NTMS7N03R2 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The NTMS7N03R2 is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 4.8A continuous drain current at 25°C. The device is housed in an 8-SOIC surface mount package and dissipates a maximum of 800mW. This part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while accommodating modern component availability and compliance requirements.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	4.8	A
Rds On (Max) @ 7A, 10V	23	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	3	V
Power Dissipation (Max)	800	mW
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package	8-SOIC	—

Substitute Part Grouping Explanation

Substitution of the NTMS7N03R2 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

FET Type: N-Channel topology
Technology: MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss): Minimum 30V rating required
Continuous Drain Current (Id): Minimum 4.8A at 25°C
On-State Resistance (Rds On): Maximum 23mOhm at specified gate voltage
Gate Threshold Voltage (Vgs(th)): Maximum 3V at 250µA
Power Dissipation: Minimum 800mW capability
Operating Temperature: -55°C to 150°C minimum range
Mounting Type: Surface Mount
Package: 8-SOIC form factor

Direct Equivalent Classification: NTMS7N03R2G is a direct equivalent manufactured by onsemi with identical electrical specifications and package configuration. This part represents the active production successor to the obsolete NTMS7N03R2.

Similar Substitute Classification: DMG4496SSS-13 and FDS4672A are similar substitutes that exceed the minimum electrical requirements of the NTMS7N03R2. These parts maintain N-Channel MOSFET topology, surface mount 8-SOIC packaging, and compatible gate drive characteristics while offering enhanced current handling and thermal performance.

Parameter Comparison

Parameter	NTMS7N03R2 (Main)	NTMS7N03R2G (Direct)	DMG4496SSS-13 (Similar)	FDS4672A (Similar)
Manufacturer	onsemi	onsemi	Diodes Incorporated	onsemi
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET	MOSFET	MOSFET	MOSFET
Vdss (V)	30	30	30	40
Id @ 25°C (A)	4.8	4.8	10	11
Rds On (Max) (mOhm)	23 @ 7A, 10V	23 @ 7A, 10V	21.5 @ 10A, 10V	13 @ 11A, 4.5V
Vgs(th) (Max) @ 250µA (V)	3	3	2	2
Power Dissipation (Max) (W)	0.8	0.8	1.42	2.5
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 175
Package	8-SOIC	8-SOIC	8-SOIC	8-SOIC
Product Status	Obsolete	Active	Active	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

NTMS7N03R2G (Direct Equivalent - Recommended Primary Choice)

The NTMS7N03R2G is the recommended substitute for the obsolete NTMS7N03R2. This part is manufactured by onsemi and provides identical electrical specifications and package configuration. The NTMS7N03R2G is in active production status with 19,243 pieces in stock inventory. This part achieves ROHS3 compliance, addressing regulatory requirements that the original NTMS7N03R2 does not meet. Pin-for-pin compatibility and electrical equivalence ensure direct replacement without circuit modification.

DMG4496SSS-13 (Similar Substitute - Enhanced Performance)

The DMG4496SSS-13 manufactured by Diodes Incorporated is a similar substitute suitable for applications where the NTMS7N03R2G is unavailable. This part maintains the 30V Vdss rating and 8-SOIC package form factor. The DMG4496SSS-13 provides higher continuous drain current (10A versus 4.8A) and improved on-state resistance (21.5mOhm), delivering enhanced thermal performance. The part is ROHS3 compliant and in active production with 18,492 pieces in stock. Gate threshold voltage is lower (2V maximum), requiring verification of gate drive circuit compatibility.

FDS4672A (Similar Substitute - Maximum Performance)

The FDS4672A manufactured by onsemi is a similar substitute offering the highest performance envelope among available options. This part features a 40V Vdss rating, 11A continuous drain current, and 2.5W power dissipation capability. The FDS4672A is part of the PowerTrench® series and provides superior thermal characteristics. The part is ROHS3 compliant and in active production with 7,991 pieces in stock. The higher Vdss rating and enhanced current handling make this part suitable for applications requiring design margin or future performance scaling. Gate threshold voltage is 2V maximum, and maximum gate voltage is ±12V, requiring circuit verification.

Frequently Asked Questions (FAQ)

Q: Can NTMS7N03R2G be used as a direct replacement for NTMS7N03R2?

A: Yes. The NTMS7N03R2G is a direct equivalent with identical electrical specifications, gate drive requirements, and 8-SOIC package configuration. No circuit modifications are required. The primary difference is product status (active versus obsolete) and RoHS compliance (ROHS3 compliant versus non-compliant).

Q: What are the key differences between the direct equivalent and similar substitutes?

A: The NTMS7N03R2G maintains identical electrical specifications to the original part. The DMG4496SSS-13 and FDS4672A exceed the minimum electrical requirements, offering higher current ratings and improved thermal performance. These similar substitutes require verification of gate drive circuit compatibility due to lower gate threshold voltages (2V versus 3V maximum).

Q: Are all substitute parts available in the same 8-SOIC package?

A: Yes. All substitute parts are housed in 8-SOIC surface mount packages with identical physical dimensions (0.154" width, 3.90mm). PCB layout and footprints are compatible across all listed parts.

Q: What is the impact of lower gate threshold voltage in the similar substitutes?

A: The DMG4496SSS-13 and FDS4672A have maximum gate threshold voltages of 2V compared to 3V for the NTMS7N03R2. This means these parts turn on at lower gate voltages. Gate drive circuits must be verified to ensure adequate voltage margin and switching performance. Consult device datasheets for gate drive voltage recommendations.

Q: Are all substitute parts RoHS compliant?

A: The NTMS7N03R2G, DMG4496SSS-13, and FDS4672A are all ROHS3 compliant. The original NTMS7N03R2 is RoHS non-compliant. RoHS compliance is required for many applications and regulatory jurisdictions.

Q: Which substitute part should be selected for new designs?

A: For new designs, the NTMS7N03R2G is the recommended choice due to electrical equivalence and active production status. If enhanced performance or design margin is required, the DMG4496SSS-13 or FDS4672A provide higher current ratings and thermal capabilities. All three parts are in active production with adequate inventory.

Q: What is the operating temperature range for each substitute?

A: The NTMS7N03R2 and NTMS7N03R2G operate from -55°C to 150°C (TJ). The DMG4496SSS-13 operates from -55°C to 150°C (TJ). The FDS4672A operates from -55°C to 175°C (TJ), providing extended high-temperature capability.

Q: Can the similar substitutes be used in applications designed for the NTMS7N03R2?

A: Yes, with verification. The DMG4496SSS-13 and FDS4672A exceed the electrical requirements of the NTMS7N03R2 and are suitable for the same applications. Gate drive circuit compatibility must be verified due to lower gate threshold voltages. The higher current ratings and thermal performance of these parts provide design margin and reliability enhancement.

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