp Range (°C)	Package	Status
NTP18N06G	onsemi	60	15	90 @ 7.5A	22 @ 10V	450 @ 25V	48.4	-55 to 175	TO-220-3	Obsolete
IRF1010EPBF	Infineon	60	84	12 @ 50A	130 @ 10V	3210 @ 25V	200	-55 to 175	TO-220-3	Not For New Designs
IRF1010EZPBF	Infineon	60	75	8.5 @ 51A	86 @ 10V	2810 @ 25V	140	-55 to 175	TO-220-3	Active
IPP015N04NGXKSA1	Infineon	40	120	1.5 @ 100A	250 @ 10V	20000 @ 20V	250	-55 to 175	TO-220-3	Active
IPP80N03S4L03AKSA1	Infineon	30	80	2.7 @ 80A	140 @ 10V	9750 @ 25V	136	-55 to 175	TO-220-3	Active
IPP80N08S2L07AKSA1	Infineon	75	80	7.1 @ 80A	233 @ 10V	5400 @ 25V	300	-55 to 175	TO-220-3	Obsolete
IPP50R199CPXKSA1	Infineon	550	17	199 @ 9.9A	45 @ 10V	1800 @ 100V	139	-55 to 150	TO-220-3	Not For New Designs
IPP60R125CPXKSA1	Infineon	650	25	125 @ 16A	70 @ 10V	2500 @ 100V	208	-55 to 150	TO-220-3	Not For New Designs
IPP60R165CPXKSA1	Infineon	600	21	165 @ 12A	52 @ 10V	2000 @ 100V	192	-55 to 150	TO-220-3	Not For New Designs
IPP60R199CPXKSA1	Infineon	650	16	199 @ 9.9A	43 @ 10V	1520 @ 100V	139	-55 to 150	TO-220-3	Not For New Designs
IPP60R299CPXKSA1	Infineon	650	11	299 @ 6.6A	29 @ 10V	1100 @ 100V	96	-55 to 150	TO-220-3	Not For New Designs

Engineering Selection Recommendations

Primary Recommendation: IRF1010EZPBF

The IRF1010EZPBF is the preferred substitute for the NTP18N06G. This device matches the 60V voltage class exactly and exceeds the 15A current requirement with 75A continuous drain current. The IRF1010EZPBF maintains the identical TO-220-3 package configuration and supports the full -55°C to 175°C operating temperature range. The part carries Active product status and ROHS3 compliance, ensuring long-term availability and regulatory alignment. The lower on-state resistance (8.5mOhm versus 90mOhm) provides improved thermal performance and reduced power dissipation in the application.

Secondary Recommendation: IRF1010EPBF

The IRF1010EPBF provides an alternative 60V solution with higher current capability (84A) and greater power dissipation headroom (200W). This part is classified as Not For New Designs but remains suitable for replacement applications where the NTP18N06G is already deployed. The package, voltage rating, and temperature range are identical to the primary recommendation.

Alternative for Lower Voltage Applications: IPP80N03S4L03AKSA1

For applications where 30V operation is acceptable, the IPP80N03S4L03AKSA1 offers superior current handling (80A) and significantly lower on-state resistance (2.7mOhm). This OptiMOS™ series device carries Active status and ROHS3 compliance. The lower voltage rating restricts use to applications with maximum supply voltages below 30V.

High-Voltage Alternatives: IPP50R199CPXKSA1, IPP60R125CPXKSA1, IPP60R165CPXKSA1, IPP60R199CPXKSA1, IPP60R299CPXKSA1

These CoolMOS™ series devices are suitable for applications requiring voltage ratings between 550V and 650V. Current ratings range from 11A to 17A, meeting or exceeding the NTP18N06G specification. These parts are classified as Not For New Designs. Operating temperature range is limited to -55°C to 150°C, which is 25°C below the NTP18N06G specification.

Lower Voltage Alternative: IPP015N04NGXKSA1

The IPP015N04NGXKSA1 is rated for 40V operation with exceptional current capability (120A) and minimal on-state resistance (1.5mOhm). This OptiMOS™ series device carries Active status and ROHS3 compliance. The 40V rating restricts application to systems with maximum supply voltages below 40V.

Frequently Asked Questions (FAQ)

Q: Can the IRF1010EZPBF directly replace the NTP18N06G without circuit modifications?

A: The IRF1010EZPBF is a direct pin-compatible replacement in the TO-220-3 package. Both devices share identical gate drive voltage requirements (10V), matching gate threshold voltage (4V @ 250µA), and identical operating temperature range (-55°C to 175°C). No circuit modifications are required for substitution. The IRF1010EZPBF exhibits lower on-state resistance, which reduces power dissipation and improves thermal performance.

Q: Why is the NTP18N06G classified as obsolete?

A: The NTP18N06G is an older onsemi design that has been superseded by more efficient alternatives from both onsemi and competing manufacturers. Infineon's IRF1010 series and OptiMOS™ family offer superior performance metrics, better thermal characteristics, and active product support. Manufacturers discontinue older designs to consolidate product portfolios and encourage migration to newer technology nodes.

Q: What is the difference between the IRF1010EPBF and IRF1010EZPBF?

A: Both devices are rated for 60V and share the same TO-220-3 package. The IRF1010EPBF is rated for 84A continuous drain current with 200W power dissipation and carries Not For New Designs status. The IRF1010EZPBF is rated for 75A continuous drain current with 140W power dissipation and carries Active status. The IRF1010EZPBF is preferred for new designs due to its active product classification and ongoing manufacturer support.

Q: Can I use a 40V-rated device like the IPP015N04NGXKSA1 in a 60V application?

A: No. The drain-to-source voltage rating (Vdss) is an absolute maximum rating. Using a 40V-rated device in a 60V application will result in device failure. The IPP015N04NGXKSA1 is suitable only for applications with maximum supply voltages below 40V.

Q: Can I use a high-voltage device like the IPP60R125CPXKSA1 (650V) in a 60V application?

A: Yes. High-voltage rated devices can be used in lower-voltage applications. The IPP60R125CPXKSA1 is rated for 650V, which exceeds the 60V requirement. However, this device is classified as Not For New Designs and has a reduced operating temperature range (-55°C to 150°C versus -55°C to 175°C for the NTP18N06G). The higher voltage rating results in higher on-state resistance (125mOhm) compared to the NTP18N06G (90mOhm), which increases power dissipation. Use high-voltage alternatives only when 60V-rated options are unavailable.

Q: What does ROHS3 compliance mean for component substitution?

A: ROHS3 (Restriction of Hazardous Substances Directive 3) compliance indicates that the device meets European Union environmental regulations restricting the use of specific hazardous materials including lead, mercury, cadmium, and certain flame retardants. ROHS3 compliance is required for products sold in the European Union and many other markets. The IRF1010EZPBF carries ROHS3 compliance, ensuring regulatory alignment with modern procurement standards.

Q: Why do some substitute parts have lower operating temperature maximums?

A: The CoolMOS™ series devices (IPP50R199CPXKSA1, IPP60R125CPXKSA1, IPP60R165CPXKSA1, IPP60R199CPXKSA1, IPP60R299CPXKSA1) are rated to 150°C maximum junction temperature, compared to 175°C for the NTP18N06G. This reflects different thermal design specifications and manufacturing processes. Applications requiring operation above 150°C must use devices with higher temperature ratings, such as the IRF1010EZPBF (175°C maximum).

Q: What is gate charge (Qg) and why does it vary among substitutes?

A: Gate charge is the total charge required to drive the gate from off to on state at a specified gate voltage (10V in this case). The NTP18N06G requires 22nC, while substitutes range from 29nC to 250nC. Higher gate charge requires more gate drive current and increases switching losses. Lower gate charge improves switching speed and reduces power dissipation. Variations in gate charge are acceptable for direct substitution as long as the gate driver circuit can supply the required charge.

Q: Is on-state resistance (Rds On) critical for substitution?

A: On-state resistance affects power dissipation and thermal performance but is not a limiting factor for substitution. The NTP18N06G has 90mOhm Rds On, while substitutes range from 1.5mOhm to 299mOhm. Lower resistance values reduce power dissipation and improve efficiency. Higher resistance values increase power dissipation but remain acceptable if the application thermal design accommodates the additional heat. Verify that the application's thermal management system can handle the power dissipation of the selected substitute.

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