NTMS5P02R2G P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The NTMS5P02R2G is an active P-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by onsemi. This surface mount device is rated for 20V drain-to-source voltage with a continuous drain current of 3.95A at 25°C and maximum power dissipation of 790mW. The component is packaged in an 8-SOIC configuration and is ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating.

Equivalent and substitute parts are identified when design requirements permit higher voltage ratings, increased current capacity, or enhanced thermal performance while maintaining functional compatibility through common package types and operating temperature ranges.

Substiute Parts

NTMS5P02R2G
onsemiIn Stock: 18767NTMS5P02R2G Datasheet
NTMS5P02R2G
Current Part
AO4419
Alpha & Omega Semiconductor Inc.In Stock: 150171AO4419 Datasheet
AO4419
Similar
PJL9411_R2_00001
Panjit International Inc.In Stock: 3416PJL9411_R2_00001 Datasheet
PJL9411_R2_00001
Similar

Key Parameters

Parameter NTMS5P02R2G
Manufacturer onsemi
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Continuous Drain Current (Id) @ 25°C 3.95A
Rds On (Max) @ Id, Vgs 33mOhm @ 5.4A, 4.5V
Gate Threshold Voltage (Vgs(th)) @ Id 1.25V @ 250µA
Gate Charge (Qg) @ Vgs 35 nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1900 pF @ 16V
Power Dissipation (Max) 790mW
Operating Temperature Range -55°C to 150°C
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
RoHS Status ROHS3 Compliant
MSL Rating 1 (Unlimited)
Product Status Active

Substitute Part Grouping Explanation

Substitute parts for the NTMS5P02R2G are qualified based on the following substitution criteria:

Primary Compatibility Requirements:

  • FET Type: P-Channel configuration
  • Technology: MOSFET (Metal Oxide)
  • Mounting Type: Surface Mount
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package Type: 8-SOIC or 8-SOP (mechanically compatible)
  • Regulatory Compliance: ROHS3 Compliant, REACH Unaffected

Allowable Parameter Variations:

  • Drain to Source Voltage (Vdss): Equal to or greater than 20V
  • Continuous Drain Current (Id): Equal to or greater than 3.95A
  • Power Dissipation: Equal to or greater than 790mW
  • Gate Charge (Qg): No upper limit restriction
  • Input Capacitance (Ciss): No upper limit restriction
  • Rds On: Lower values are acceptable (improved performance)

Substitutes are identified where higher voltage ratings, increased current capacity, or improved thermal characteristics are available within the same package family, allowing direct replacement in applications where the original part specifications are met or exceeded.

Parameter Comparison

Parameter NTMS5P02R2G (onsemi) AO4419 (Alpha & Omega) PJL9411_R2_00001 (Panjit)
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V 30V 30V
Continuous Drain Current (Id) @ 25°C 3.95A 9.7A 8.4A
Rds On (Max) @ Id, Vgs 33mOhm @ 5.4A, 4.5V 20mOhm @ 9.7A, 10V 20mOhm @ 8.4A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id 1.25V @ 250µA 2.7V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) @ Vgs 35 nC @ 4.5V 32 nC @ 10V 11 nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1900 pF @ 16V 1900 pF @ 15V 1169 pF @ 15V
Power Dissipation (Max) 790mW 3.1W 1.7W
Operating Temperature Range -55°C to 150°C -55°C to 150°C -55°C to 150°C
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC 8-SOIC 8-SOIC / 8-SOP
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Product Status Active Active Active

Engineering Selection Recommendations

AO4419 (Alpha & Omega Semiconductor Inc.)

The AO4419 is a direct substitute for applications requiring enhanced performance margins. This device provides 30V Vdss rating (50% higher than NTMS5P02R2G), 9.7A continuous drain current (145% higher), and 3.1W power dissipation (292% higher). The AO4419 maintains identical 8-SOIC package geometry, ROHS3 compliance, and -55°C to 150°C operating temperature range. Lower on-resistance (20mOhm vs. 33mOhm) reduces conduction losses. This substitute is suitable for designs where higher voltage transients or increased current demands may occur, or where thermal headroom is required.

PJL9411_R2_00001 (Panjit International Inc.)

The PJL9411_R2_00001 is a substitute for applications prioritizing reduced gate charge and input capacitance. This device provides 30V Vdss rating, 8.4A continuous drain current (112% higher), and 1.7W power dissipation (115% higher). The PJL9411_R2_00001 features significantly lower gate charge (11 nC vs. 35 nC) and input capacitance (1169 pF vs. 1900 pF), enabling faster switching characteristics. The device is packaged in 8-SOP configuration (mechanically compatible with 8-SOIC footprint), maintains ROHS3 compliance, and operates across the same temperature range. This substitute is applicable where switching speed optimization or reduced driver power consumption is required.

All substitute parts maintain active product status and full regulatory compliance (ROHS3, REACH Unaffected, EAR99 ECCN classification).

Frequently Asked Questions (FAQ)

Q: Can the AO4419 be used as a direct replacement for the NTMS5P02R2G in all applications?

A: The AO4419 is electrically compatible as a substitute where the circuit design permits higher voltage ratings (30V vs. 20V) and increased current capacity (9.7A vs. 3.95A). Both devices share identical 8-SOIC package geometry and operating temperature range (-55°C to 150°C). Verification of circuit voltage transient levels and thermal management is required to confirm suitability.

Q: What is the primary difference between the AO4419 and PJL9411_R2_00001 substitutes?

A: The AO4419 provides higher current capacity (9.7A vs. 8.4A) and power dissipation rating (3.1W vs. 1.7W), making it suitable for high-current applications. The PJL9411_R2_00001 features significantly lower gate charge (11 nC vs. 32 nC) and input capacitance (1169 pF vs. 1900 pF), enabling faster switching and reduced driver power requirements. Both provide 30V Vdss rating and 20mOhm on-resistance.

Q: Are the package types of all three devices identical?

A: The NTMS5P02R2G and AO4419 are packaged in 8-SOIC. The PJL9411_R2_00001 is packaged in 8-SOP, which is mechanically compatible with 8-SOIC footprints. Pin configurations and lead spacing are equivalent, allowing PCB footprint compatibility.

Q: What compliance certifications apply to all substitute parts?

A: All three devices (NTMS5P02R2G, AO4419, and PJL9411_R2_00001) are ROHS3 compliant and REACH unaffected. All are classified under ECCN EAR99 for export control purposes.

Q: Does the NTMS5P02R2G have a lower gate charge than the substitute parts?

A: The NTMS5P02R2G has a gate charge of 35 nC @ 4.5V. The AO4419 has 32 nC @ 10V, and the PJL9411_R2_00001 has 11 nC @ 4.5V. The PJL9411_R2_00001 provides the lowest gate charge specification, resulting in faster switching characteristics and reduced driver power consumption.

Q: Can these substitutes be used in circuits designed for 20V maximum voltage?

A: Yes. The AO4419 and PJL9411_R2_00001 are rated for 30V Vdss, which exceeds the 20V requirement of the original NTMS5P02R2G. Higher voltage ratings provide additional safety margin against transient overvoltage conditions. Circuit operation at 20V is within the specified operating range of all substitute devices.

Q: What is the moisture sensitivity level (MSL) rating for the substitute parts?

A: The NTMS5P02R2G has MSL 1 (Unlimited). The AO4419 has MSL 1 (Unlimited). The PJL9411_R2_00001 has MSL Not Applicable. All devices are suitable for standard PCB assembly and storage conditions without special moisture control requirements.

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