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NTMTS1D6N10MCTXG Equivalent & Substitute MOSFETs Reference
Part Overview
NTMTS1D6N10MCTXG is an N-Channel Power MOSFET designed for high-power switching applications. It features a drain-to-source voltage rating of 100V and supports continuous drain currents of up to 36A (Ta) and 273A (Tc). The part is supplied in a surface-mount 8-DFNW (8.3x8.4) package, suitable for compact PCB designs. As electronic manufacturing requirements shift, it is necessary to identify alternative models to ensure supply chain resilience, compliance with industry standards, and uninterrupted production. The availability of equivalent or direct substitute parts allows for immediate replacement without design modifications.
Substiute Parts
Key Parameters
| Parameter | NTMTS1D6N10MCTXG |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Continuous Drain Current (Id) @ 25°C | 36A (Ta), 273A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 90A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 650µA |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 7630 pF @ 50 V |
| Power Dissipation (Max) | 5W (Ta), 291W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-DFNW (8.3x8.4) |
| Package / Case | 8-PowerTDFN |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
Substitute Part Grouping Explanation
Substitution is determined strictly by matching key electrical parameters, mechanical dimensions, regulatory certifications, and package compatibility. The allowed substitute, NVMTS1D6N10MCTXG, is listed due to identical critical characteristics including FET type, drain-to-source voltage, continuous drain current ratings, Rds(on), gate threshold voltage, gate charge, maximum gate-source voltage, input capacitance, power dissipation, temperature range, mounting type, device package, RoHS compliance, moisture sensitivity level, and REACH status. Each of these parameters must be equivalent to ensure direct interchangeability without modification to the application or PCB.
Parameter Comparison
| Parameter | NTMTS1D6N10MCTXG | NVMTS1D6N10MCTXG |
|---|---|---|
| Manufacturer | onsemi | onsemi |
| Category | Transistors, FETs, MOSFETs | Transistors, FETs, MOSFETs |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | 100 V |
| Continuous Drain Current (Id) @ 25°C | 36A (Ta), 273A (Tc) | 36A (Ta), 273A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 90A, 10V | 1.7mOhm @ 90A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 650µA | 4V @ 650µA |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 10 V | 106 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 7630 pF @ 50 V | 7630 pF @ 50 V |
| Power Dissipation (Max) | 5W (Ta), 291W (Tc) | 5W (Ta), 291W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | 8-DFNW (8.3x8.4) | 8-DFNW (8.3x8.4) |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) |
| REACH Status | REACH Unaffected | REACH Unaffected |
| Product Status | Active | Active |
Engineering Selection Recommendations
The main and substitute parts hold "Active" product status and are ROHS3 compliant with REACH unaffected designation. Both components have an MSL of 1 (unlimited). The substitute part, NVMTS1D6N10MCTXG, is also Automotive grade and AEC-Q101 qualified. Engineering selection can thus be based on product status, compliance, and qualification parameters as provided.
Frequently Asked Questions (FAQ)
Q: What criteria were used to select substitute MOSFETs for NTMTS1D6N10MCTXG?
A: Substitutes were selected based solely on identical FET type, drain-to-source voltage, current ratings, Rds(on), gate threshold voltage, gate charge, Vgs(max), input capacitance, power dissipation, operating temperature, mounting type, package dimensions, RoHS and REACH status, and moisture sensitivity level.
Q: Is the package for NVMTS1D6N10MCTXG identical to the original NTMTS1D6N10MCTXG?
A: Yes. Both are surface mount devices in the 8-DFNW (8.3x8.4) / 8-PowerTDFN package.
Q: Are there any device-level differences between NTMTS1D6N10MCTXG and NVMTS1D6N10MCTXG that affect interchangeability?
A: No. All relevant electrical and mechanical parameters, and compliance certifications are identical.
Q: Is qualification or compliance status different between the parts?
A: Both parts are ROHS3 compliant and REACH unaffected. NVMTS1D6N10MCTXG is additionally qualified to AEC-Q101 and Automotive grade per the provided information.
Q: How is moisture sensitivity handled for both devices?
A: Both have an MSL of 1 (unlimited), suitable for standard handling and assembly processes.
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