NTMFS4985NFT3G Equivalent & Substitute Parts

Part Overview

The NTMFS4985NFT3G is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with continuous drain current of 17.5A at Ta and 65A at Tc. This device is packaged in a 5-DFN (5x6) surface mount configuration and is classified as obsolete. Due to its obsolete product status, identifying equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for production and repair applications.

Substiute Parts

NTMFS4985NFT3G

onsemiIn Stock: 22758NTMFS4985NFT3G Datasheet

Current PartRFQ

NTMFS4985NFT1G

onsemiIn Stock: 111605NTMFS4985NFT1G Datasheet

Parametric EquivalentRFQ

BSC034N03LSGATMA1

Infineon TechnologiesIn Stock: 868BSC034N03LSGATMA1 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the NTMFS4985NFT3G is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

• Drain to Source Voltage (Vdss): Must equal or exceed 30V
• Rds On (Max) @ specified Id and Vgs: Must not exceed 3.4 mOhm @ 30A, 10V
• Gate Threshold Voltage (Vgs(th)): Must be within acceptable switching range
• Operating Temperature Range: Must support -55°C to 150°C
• FET Type: N-Channel MOSFET technology

Mechanical Compatibility Criteria:

• Mounting Type: Surface Mount
• Package Configuration: 8-PowerTDFN, 5 Leads or equivalent footprint
• Lead Count: 5 leads

Compliance Criteria:

• RoHS3 Compliance required
• Moisture Sensitivity Level: 1 (Unlimited)

Substitute parts are grouped into two categories: parametric equivalents (identical electrical specifications and packaging) and similar alternatives (equivalent voltage and current ratings with enhanced performance characteristics).

Parameter Comparison

Engineering Selection Recommendations

NTMFS4985NFT1G (onsemi)

This part is a parametric equivalent to the NTMFS4985NFT3G. Both devices share identical electrical specifications, including Vdss, Rds On, gate charge, and input capacitance. The primary difference is packaging format: NTMFS4985NFT1G is supplied in Cut Tape (CT) configuration versus the original part's standard packaging. Both parts are classified as obsolete and maintain ROHS3 compliance and MSL 1 rating. This substitute is suitable for direct replacement in applications where the original part is no longer available, with no circuit redesign required.

BSC034N03LSGATMA1 (Infineon Technologies)

This part is a similar alternative with enhanced performance characteristics. It maintains the same 30V Vdss rating and 3.4 mOhm Rds On specification, ensuring electrical compatibility at the critical switching parameters. The BSC034N03LSGATMA1 offers higher continuous drain current ratings (22A at Ta, 100A at Tc) and increased power dissipation capability (2.5W at Ta, 57W at Tc), providing design margin for thermal management. Gate charge is higher at 52 nC versus 30.5 nC, and input capacitance is increased to 4300 pF. The device is classified as active product status, ensuring long-term availability. All compliance requirements (ROHS3, MSL 1) are met. This substitute is appropriate for applications requiring enhanced current handling or thermal performance while maintaining the same voltage class and switching characteristics.

Frequently Asked Questions (FAQ)

Q: Can NTMFS4985NFT1G be used as a direct replacement for NTMFS4985NFT3G?

A: Yes. Both parts are parametric equivalents with identical electrical specifications (Vdss, Id, Rds On, Vgs(th), gate charge, and input capacitance). The difference is packaging format (Cut Tape versus standard). No circuit modifications are required for substitution.

Q: What are the key differences between NTMFS4985NFT3G and BSC034N03LSGATMA1?

A: Both devices share the same 30V Vdss rating and 3.4 mOhm Rds On specification. The BSC034N03LSGATMA1 provides higher continuous drain current (22A at Ta versus 17.5A, and 100A at Tc versus 65A) and greater power dissipation capability. Gate charge and input capacitance are higher in the Infineon device. The BSC034N03LSGATMA1 is active product status, while both onsemi parts are obsolete.

Q: Are all three parts pin-compatible?

A: All three parts use 8-PowerTDFN packaging with 5 leads and are surface mount devices. Pin compatibility is maintained across all three devices for standard PCB layouts.

Q: Do all substitute parts meet the same compliance requirements?

A: Yes. All three parts are ROHS3 compliant, have MSL 1 (Unlimited) rating, and support the same operating temperature range of -55°C to 150°C. REACH status is unaffected for all devices.

Q: Which substitute should be selected for new designs?

A: For new designs, BSC034N03LSGATMA1 is recommended due to its active product status, ensuring long-term availability and supply chain stability. The enhanced current and thermal ratings provide additional design margin.

Q: Can BSC034N03LSGATMA1 be used in existing designs without circuit modification?

A: Yes, provided the application does not depend on the lower gate charge or input capacitance of the original part. The higher Qg (52 nC versus 30.5 nC) and Ciss (4300 pF versus 2100 pF) may affect gate drive timing in high-frequency switching applications. Verification of gate drive circuit performance is necessary if switching frequency exceeds 1 MHz.

Q: What is the inventory status of these parts?

A: NTMFS4985NFT3G has 22,700 units in stock. NTMFS4985NFT1G has 111,580 units in stock. BSC034N03LSGATMA1 has 786 units in stock. Availability should be confirmed with the supplier for production quantities.