NTNS3A65PZT5G Equivalent & Substitute Parts

Part Overview

The NTNS3A65PZT5G is a P-Channel MOSFET manufactured by onsemi, rated for 20V drain-to-source voltage with a continuous drain current of 281mA at 25°C. The device is housed in a surface mount SOT-883 (XDFN3) package measuring 1x0.6mm and dissipates a maximum of 155mW. This part is classified as obsolete, necessitating identification of equivalent alternatives for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while conforming to the same or compatible package specifications.

Key Parameters

Parameter	Value	Unit
FET Type	P-Channel	—
Drain to Source Voltage (Vdss)	20	V
Current - Continuous Drain (Id) @ 25°C	281	mA
Rds On (Max) @ Id, Vgs	1.3	Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id	1	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.1	nC @ 4.5V
Vgs (Max)	±8	V
Input Capacitance (Ciss) (Max) @ Vds	44	pF @ 10V
Power Dissipation (Max)	155	mW (Ta)
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	3-XFDFN (SOT-883)	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the NTNS3A65PZT5G are selected based on strict electrical and mechanical compatibility criteria. All candidates must satisfy the following requirements:

Mandatory Matching Parameters:

FET Type: P-Channel
Drain to Source Voltage (Vdss): 20V minimum
Package / Case: SOT-883 (XDFN3) or compatible 3-pin surface mount package
Mounting Type: Surface Mount
Operating Temperature Range: -55°C to 150°C (TJ) or equivalent
RoHS Compliance: ROHS3 Compliant

Electrical Performance Criteria: Substitute parts must maintain continuous drain current (Id) at or above 281mA at 25°C. Gate charge (Qg), input capacitance (Ciss), and threshold voltage (Vgs(th)) must remain within acceptable ranges to ensure circuit functionality without requiring design modifications. On-state resistance (Rds On) should not exceed the original specification to prevent excessive power dissipation in switching applications.

Compliance & Regulatory: All substitutes must maintain ROHS3 compliance, MSL rating of 1 (Unlimited), and REACH unaffected status to ensure regulatory alignment with the original part.

Parameter Comparison

Parameter	NTNS3A65PZT5G (Main)	NTNS3A67PZT5G	PMZ950UPEYL	Unit
Manufacturer	onsemi	onsemi	NXP Semiconductors	—
FET Type	P-Channel	P-Channel	P-Channel	—
Drain to Source Voltage (Vdss)	20	20	20	V
Current - Continuous Drain (Id) @ 25°C	281	—	500	mA
Rds On (Max) @ Id, Vgs	1.3 @ 200mA, 4.5V	—	1.4 @ 500mA, 4.5V	Ω
Vgs(th) (Max) @ Id	1 @ 250µA	—	0.95 @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	1.1 @ 4.5V	—	2.1 @ 4.5V	nC
Vgs (Max)	±8	—	±8	V
Input Capacitance (Ciss) (Max) @ Vds	44 @ 10V	—	43 @ 10V	pF
Power Dissipation (Max)	155 (Ta)	—	360 (Ta), 2.7 (Tc)	mW
Operating Temperature	-55 to 150	—	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	—
Package / Case	3-XFDFN (SOT-883)	3-XFDFN (SOT-883)	SC-101, SOT-883	—
Product Status	Obsolete	Last Time Buy	Active	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	—

Engineering Selection Recommendations

NTNS3A67PZT5G (onsemi)

The NTNS3A67PZT5G is a direct onsemi alternative within the NTNS3 base product family. Both parts share identical package specifications (SOT-883 XDFN3), voltage ratings (20V Vdss), and thermal operating range (-55°C to 150°C). This part maintains Last Time Buy status, indicating limited availability. Selection of this substitute is appropriate for designs requiring continuity within the onsemi product ecosystem and where electrical specifications align with circuit requirements. ROHS3 compliance and MSL 1 rating ensure regulatory and handling compatibility.

PMZ950UPEYL (NXP Semiconductors)

The PMZ950UPEYL is an active production alternative from NXP Semiconductors (Nexperia brand) offering enhanced electrical performance. This device provides 500mA continuous drain current, exceeding the original 281mA specification, with comparable on-state resistance (1.4Ω vs. 1.3Ω) and lower threshold voltage (950mV vs. 1V). The PMZ950UPEYL delivers higher power dissipation capability (360mW at Ta, 2.7W at Tc) and maintains SOT-883 package compatibility. Active production status ensures long-term availability. This substitute is suitable for applications requiring higher current capacity or thermal headroom without circuit redesign. ROHS3 compliance and MSL 1 rating confirm regulatory alignment.

Product Status Considerations

The NTNS3A65PZT5G is classified as obsolete, making immediate transition to an active substitute necessary for ongoing production. The PMZ950UPEYL, with active production status, provides the most reliable long-term supply assurance. The NTNS3A67PZT5G, though within the same manufacturer family, carries Last Time Buy status and represents a transitional option with limited future availability.

Frequently Asked Questions (FAQ)

Q: Can the PMZ950UPEYL directly replace the NTNS3A65PZT5G without circuit modifications?

A: Yes. Both devices share identical 20V Vdss rating, SOT-883 package configuration, and -55°C to 150°C operating temperature range. The PMZ950UPEYL provides higher current capacity (500mA vs. 281mA) and greater power dissipation capability, making it a functionally compatible upgrade. No circuit redesign is required.

Q: What is the primary difference between NTNS3A67PZT5G and PMZ950UPEYL?

A: The NTNS3A67PZT5G is an onsemi product with Last Time Buy status, offering supply continuity within the onsemi NTNS3 family. The PMZ950UPEYL is an active NXP Semiconductors product with higher current rating (500mA), greater power dissipation (360mW at Ta), and assured long-term availability. Selection depends on supply chain strategy and performance requirements.

Q: Are all three parts RoHS3 compliant?

A: Yes. The NTNS3A65PZT5G, NTNS3A67PZT5G, and PMZ950UPEYL are all ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating, ensuring regulatory and handling compatibility across all substitutes.

Q: Does the higher gate charge of PMZ950UPEYL (2.1nC vs. 1.1nC) affect circuit performance?

A: Gate charge differences affect switching speed and driver circuit requirements. The PMZ950UPEYL's higher gate charge (2.1nC at 4.5V) may require slightly longer switching transitions compared to the original part (1.1nC). Circuit validation is necessary to confirm driver capability, though the difference is typically manageable in most switching applications.

Q: What is the significance of the SOT-883 package designation?

A: SOT-883 (XDFN3) is a 3-pin surface mount package measuring 1x0.6mm. All three parts use this identical package, ensuring mechanical and electrical pin compatibility. PCB layout and footprint remain unchanged during substitution.

Q: Why is the NTNS3A65PZT5G classified as obsolete?

A: Obsolete status indicates the manufacturer has discontinued production and no longer accepts new orders. Existing inventory may be available through authorized distributors, but long-term supply cannot be assured. Transition to active alternatives such as PMZ950UPEYL is recommended for new designs and ongoing production.

Q: Can input capacitance differences (44pF vs. 43pF) impact circuit design?

A: Input capacitance differences of 1pF are negligible in most applications. Both values fall within typical operating ranges for P-Channel MOSFETs in this voltage class and do not require circuit modifications.

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