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NTMD2P01R2G Equivalent & Substitute Parts
Part Overview
The NTMD2P01R2G is a dual P-channel MOSFET array manufactured by onsemi, designed for surface mount applications in 8-SOIC packaging. This device features logic level gate operation with a maximum drain-source voltage rating of 16V and continuous drain current capability of 2.3A at 25°C. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement continuity.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 16 | V |
| Continuous Drain Current (Id) @ 25°C | 2.3 | A |
| On-Resistance (Rds On) @ Id, Vgs | 100 mOhm @ 2.4A, 4.5V | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ Id | 1.5 | V @ 250µA |
| Gate Charge (Qg) @ Vgs | 18 | nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 750 | pF @ 16V |
| Maximum Power Dissipation | 710 | mW |
| Operating Temperature Range | -55 to 150 | °C (TJ) |
| Configuration | 2 P-Channel (Dual) | — |
| Package Type | 8-SOIC | — |
| Mounting Type | Surface Mount | — |
Substitute Part Grouping Explanation
Substitution of the NTMD2P01R2G is determined by compatibility across the following critical parameters:
Configuration Match: Both the main part and substitute must maintain dual P-channel MOSFET array architecture to ensure pin-compatible operation within existing circuit layouts.
Package Compatibility: Both devices must use 8-SOIC surface mount packaging with identical physical dimensions (0.154" width, 3.90mm) to support direct board-level replacement without layout modification.
Voltage Rating: The substitute part must meet or exceed the 16V drain-source voltage specification of the original device to maintain safe operation within the intended application voltage envelope.
Current Capability: The substitute must support the required continuous drain current specification at 25°C. Devices with equal or higher current ratings are acceptable.
Gate Drive Compatibility: Logic level gate operation must be preserved, with gate threshold voltage specifications compatible with standard digital control signals.
Temperature Range: Operating temperature specifications must encompass the full -55°C to 150°C range to ensure reliability across all intended operating conditions.
The NTMD6P02R2G meets all substitution criteria through configuration equivalence, identical packaging, and superior electrical performance characteristics that exceed the original part specifications.
Parameter Comparison
| Parameter | NTMD2P01R2G | NTMD6P02R2G | Unit |
|---|---|---|---|
| Configuration | 2 P-Channel (Dual) | 2 P-Channel (Dual) | — |
| Package Type | 8-SOIC | 8-SOIC | — |
| Mounting Type | Surface Mount | Surface Mount | — |
| Drain to Source Voltage (Vdss) | 16 | 20 | V |
| Continuous Drain Current (Id) @ 25°C | 2.3 | 4.8 | A |
| On-Resistance (Rds On) @ Vgs | 100 @ 2.4A, 4.5V | 33 @ 6.2A, 4.5V | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ Id | 1.5 @ 250µA | 1.2 @ 250µA | V |
| Gate Charge (Qg) @ Vgs | 18 @ 4.5V | 35 @ 4.5V | nC |
| Input Capacitance (Ciss) @ Vds | 750 @ 16V | 1700 @ 16V | pF |
| Maximum Power Dissipation | 710 | 750 | mW |
| Operating Temperature Range | -55 to 150 | -55 to 150 | °C (TJ) |
| FET Feature | Logic Level Gate | Logic Level Gate | — |
Engineering Selection Recommendations
Product Status Consideration: The NTMD2P01R2G is classified as obsolete, making the NTMD6P02R2G the appropriate selection for new designs and ongoing production support. The NTMD6P02R2G maintains active product status with current manufacturing availability.
Compliance and Certification: The NTMD6P02R2G is RoHS3 compliant and maintains REACH unaffected status, consistent with the original part's regulatory classification. Both devices carry identical ECCN (EAR99) and HTSUS (8541.21.0095) designations, supporting equivalent supply chain and export documentation requirements.
Performance Enhancement: The NTMD6P02R2G provides superior electrical performance through reduced on-resistance (33 mOhm versus 100 mOhm), higher continuous drain current capability (4.8A versus 2.3A), and increased voltage rating (20V versus 16V). These enhancements support applications requiring improved thermal efficiency and higher current handling without circuit redesign.
Moisture Sensitivity: Both devices maintain MSL 1 (Unlimited) classification, indicating no moisture sensitivity constraints for storage, handling, or assembly processes.
Frequently Asked Questions (FAQ)
Q: Can the NTMD6P02R2G directly replace the NTMD2P01R2G in existing circuit designs?
A: Yes. Both devices share identical 8-SOIC packaging, dual P-channel configuration, and logic level gate operation. Pin-to-pin compatibility is maintained, allowing direct substitution without circuit modification. The NTMD6P02R2G's superior electrical specifications (higher voltage rating, increased current capability, lower on-resistance) provide enhanced performance margins within the same physical footprint.
Q: What are the key electrical differences between these two parts?
A: The NTMD6P02R2G exceeds the NTMD2P01R2G across multiple parameters: drain-source voltage rating increases from 16V to 20V, continuous drain current increases from 2.3A to 4.8A, and on-resistance decreases from 100 mOhm to 33 mOhm. Gate threshold voltage is lower (1.2V versus 1.5V), improving gate drive efficiency. Gate charge and input capacitance are higher in the substitute, reflecting the larger die size supporting increased current capability.
Q: Are there any thermal or power dissipation concerns with substitution?
A: The NTMD6P02R2G's maximum power dissipation rating (750 mW) is comparable to the original part (710 mW). The substitute's significantly lower on-resistance (33 mOhm versus 100 mOhm) results in reduced resistive heating at equivalent current levels, providing improved thermal performance in practical applications.
Q: Do both parts require identical gate drive circuitry?
A: Both devices feature logic level gate operation with compatible threshold voltage specifications. The NTMD6P02R2G's lower gate threshold voltage (1.2V versus 1.5V) and lower gate charge (35 nC versus 18 nC) may require minor gate drive optimization for maximum switching speed, but standard digital control signals operate both devices without modification.
Q: What is the impact of higher input capacitance in the NTMD6P02R2G?
A: The NTMD6P02R2G exhibits higher input capacitance (1700 pF versus 750 pF), reflecting its larger die area and higher current capability. This increased capacitance may slightly increase gate drive current requirements and switching transition times. Applications with stringent switching frequency requirements should evaluate gate drive circuit performance with the substitute part.
Q: Are packaging and moisture sensitivity requirements identical?
A: Yes. Both devices use 8-SOIC surface mount packaging with identical physical dimensions. Both maintain MSL 1 (Unlimited) moisture sensitivity classification, requiring no special handling or storage precautions. Assembly and reflow processes are identical for both parts.
Q: What is the availability status of each part?
A: The NTMD2P01R2G is obsolete with 15,165 units in current inventory. The NTMD6P02R2G is active product with 9,434 units available. For new designs and long-term production continuity, the NTMD6P02R2G is the recommended selection.
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