NTMSD3P102R2 Equivalent & Substitute Parts

Part Overview

The NTMSD3P102R2 is a P-Channel MOSFET manufactured by onsemi, rated for 20V drain-to-source voltage with a continuous drain current of 2.34A at 25°C. This device features an isolated Schottky diode and is housed in an 8-SOIC surface mount package. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design requirements and production continuity.

Substiute Parts

NTMSD3P102R2

onsemiIn Stock: 3166NTMSD3P102R2 Datasheet

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DMS2085LSD-13

Diodes IncorporatedIn Stock: 3420DMS2085LSD-13 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the NTMSD3P102R2 is based on strict electrical and mechanical parameter alignment within the P-Channel MOSFET category. The following criteria determine valid substitution:

Critical Matching Parameters:

• FET Type: P-Channel topology
• Drain to Source Voltage (Vdss): 20V minimum rating
• Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.05A, 10V
• Package / Case: 8-SOIC form factor (0.154", 3.90mm Width)
• FET Feature: Schottky Diode (Isolated)
• Operating Temperature Range: -55°C to 150°C (TJ)

Allowable Parameter Variance:

• Continuous Drain Current (Id): Equal to or greater than 2.34A
• Gate Charge (Qg): Lower values acceptable (reduced switching losses)
• Input Capacitance (Ciss): Lower values acceptable (improved switching performance)
• Power Dissipation (Max): Equal to or greater than 730mW
• Vgs(th): Within ±20V maximum gate voltage specification

The DMS2085LSD-13 meets all critical matching parameters and demonstrates improved electrical performance in secondary characteristics.

Parameter Comparison

Engineering Selection Recommendations

The DMS2085LSD-13 from Diodes Incorporated is a direct functional substitute for the obsolete NTMSD3P102R2. Selection of this alternative is supported by the following factors:

Electrical Compatibility: All critical electrical parameters match or exceed the original specification. The DMS2085LSD-13 provides identical Rds On performance (85 mOhm @ 3.05A, 10V) and maintains the same 20V Vdss rating. The substitute offers higher continuous drain current capability (3.3A versus 2.34A), providing design margin for existing applications.

Mechanical Compatibility: Both devices utilize identical 8-SOIC packaging (0.154", 3.90mm Width) with surface mount configuration, enabling direct PCB layout compatibility without redesign.

Regulatory and Compliance Status: The DMS2085LSD-13 holds Active product status with ROHS3 compliance, whereas the NTMSD3P102R2 is classified as Obsolete and RoHS non-compliant. This transition addresses long-term supply chain sustainability and regulatory requirements for new production.

Performance Advantages: The substitute demonstrates improved switching characteristics with significantly lower gate charge (7.8 nC versus 25 nC) and reduced input capacitance (353 pF versus 750 pF), resulting in lower switching losses and improved efficiency in switching applications.

Frequently Asked Questions (FAQ)

Q: Can the DMS2085LSD-13 be used as a direct replacement for the NTMSD3P102R2 in existing designs?

A: Yes. Both devices share identical package geometry (8-SOIC), matching Rds On specifications (85 mOhm @ 3.05A, 10V), and equivalent electrical ratings (20V Vdss, P-Channel topology). PCB layout and schematic integration require no modification.

Q: What is the primary reason for substitution?

A: The NTMSD3P102R2 is classified as obsolete. The DMS2085LSD-13 provides equivalent functionality with active product status, ensuring long-term availability and supply chain continuity.

Q: Are there differences in gate charge between these devices?

A: Yes. The DMS2085LSD-13 exhibits lower gate charge (7.8 nC @ 10V) compared to the NTMSD3P102R2 (25 nC @ 10V). This reduction decreases switching losses and improves efficiency in gate-driven applications, representing a performance enhancement.

Q: Do both devices support the same operating temperature range?

A: Yes. Both the NTMSD3P102R2 and DMS2085LSD-13 operate across the identical temperature range of -55°C to 150°C (TJ).

Q: What is the difference in continuous drain current rating?

A: The DMS2085LSD-13 is rated for 3.3A continuous drain current at 25°C, compared to 2.34A for the NTMSD3P102R2. This higher rating provides additional design margin and thermal headroom for applications operating near maximum current limits.

Q: Are there compliance differences between these parts?

A: Yes. The DMS2085LSD-13 is ROHS3 compliant with active product status. The NTMSD3P102R2 is RoHS non-compliant and obsolete. For new designs and production requiring regulatory compliance, the DMS2085LSD-13 is the appropriate selection.

Q: Is the packaging identical between both devices?

A: Yes. Both devices are housed in 8-SOIC packages with identical dimensions (0.154", 3.90mm Width). No PCB layout modifications are required for substitution.

Q: What is the input capacitance difference?

A: The DMS2085LSD-13 has lower input capacitance (353 pF @ 15V) compared to the NTMSD3P102R2 (750 pF @ 16V). Lower capacitance reduces gate drive requirements and improves switching speed.