NTMFS4833NST3G N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The NTMFS4833NST3G is an N-Channel 30V MOSFET manufactured by onsemi, rated for 16A continuous drain current at 25°C (Ta) and 156A at case temperature (Tc). This device is part of the SENSEFET® series and features a Surface Mount SO-8FL package. The part is currently classified as Obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	16	A
Continuous Drain Current @ Case Temp (Tc)	156	A
Rds On (Max) @ 30A, 10V	2.2	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2.5	V
Gate Charge (Qg) @ 11.5V	86	nC
Input Capacitance (Ciss) @ 12V	5250	pF
Power Dissipation (Ta)	900	mW
Power Dissipation (Tc)	86.2	W
Operating Temperature Range	-55 to 150	°C
Package Type	SO-8FL (8-PowerTDFN)
Mounting Type	Surface Mount

Substitute Part Grouping Explanation

Substitution of the NTMFS4833NST3G is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss) must equal 30V
Continuous drain current rating must meet or exceed application requirements
Rds On (on-state resistance) must be compatible with thermal and power dissipation constraints
Gate threshold voltage (Vgs(th)) must fall within acceptable switching characteristics
Operating temperature range must span -55°C to 150°C

Mechanical Compatibility Criteria:

Package type must be 8-PowerTDFN or equivalent surface mount form factor
Mounting type must be Surface Mount
Pin configuration must be compatible with existing PCB layouts

The substitute parts listed below meet these criteria and are qualified as functional replacements for the obsolete NTMFS4833NST3G in applications where the specified electrical and thermal performance requirements are satisfied.

Parameter Comparison

Parameter	NTMFS4833NST3G (onsemi)	BSC025N03LSGATMA1 (Infineon)	BSZ0901NSATMA1 (Infineon)	BSZ0902NSATMA1 (Infineon)	CSD17303Q5 (TI)	CSD17576Q5BT (TI)
Manufacturer	onsemi	Infineon Technologies	Infineon Technologies	Infineon Technologies	Texas Instruments	Texas Instruments
Vdss (V)	30	30	30	30	30	30
Id @ 25°C Ta (A)	16	25	22	19	32	100
Id @ Tc (A)	156	100	40	40	100	N/A
Rds On (Max) (mOhm)	2.2 @ 30A, 10V	2.5 @ 30A, 10V	2.0 @ 20A, 10V	2.6 @ 20A, 10V	2.4 @ 25A, 8V	2.0 @ 25A, 10V
Vgs(th) (Max) @ 250µA (V)	2.5	2.2	2.2	2.0	1.6	1.8
Gate Charge Qg (nC)	86 @ 11.5V	74 @ 10V	45 @ 10V	26 @ 10V	23 @ 4.5V	32 @ 4.5V
Ciss (Max) (pF)	5250 @ 12V	6100 @ 15V	2850 @ 15V	1700 @ 15V	3420 @ 15V	4430 @ 15V
Power Dissipation Ta (W)	0.9	2.5	2.1	2.1	3.2	3.1
Power Dissipation Tc (W)	86.2	83	50	48	N/A	125
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	SO-8FL	PG-TDSON-8-5	PG-TSDSON-8	PG-TSDSON-8-FL	8-VSON-CLIP (5x6)	8-VSONP (5x6)
Product Status	Obsolete	Not For New Designs	Active	Active	Active	Active
RoHS Status	N/A	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	N/A	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitutes for Active Production:

BSZ0901NSATMA1 (Infineon Technologies) and BSZ0902NSATMA1 (Infineon Technologies) are recommended as primary substitutes. Both devices are classified as Active products, ensuring long-term availability and ongoing manufacturer support. These parts maintain the 30V Vdss rating and 8-PowerTDFN package compatibility. The BSZ0901NSATMA1 offers 22A continuous drain current with 2.0 mOhm Rds On, while the BSZ0902NSATMA1 provides 19A continuous drain current with 2.6 mOhm Rds On. Both are ROHS3 compliant and carry unlimited moisture sensitivity level (MSL 1).

Secondary Substitutes:

CSD17576Q5BT (Texas Instruments) is an Active product offering superior continuous drain current (100A Ta) with 2.0 mOhm Rds On at 25A, 10V. This device provides higher thermal performance (125W Tc) and is ROHS3 compliant. The lower gate charge (32 nC) and threshold voltage (1.8V) may require gate drive circuit evaluation.

CSD17303Q5 (Texas Instruments) is an Active product rated for 32A continuous drain current with 2.4 mOhm Rds On. This device features lower gate charge (23 nC) and threshold voltage (1.6V), requiring verification of gate drive compatibility.

BSC025N03LSGATMA1 (Infineon Technologies) is classified as Not For New Designs but remains available. This part offers 25A continuous drain current with 2.5 mOhm Rds On and is ROHS3 compliant.

Compliance Considerations:

All substitute parts maintain the -55°C to 150°C operating temperature range. ROHS3 compliance is confirmed for Infineon and Texas Instruments active products. REACH compliance status is Unaffected for all listed substitutes. All parts carry ECCN EAR99 and HTSUS 8541.29.0095 classifications.

Frequently Asked Questions (FAQ)

Q: Can the BSZ0901NSATMA1 directly replace the NTMFS4833NST3G without PCB modifications?

A: The BSZ0901NSATMA1 uses the PG-TSDSON-8 package while the NTMFS4833NST3G uses SO-8FL. Both are 8-PowerTDFN variants with compatible pin configurations and footprints. Verification of PCB layout compatibility is required before implementation.

Q: What is the primary difference between BSZ0901NSATMA1 and BSZ0902NSATMA1?

A: The BSZ0901NSATMA1 is rated for 22A continuous drain current with 2.0 mOhm Rds On, while the BSZ0902NSATMA1 is rated for 19A continuous drain current with 2.6 mOhm Rds On. The BSZ0902NSATMA1 features lower gate charge (26 nC versus 45 nC) and lower input capacitance (1700 pF versus 2850 pF), resulting in faster switching characteristics.

Q: Why is the CSD17576Q5BT rated for 100A continuous drain current when the original part is only 16A?

A: The CSD17576Q5BT is a higher-performance device with superior thermal characteristics (125W Tc). The 100A rating reflects the device's maximum capability under optimal thermal conditions. Application-specific current requirements determine whether this higher rating is necessary or beneficial.

Q: Are all substitute parts ROHS3 compliant?

A: ROHS3 compliance is confirmed for BSC025N03LSGATMA1, BSZ0901NSATMA1, BSZ0902NSATMA1, and CSD17576Q5BT. CSD17303Q5 does not list RoHS status in the provided specifications.

Q: What is the significance of Product Status classifications?

A: Active products (BSZ0901NSATMA1, BSZ0902NSATMA1, CSD17303Q5, CSD17576Q5BT) have ongoing manufacturer support and guaranteed long-term availability. Not For New Designs (BSC025N03LSGATMA1) indicates the manufacturer is not recommending this part for new applications, though existing inventory remains available. Obsolete (NTMFS4833NST3G) indicates the part is no longer manufactured.

Q: How do gate charge differences affect circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET. The NTMFS4833NST3G requires 86 nC at 11.5V, while substitutes range from 23 nC to 74 nC. Lower gate charge reduces switching losses and may allow use of lower-power gate drivers. Gate drive circuit verification is necessary when substituting parts with significantly different Qg values.

Q: What package considerations apply when selecting a substitute?

A: All listed substitutes use 8-PowerTDFN package variants (SO-8FL, PG-TDSON-8-5, PG-TSDSON-8, PG-TSDSON-8-FL, 8-VSON-CLIP, 8-VSONP). While pin configurations are compatible, physical footprint dimensions may vary. PCB layout verification is required to confirm mechanical fit and thermal performance.

Q: Can threshold voltage differences impact circuit operation?

A: Threshold voltage (Vgs(th)) determines the gate voltage at which the MOSFET begins to conduct. The NTMFS4833NST3G has Vgs(th) of 2.5V, while substitutes range from 1.6V to 2.2V. Lower threshold voltages enable operation with lower gate drive voltages but may increase susceptibility to parasitic gate charge effects. Gate drive circuit compatibility must be verified.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message