NTMFS4839NHT1G Equivalent & Substitute Parts

Part Overview

The NTMFS4839NHT1G is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with continuous drain current of 9.5A at Ta and 64A at Tc. The device is housed in a 5-DFN (5x6) surface mount package and features a maximum on-resistance of 5.5mOhm at 30A and 10V gate-source voltage. This part is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current @ Ta	9.5	A
Continuous Drain Current @ Tc	64	A
On-Resistance (Rds On Max) @ 30A, 10V	5.5	mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ 250µA	2.5	V
Gate Charge (Qg) @ 11.5V	43.5	nC
Input Capacitance (Ciss) @ 12V	2354	pF
Power Dissipation @ Ta	870	mW
Power Dissipation @ Tc	42.4	W
Operating Temperature Range	-55 to 150	°C
Package Type	5-DFN (5x6)	Surface Mount

Substitute Part Grouping Explanation

Substitution of the NTMFS4839NHT1G is determined by equivalence in the following critical parameters: drain-to-source voltage rating (Vdss), on-resistance characteristics (Rds On), gate-source threshold voltage (Vgs(th)), and operating temperature range. The substitute parts identified maintain the 30V Vdss rating and deliver comparable or superior on-resistance performance at specified gate-source voltages. Both substitute parts operate across the -55°C to 175°C temperature range, which encompasses the original part's -55°C to 150°C specification. Substitution is valid where continuous drain current capacity and power dissipation ratings meet or exceed application requirements. Package form factor differences are noted as these affect board layout and thermal management implementation.

Parameter Comparison

Parameter	NTMFS4839NHT1G (onsemi)	PSMN5R0-30YL,115 (Nexperia)	PSMN6R0-30YL,115 (Nexperia)	Unit
Drain-to-Source Voltage (Vdss)	30	30	30	V
Continuous Drain Current @ Tc	64	91	79	A
On-Resistance (Rds On Max)	5.5 @ 30A, 10V	5 @ 15A, 10V	6 @ 15A, 10V	mOhm
Gate-Source Threshold Voltage (Vgs(th))	2.5 @ 250µA	2.15 @ 1mA	2.15 @ 1mA	V
Gate Charge (Qg)	43.5 @ 11.5V	29 @ 10V	24 @ 10V	nC
Input Capacitance (Ciss)	2354 @ 12V	1760 @ 12V	1425 @ 12V	pF
Power Dissipation @ Tc	42.4	61	55	W
Operating Temperature Range	-55 to 150	-55 to 175	-55 to 175	°C
Package Type	5-DFN (5x6)	LFPAK56	LFPAK56	Surface Mount
Product Status	Obsolete	Not For New Designs	Not For New Designs	—
RoHS Status	REACH Unaffected	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

Both PSMN5R0-30YL,115 and PSMN6R0-30YL,115 from Nexperia USA Inc. serve as functional equivalents to the obsolete NTMFS4839NHT1G. The PSMN5R0-30YL,115 provides superior continuous drain current capacity at 91A (Tc) compared to the original 64A (Tc), with lower on-resistance of 5mOhm at 15A and 10V. The PSMN6R0-30YL,115 delivers 79A (Tc) continuous drain current with 6mOhm on-resistance at 15A and 10V. Both substitute parts feature reduced gate charge and input capacitance, resulting in faster switching characteristics. The Nexperia devices are ROHS3 compliant and rated for extended operating temperatures to 175°C, exceeding the original specification. Package transition from 5-DFN to LFPAK56 requires board layout modification but provides improved thermal performance through enhanced copper area contact. Selection between the two Nexperia alternatives depends on application current requirements and thermal management constraints.

Frequently Asked Questions (FAQ)

Q: Can PSMN5R0-30YL,115 or PSMN6R0-30YL,115 directly replace NTMFS4839NHT1G without circuit modification?

A: Both Nexperia parts maintain the 30V Vdss rating and deliver equivalent or superior on-resistance performance. Gate-source threshold voltages are comparable (2.15V versus 2.5V), ensuring compatible gate drive requirements. However, package geometry differs (LFPAK56 versus 5-DFN), requiring PCB layout redesign. Lower gate charge and input capacitance in the substitute parts may improve switching speed, which is beneficial in most applications but requires verification in timing-critical circuits.

Q: What are the key differences between PSMN5R0-30YL,115 and PSMN6R0-30YL,115?

A: The PSMN5R0-30YL,115 provides higher continuous drain current (91A at Tc) with lower on-resistance (5mOhm at 15A, 10V) and lower gate charge (29nC at 10V). The PSMN6R0-30YL,115 offers 79A continuous drain current with 6mOhm on-resistance and 24nC gate charge. Selection depends on application current demands and switching frequency requirements. Higher gate charge in the PSMN5R0 may increase driver power dissipation in high-frequency applications.

Q: How does the package change from 5-DFN to LFPAK56 affect thermal performance?

A: The LFPAK56 package provides significantly larger copper contact area for thermal dissipation compared to the 5-DFN form factor. This enables superior heat transfer to the PCB, supporting the higher power dissipation ratings of the substitute parts (61W and 55W at Tc versus 42.4W for the original). Thermal design must account for the different package footprint and copper area requirements.

Q: Are the substitute parts suitable for new design implementations?

A: Both PSMN5R0-30YL,115 and PSMN6R0-30YL,115 carry "Not For New Designs" status from Nexperia. These parts are appropriate for legacy system support and replacement applications where the original NTMFS4839NHT1G is no longer available. For new designs, consultation with component suppliers for current-generation alternatives is recommended.

Q: What compliance certifications apply to these substitute parts?

A: Both Nexperia substitute parts are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements. The original onsemi part carries REACH unaffected status. All three parts are classified under ECCN EAR99 and HTSUS 8541.29.0095.

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