NTMFS4841NT1G Equivalent & Substitute Parts Reference

Part Overview

The NTMFS4841NT1G is an N-Channel MOSFET from onsemi, categorized under Transistors, FETs, MOSFETs. It offers a drain-to-source voltage (Vdss) of 30V and a maximum continuous drain current of 8.3A (Ta) and 57A (Tc), housed in a 5-DFN (5x6) (8-SOFL) surface-mount package. The part has been designated as obsolete, making it necessary to identify alternative models that match its key electrical and mechanical parameters for continued design support and manufacturing.

Key Parameters

Parameter	NTMFS4841NT1G
Manufacturer	onsemi
Category	Transistors, FETs, MOSFETs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	8.3A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs	7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1436 pF @ 12 V
Power Dissipation (Max)	870mW (Ta), 41.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	5-DFN (5x6) (8-SOFL)
Package / Case	8-PowerTDFN, 5 Leads
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected

Substitute Part Grouping Explanation

Substitution eligibility is determined strictly by matching the following parameters: N-channel MOSFET type, MOSFET technology, identical drain-to-source voltage (30V), similar or higher current carrying capability, comparable Rds(on) values, gate threshold voltage (Vgs(th)), maximum gate charge (Qg), maximum Vgs, input capacitance (Ciss), power dissipation ratings, and mounting/package compatibility. Compliance and environmental status equivalence (RoHS, REACH) are also considered critical.

Parameter Comparison

Parameter	NTMFS4841NT1G (onsemi)	PSMN6R0-30YL,115 (Nexperia USA Inc.)	PSMN7R0-30YL,115 (Nexperia USA Inc.)
Category	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs	Transistors, FETs, MOSFETs
FET Type	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V	30 V	30 V
Current - Continuous Drain (Id) @ 25°C	8.3A (Ta), 57A (Tc)	79A (Tc)	76A (Tc)
Rds On (Max) @ Id, Vgs	7mOhm @ 30A, 10V	6mOhm @ 15A, 10V	7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA	2.15V @ 1mA	2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 4.5 V	24 nC @ 10 V	22 nC @ 10 V
Vgs (Max)	±20V	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	1436 pF @ 12 V	1425 pF @ 12 V	1270 pF @ 12 V
Power Dissipation (Max)	870mW (Ta), 41.7W (Tc)	55W (Tc)	51W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	5-DFN (5x6) (8-SOFL)	LFPAK56, Power-SO8	LFPAK56, Power-SO8
Package / Case	8-PowerTDFN, 5 Leads	SC-100, SOT-669	SC-100, SOT-669
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

All substitute parts listed (NTMFS4841NT1G, PSMN6R0-30YL,115, PSMN7R0-30YL,115) are ROHS3 compliant, REACH unaffected, and have a moisture sensitivity level of 1 (unlimited), with EAR99 export status. Product lifecycle status indicates that the main part is obsolete and alternative parts listed are not for new designs. Selection is driven by availability, regulatory compliance, and matching electrical and mechanical parameters.

Frequently Asked Questions (FAQ)

Q: What are the main criteria when selecting a substitute MOSFET for NTMFS4841NT1G?
A: Substitution is based strictly on matching FET type, technology, drain-to-source voltage, current capability, Rds(on), gate threshold and maximum gate voltage, power dissipation, input capacitance, and package type.

Q: Are the pinouts and footprints identical between NTMFS4841NT1G and the suggested substitutes?
A: The substitute parts use LFPAK56, Power-SO8 (SC-100, SOT-669) packages, while the NTMFS4841NT1G uses 5-DFN (5x6) (8-SOFL), 8-PowerTDFN package. Mechanical compatibility must be confirmed based on these package specifications.

Q: Are all listed substitute parts RoHS and REACH compliant?
A: Yes, all substitute and similar parts listed are ROHS3 compliant and REACH unaffected.

Q: Is the voltage or current rating for the substitute devices higher or lower?
A: Substitute parts have an equal drain-to-source voltage rating (30V) and higher or equal current rating (76A or 79A @ Tc).

Q: Do all substitute MOSFETs support surface-mount technology?
A: Yes, all substitutes are designed for surface-mount installation.

Q: How does the maximum operating temperature compare between the main and substitute parts?
A: Substitute parts offer a wider maximum temperature range (-55°C ~ 175°C) compared to the main part (-55°C ~ 150°C).

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