NTMFS5113PLT1G Equivalent & Substitute Parts

Part Overview

The NTMFS5113PLT1G is a P-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with continuous drain current of 10A (Ta) and 64A (Tc). This device is packaged in a 5-DFN (5x6) surface mount configuration and is classified as Active product status. The part is ROHS3 compliant with AEC-Q101 automotive qualification available in equivalent variants. Substitute parts are identified when equivalent electrical performance, package compatibility, and thermal characteristics align with the original specification, enabling direct replacement in circuit applications.

Substiute Parts

NTMFS5113PLT1G
onsemiIn Stock: 837NTMFS5113PLT1G Datasheet
NTMFS5113PLT1G
Current Part
NVMFS5113PLT1G
onsemiIn Stock: 35245NVMFS5113PLT1G Datasheet
NVMFS5113PLT1G
Parametric Equivalent
NVMFS5113PLWFT1G
onsemiIn Stock: 1881NVMFS5113PLWFT1G Datasheet
NVMFS5113PLWFT1G
Parametric Equivalent
RS1L151ATTB1
Rohm SemiconductorIn Stock: 11649RS1L151ATTB1 Datasheet
RS1L151ATTB1
Similar

Key Parameters

Parameter Value Unit
FET Type P-Channel
Drain to Source Voltage (Vdss) 60 V
Continuous Drain Current @ 25°C (Ta) 10 A
Continuous Drain Current @ 25°C (Tc) 64 A
Rds On (Max) @ 17A, 10V 14 mOhm
Vgs(th) (Max) @ 250µA 2.5 V
Gate Charge (Qg) @ 10V 83 nC
Input Capacitance (Ciss) @ 25V 4400 pF
Power Dissipation (Ta) 3.8 W
Power Dissipation (Tc) 150 W
Operating Temperature Range -55 to 175 °C
Package Type 8-PowerTDFN, 5 Leads
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the NTMFS5113PLT1G are identified based on electrical parameter equivalence and package compatibility. The substitution logic is structured as follows:

Parametric Equivalents (Direct Substitutes): Parts that maintain identical electrical specifications across all critical parameters including Vdss (60V), continuous drain current (10A Ta / 64A Tc), Rds On (14 mOhm @ 17A, 10V), Vgs(th) (2.5V @ 250µA), gate charge (83 nC @ 10V), input capacitance (4400 pF @ 25V), and power dissipation ratings (3.8W Ta / 150W Tc). These parts are housed in the same 8-PowerTDFN, 5-lead package and operate across the identical temperature range (-55°C to 175°C). Parametric equivalents differ only in packaging format (Tape & Reel versus Cut Tape) or qualification grade (automotive-qualified variants).

Similar Substitutes (Cross-Functional Alternatives): Parts that share the same FET type (P-Channel), voltage rating (60V Vdss), and general application class but may exhibit variations in continuous drain current, on-resistance, gate charge, or package configuration. These parts are suitable for applications where the original specification allows for performance trade-offs or where package footprint differences are acceptable.

Parameter Comparison

Parameter NTMFS5113PLT1G NVMFS5113PLT1G NVMFS5113PLWFT1G RS1L151ATTB1
Manufacturer onsemi onsemi onsemi Rohm Semiconductor
FET Type P-Channel P-Channel P-Channel P-Channel
Vdss 60 V 60 V 60 V 60 V
Continuous Drain Current (Ta) 10 A 10 A 10 A
Continuous Drain Current (Tc) 64 A 64 A 64 A 56 A
Rds On (Max) @ Specified Conditions 14 mOhm @ 17A, 10V 14 mOhm @ 17A, 10V 14 mOhm @ 17A, 10V 11.3 mOhm @ 15A, 10V
Vgs(th) (Max) 2.5 V @ 250µA 2.5 V @ 250µA 2.5 V @ 250µA 2.5 V @ 1mA
Gate Charge (Qg) @ 10V 83 nC 83 nC 83 nC 130 nC
Input Capacitance (Ciss) 4400 pF @ 25V 4400 pF @ 25V 4400 pF @ 25V 6900 pF @ 30V
Power Dissipation (Ta) 3.8 W 3.8 W 3.8 W 3 W
Power Dissipation (Tc) 150 W 150 W 150 W
Operating Temperature Range -55 to 175 °C -55 to 175 °C -55 to 175 °C Up to 150 °C
Package Type 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-HSOP
Packaging Format Tape & Reel (TR) Cut Tape (CT) & Digi-Reel® Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Active Active Active
Grade Automotive Automotive
Qualification AEC-Q101 AEC-Q101
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

NVMFS5113PLT1G: This part is a parametric equivalent to the NTMFS5113PLT1G with identical electrical specifications and package configuration. The NVMFS5113PLT1G carries automotive-grade qualification (AEC-Q101) and is available in Cut Tape and Digi-Reel packaging formats. Selection of this part is appropriate for applications requiring automotive-qualified components or when Cut Tape packaging is preferred. All electrical parameters, thermal characteristics, and compliance certifications (ROHS3, REACH Unaffected) are equivalent to the original part.

NVMFS5113PLWFT1G: This part is a parametric equivalent to the NTMFS5113PLT1G with identical electrical specifications and package configuration. The NVMFS5113PLWFT1G carries automotive-grade qualification (AEC-Q101) and is supplied in Tape & Reel packaging. Selection of this part is appropriate for applications requiring automotive-qualified components or when Tape & Reel packaging is the specified delivery format. All electrical parameters, thermal characteristics, and compliance certifications (ROHS3, REACH Unaffected) are equivalent to the original part.

RS1L151ATTB1: This part is a similar substitute manufactured by Rohm Semiconductor with the same 60V Vdss rating and P-Channel configuration. The RS1L151ATTB1 exhibits lower on-resistance (11.3 mOhm @ 15A, 10V versus 14 mOhm @ 17A, 10V) and higher continuous drain current at case temperature (56A Tc versus 64A Tc). Gate charge is higher (130 nC @ 10V versus 83 nC @ 10V) and input capacitance is higher (6900 pF @ 30V versus 4400 pF @ 25V). The package type is 8-HSOP, which differs from the 8-PowerTDFN footprint of the original part. Operating temperature range extends to 150°C maximum junction temperature. Selection of this part requires verification of PCB layout compatibility due to package footprint differences and evaluation of switching performance impact due to increased gate charge and capacitance.

Frequently Asked Questions (FAQ)

Q: Can NVMFS5113PLT1G and NVMFS5113PLWFT1G be used interchangeably with NTMFS5113PLT1G?

A: Yes. Both NVMFS5113PLT1G and NVMFS5113PLWFT1G are parametric equivalents with identical electrical specifications, package configuration (8-PowerTDFN, 5 Leads), and thermal ratings. The differences are packaging format (Cut Tape versus Tape & Reel) and automotive qualification grade (AEC-Q101). Direct substitution is supported at the circuit level.

Q: What are the key differences between the onsemi NTMFS5113 variants and the Rohm RS1L151ATTB1?

A: The primary differences are: (1) On-resistance is lower in the RS1L151ATTB1 (11.3 mOhm versus 14 mOhm), (2) Continuous drain current at case temperature is lower in the RS1L151ATTB1 (56A versus 64A), (3) Gate charge is higher in the RS1L151ATTB1 (130 nC versus 83 nC), (4) Input capacitance is higher in the RS1L151ATTB1 (6900 pF versus 4400 pF), and (5) Package type differs (8-HSOP versus 8-PowerTDFN). These differences affect switching speed, thermal performance, and PCB layout requirements.

Q: Is the RS1L151ATTB1 a direct pin-for-pin replacement?

A: No. While both devices are P-Channel MOSFETs with 60V Vdss rating, the RS1L151ATTB1 uses an 8-HSOP package whereas the NTMFS5113PLT1G uses an 8-PowerTDFN package. Pin configurations and PCB footprints differ. PCB layout redesign is required for substitution.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. NTMFS5113PLT1G, NVMFS5113PLT1G, NVMFS5113PLWFT1G, and RS1L151ATTB1 are all ROHS3 compliant with Moisture Sensitivity Level 1 (Unlimited). All parts are REACH Unaffected.

Q: Which substitute part is recommended for automotive applications?

A: NVMFS5113PLT1G and NVMFS5113PLWFT1G both carry AEC-Q101 automotive qualification. These parts are suitable for automotive-grade applications. The original NTMFS5113PLT1G does not specify automotive qualification. RS1L151ATTB1 does not specify automotive qualification.

Q: What is the impact of higher gate charge in the RS1L151ATTB1?

A: Higher gate charge (130 nC versus 83 nC) increases the energy required to switch the device and extends switching time. This affects gate driver design, switching losses, and overall circuit efficiency. Applications with tight switching speed requirements or high-frequency operation may experience performance degradation.

Q: Can packaging format differences affect circuit performance?

A: Packaging format (Tape & Reel versus Cut Tape) does not affect electrical performance or circuit operation. Format differences relate only to component delivery and handling. Tape & Reel and Cut Tape variants of the same part number are electrically and mechanically identical.

Q: What is the maximum operating temperature for each substitute?

A: NTMFS5113PLT1G, NVMFS5113PLT1G, and NVMFS5113PLWFT1G all operate to 175°C junction temperature. RS1L151ATTB1 operates to 150°C junction temperature maximum. Applications requiring operation above 150°C require use of the onsemi variants.

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