NTMS4176PR2G Equivalent & Substitute Parts

Part Overview

The NTMS4176PR2G is a P-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with 5.5A continuous drain current at 25°C. This device is packaged in an 8-SOIC surface mount configuration and is designed for general-purpose switching applications requiring moderate current handling in compact form factors. The part is currently listed as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and production requirements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	5.5	A
On-Resistance (Rds On) @ 10V	18	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.5	V
Maximum Gate Voltage (Vgs)	±25	V
Power Dissipation (Max)	810	mW
Operating Temperature Range	-55 to 150	°C
Package Type	8-SOIC	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the NTMS4176PR2G is determined by the following critical parameters: drain-to-source voltage rating (Vdss), continuous drain current capability (Id), on-resistance characteristics (Rds On), gate threshold voltage (Vgs(th)), maximum gate voltage (Vgs), power dissipation rating, operating temperature range, and package compatibility.

Substitute parts must maintain electrical compatibility across these parameters to ensure functional equivalence in circuit applications. The 8-SOIC package footprint is a primary mechanical constraint for direct board-level substitution. Parts with identical or superior electrical ratings within the same package family are classified as direct substitutes. Parts with enhanced current ratings or reduced on-resistance may be used in applications where the original part's specifications are met or exceeded, provided all other parameters remain compatible.

Parameter Comparison

Parameter	NTMS4176PR2G	NTMS4177PR2G	FDS6681Z	RS3E075ATTB
Manufacturer	onsemi	onsemi	onsemi	Rohm Semiconductor
Vdss (V)	30	30	30	30
Id @ 25°C (A)	5.5	6.6	20	—
Rds On @ 10V (mOhm)	18	12	4.6	23.5
Vgs(th) @ 250µA (V)	2.5	2.5	3	2.5
Vgs (Max) (±V)	25	20	25	20
Power Dissipation (Max) (mW)	810	840	2500	2000
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	—
Package	8-SOIC	8-SOIC	8-SOIC	8-SOP-J
Product Status	Obsolete	Active	Active	Not For New Designs
RoHS Status	—	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

NTMS4177PR2G is the primary substitute for the NTMS4176PR2G. Both devices are manufactured by onsemi, share identical Vdss (30V) and Vgs(th) (2.5V @ 250µA) specifications, and are packaged in 8-SOIC. The NTMS4177PR2G provides 6.6A continuous drain current compared to 5.5A in the original part, with improved on-resistance of 12mOhm versus 18mOhm. The NTMS4177PR2G is currently in active production status with ROHS3 compliance, making it the recommended choice for new designs and production continuity.

FDS6681Z is an alternative substitute offering significantly enhanced performance characteristics. This onsemi PowerTrench® series device maintains 30V Vdss rating but provides 20A continuous drain current and 4.6mOhm on-resistance, representing a substantial improvement in current handling and efficiency. The FDS6681Z is suitable for applications requiring higher current capacity within the same voltage class and package footprint. This part is in active production with ROHS3 compliance and extensive inventory availability.

RS3E075ATTB is a Rohm Semiconductor alternative with 30V Vdss rating and 2W power dissipation capability. This part is packaged in 8-SOP-J, which maintains mechanical compatibility with 8-SOIC footprints. However, the RS3E075ATTB is designated as "Not For New Designs" and should be reserved for legacy system support only. The continuous drain current specification is not provided for this device, limiting its applicability for new applications.

For new designs and production applications, NTMS4177PR2G is the preferred substitute. For applications requiring enhanced current handling, FDS6681Z provides superior performance within the same package family. The RS3E075ATTB should be avoided for new designs due to its obsolescence status.

Frequently Asked Questions (FAQ)

Q: Can the NTMS4177PR2G directly replace the NTMS4176PR2G in existing circuits?

A: Yes. Both devices share identical Vdss (30V), Vgs(th) (2.5V), and package configuration (8-SOIC). The NTMS4177PR2G provides higher continuous drain current (6.6A vs. 5.5A) and lower on-resistance (12mOhm vs. 18mOhm), making it a direct functional upgrade with no circuit modifications required.

Q: What are the key differences between NTMS4177PR2G and FDS6681Z?

A: Both are onsemi P-Channel MOSFETs with 30V Vdss rating in 8-SOIC packages. The FDS6681Z is a PowerTrench® series device offering significantly higher current capacity (20A vs. 6.6A) and lower on-resistance (4.6mOhm vs. 12mOhm). Selection depends on application current requirements. The FDS6681Z is suitable for high-current switching applications, while the NTMS4177PR2G is appropriate for moderate-current designs.

Q: Is the RS3E075ATTB suitable for new product designs?

A: No. The RS3E075ATTB is designated as "Not For New Designs" by Rohm Semiconductor. This part should be used only for legacy system maintenance and repair. For all new designs, select either NTMS4177PR2G or FDS6681Z.

Q: Are all substitute parts available in the same package footprint?

A: NTMS4177PR2G and FDS6681Z are both packaged in 8-SOIC, providing identical footprint compatibility. The RS3E075ATTB uses 8-SOP-J packaging, which maintains mechanical compatibility with 8-SOIC but represents a different package designation. Verify PCB layout compatibility before selecting RS3E075ATTB for legacy applications.

Q: What is the maximum gate voltage difference between substitute parts?

A: The NTMS4176PR2G and FDS6681Z support ±25V maximum gate voltage, while NTMS4177PR2G and RS3E075ATTB support ±20V. Circuits designed for ±25V gate drive must use either the original part or FDS6681Z. Circuits operating at ±20V or lower are compatible with all substitute options.

Q: How do power dissipation ratings compare across substitute parts?

A: The NTMS4176PR2G is rated for 810mW, NTMS4177PR2G for 840mW, FDS6681Z for 2500mW, and RS3E075ATTB for 2000mW. Higher power dissipation ratings indicate greater thermal capacity. Applications with stringent thermal constraints should verify that selected substitutes meet or exceed the original part's power dissipation specification.

Q: Are all substitute parts RoHS compliant?

A: NTMS4177PR2G and FDS6681Z are ROHS3 compliant. RS3E075ATTB is also ROHS3 compliant. The original NTMS4176PR2G RoHS status is not specified in the provided data. Verify RoHS compliance requirements for your specific application and regulatory jurisdiction.

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