NTMFS10N7D2C N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The NTMFS10N7D2C is an N-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with 78A continuous drain current at 25°C. This device is part of the PowerTrench® series and is designed for surface mount applications in the 8-PQFN (5x6) package configuration. The part maintains Active product status and is ROHS3 compliant with unlimited moisture sensitivity rating (MSL 1).

Equivalent and substitute parts are identified based on matching or exceeding the electrical performance parameters within the same package family, ensuring functional interchangeability in circuit designs where the NTMFS10N7D2C is specified.

Substiute Parts

NTMFS10N7D2C

onsemiIn Stock: 3644NTMFS10N7D2C Datasheet

Current PartRFQ

NTMFS10N7D2C

onsemiIn Stock: 3644NTMFS10N7D2C Datasheet

Parametric EquivalentRFQ

BSC057N08NS3GATMA1

Infineon TechnologiesIn Stock: 5728BSC057N08NS3GATMA1 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the NTMFS10N7D2C are identified through parametric equivalence analysis. The substitution logic is based on the following criteria:

Primary Matching Parameters:

• FET Type: N-Channel MOSFET technology
• Mounting Type: Surface Mount
• Package Family: 8-PowerTDFN configuration
• Drain-to-Source Voltage (Vdss): Equal to or greater than 100V
• Continuous Drain Current (Id): Equal to or greater than 78A at 25°C
• On-Resistance (Rds On): Performance within acceptable operating range
• Gate Drive Voltage: Compatible with 6V and 10V drive specifications
• Operating Temperature Range: -55°C to 150°C minimum
• Compliance: ROHS3 compliant, MSL 1 rating

Substitution Classification:

Parametric Equivalent: NTMFS10N7D2C (onsemi) — Identical part number and specifications. Direct replacement with no parameter variance.

Similar Substitute: BSC057N08NS3GATMA1 (Infineon Technologies) — Meets core electrical requirements with variations in specific parameters. Vdss rating of 80V is lower than the primary part; however, continuous drain current at Tc (100A) exceeds the NTMFS10N7D2C specification (78A). On-resistance performance (5.7mOhm @ 50A, 10V) is superior. Package family remains 8-PowerTDFN. Both parts share identical drive voltage specifications, operating temperature range, and compliance certifications.

Parameter Comparison

Engineering Selection Recommendations

NTMFS10N7D2C (onsemi) is the primary specification part. This device is Active in product status with full ROHS3 compliance and unlimited moisture sensitivity rating. Selection of this part is appropriate for applications requiring the specified 100V Vdss rating and 78A continuous drain current performance.

BSC057N08NS3GATMA1 (Infineon Technologies) serves as a similar substitute where circuit design parameters permit operation at 80V Vdss maximum. This part is also Active in product status with identical ROHS3 compliance and MSL 1 rating. The substitute offers superior continuous drain current capability (100A at Tc) and lower on-resistance (5.7mOhm), resulting in reduced power dissipation in high-current applications. The higher gate charge (56nC versus 37nC) and input capacitance (3900pF versus 2635pF) may impact switching frequency performance in gate-drive-limited circuits.

Both parts maintain identical operating temperature range (-55°C to 150°C), drive voltage specifications (6V/10V), and regulatory compliance status. Selection between these parts depends on circuit voltage rating requirements and thermal management considerations.

Frequently Asked Questions (FAQ)

Q: Can the BSC057N08NS3GATMA1 be used as a direct replacement for the NTMFS10N7D2C?

A: The BSC057N08NS3GATMA1 is a similar substitute, not a direct replacement. The primary difference is the Vdss rating: 80V versus 100V. If the circuit operates at voltages exceeding 80V, the BSC057N08NS3GATMA1 cannot be used. If maximum circuit voltage is 80V or below, the substitute is electrically compatible. Both parts share the same 8-PowerTDFN package and drive voltage specifications.

Q: What are the key electrical differences between these parts?

A: The NTMFS10N7D2C provides 100V Vdss rating with 78A continuous drain current and 7.2mOhm on-resistance. The BSC057N08NS3GATMA1 provides 80V Vdss rating with 100A continuous drain current and 5.7mOhm on-resistance. The substitute offers higher current capability and lower on-resistance, but lower voltage rating. Gate charge is higher in the substitute (56nC versus 37nC), affecting switching speed in gate-drive-limited applications.

Q: Are both parts available in the same package?

A: Both parts use the 8-PowerTDFN package family for surface mount applications. The NTMFS10N7D2C is specified as 8-PQFN (5x6), and the BSC057N08NS3GATMA1 is specified as PG-TDSON-8-5. Both are compatible with the same PCB footprint and mounting process.

Q: What compliance certifications apply to both parts?

A: Both the NTMFS10N7D2C and BSC057N08NS3GATMA1 are ROHS3 compliant with MSL 1 (unlimited moisture sensitivity) rating. Both parts are REACH unaffected and classified under ECCN EAR99.

Q: Which part should be selected for high-current applications?

A: The BSC057N08NS3GATMA1 is suitable for high-current applications, offering 100A continuous drain current at 25°C (Tc) compared to 78A for the NTMFS10N7D2C. However, circuit voltage requirements must not exceed 80V. The lower on-resistance (5.7mOhm) also reduces power dissipation in high-current operation.

Q: How do gate charge differences affect circuit design?

A: The NTMFS10N7D2C has lower gate charge (37nC) compared to the BSC057N08NS3GATMA1 (56nC). Lower gate charge enables faster switching transitions and reduced gate drive power requirements. In applications with limited gate drive capability or high switching frequency requirements, the lower gate charge of the NTMFS10N7D2C may be advantageous.