NTMFS4837NHT3G Equivalent & Substitute Parts

Part Overview

The NTMFS4837NHT3G is an N-Channel MOSFET manufactured by onsemi, rated for 30V drain-to-source voltage with continuous drain current of 10.2A at Ta and 75A at Tc. The device is housed in a 5-DFN (5x6) surface mount package and is designed for applications requiring efficient switching and power management in compact form factors.

This part is currently listed as obsolete. Identifying equivalent and substitute parts is necessary to ensure design continuity, maintain supply chain reliability, and support ongoing production requirements for systems utilizing this component.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	30	V
Current - Continuous Drain (Id) @ 25°C	10.2A (Ta), 75A (Tc)	A
Rds On (Max) @ Id, Vgs	5	mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.5	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	23.8	nC @ 4.5V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	3016	pF @ 12V
Power Dissipation (Max)	880mW (Ta), 48W (Tc)	W
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	8-PowerTDFN, 5 Leads	—
Supplier Device Package	5-DFN (5x6) (8-SOFL)	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the NTMFS4837NHT3G is determined by electrical and mechanical parameter equivalence across the following critical specifications:

Electrical Parameters:

Drain-to-source voltage rating (Vdss): 30V
Continuous drain current (Id): 10.2A (Ta), 75A (Tc)
On-state resistance (Rds On): 5mOhm @ 30A, 10V
Gate threshold voltage (Vgs(th)): 2.5V @ 250µA
Gate charge (Qg): 23.8nC @ 4.5V
Input capacitance (Ciss): 3016pF @ 12V
Maximum gate voltage (Vgs): ±20V
Power dissipation: 880mW (Ta), 48W (Tc)
Operating temperature range: -55°C to 150°C

Mechanical Parameters:

Mounting type: Surface Mount
Package type: 5-DFN (5x6) (8-SOFL)
Package designation: 8-PowerTDFN, 5 Leads
Moisture sensitivity level: 1 (Unlimited)

Parts meeting all electrical and mechanical parameters listed above are classified as parametric equivalents and direct substitutes for the NTMFS4837NHT3G.

Parameter Comparison

Parameter	NTMFS4837NHT3G	NTMFS4837NHT1G	Match
Manufacturer	onsemi	onsemi	✓
FET Type	N-Channel	N-Channel	✓
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	✓
Drain to Source Voltage (Vdss)	30V	30V	✓
Current - Continuous Drain (Id) @ 25°C	10.2A (Ta), 75A (Tc)	10.2A (Ta), 75A (Tc)	✓
Rds On (Max) @ Id, Vgs	5mOhm @ 30A, 10V	5mOhm @ 30A, 10V	✓
Vgs(th) (Max) @ Id	2.5V @ 250µA	2.5V @ 250µA	✓
Gate Charge (Qg) (Max) @ Vgs	23.8nC @ 4.5V	23.8nC @ 4.5V	✓
Vgs (Max)	±20V	±20V	✓
Input Capacitance (Ciss) (Max) @ Vds	3016pF @ 12V	3016pF @ 12V	✓
Power Dissipation (Max)	880mW (Ta), 48W (Tc)	880mW (Ta), 48W (Tc)	✓
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	✓
Mounting Type	Surface Mount	Surface Mount	✓
Package / Case	8-PowerTDFN, 5 Leads	8-PowerTDFN, 5 Leads	✓
Supplier Device Package	5-DFN (5x6) (8-SOFL)	5-DFN (5x6) (8-SOFL)	✓
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	✓
Product Status	Obsolete	Active	—

Engineering Selection Recommendations

The NTMFS4837NHT1G is a direct parametric equivalent to the NTMFS4837NHT3G. All electrical characteristics, mechanical specifications, and package dimensions are identical across both parts.

Product Status Consideration: The NTMFS4837NHT3G is classified as obsolete, while the NTMFS4837NHT1G is classified as active. For new designs and ongoing production, the NTMFS4837NHT1G is the appropriate selection to ensure long-term supply chain availability and manufacturer support.

Compliance and Certification: The NTMFS4837NHT1G carries RoHS3 compliance certification, whereas the NTMFS4837NHT3G does not specify this status. Both parts are REACH Unaffected and carry the same ECCN (EAR99) and HTSUS (8541.29.0095) classifications.

Inventory and Availability: The NTMFS4837NHT1G maintains significantly higher inventory levels (6590 Pcs) compared to the obsolete NTMFS4837NHT3G (826 Pcs), supporting sustained production requirements.

Frequently Asked Questions (FAQ)

Q: Can the NTMFS4837NHT1G be used as a direct replacement for the NTMFS4837NHT3G?

A: Yes. The NTMFS4837NHT1G is a parametric equivalent with identical electrical and mechanical specifications. All drain-to-source voltage, current ratings, on-state resistance, gate characteristics, and package dimensions match exactly. Direct substitution is supported without circuit modification.

Q: What is the difference between the NTMFS4837NHT3G and NTMFS4837NHT1G?

A: The primary differences are product status and compliance certification. The NTMFS4837NHT3G is obsolete, while the NTMFS4837NHT1G is active. The NTMFS4837NHT1G carries RoHS3 compliance. All electrical and mechanical parameters are identical.

Q: Are the packages physically identical?

A: Yes. Both parts use the 5-DFN (5x6) surface mount package with 8-PowerTDFN, 5 Leads configuration. PCB footprints and thermal characteristics are identical, requiring no layout modifications.

Q: Does the NTMFS4837NHT1G meet the same operating temperature range?

A: Yes. Both parts operate across the identical temperature range of -55°C to 150°C (TJ), supporting the same thermal design envelope.

Q: What is the moisture sensitivity level for both parts?

A: Both parts carry MSL 1 (Unlimited) classification, indicating unlimited shelf life under standard storage conditions without moisture bake-out requirements.

Q: Is the gate charge specification identical?

A: Yes. Both parts specify 23.8nC maximum gate charge at 4.5V, ensuring identical switching characteristics and driver circuit compatibility.

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