NTJS3157NT4 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The NTJS3157NT4 is an N-Channel MOSFET manufactured by onsemi, rated for 20V drain-to-source voltage with 3.2A continuous drain current. The device is housed in a 6-TSSOP/SC-88/SOT-363 surface mount package and dissipates up to 1W at ambient temperature. This part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support and production continuity. Active alternatives with identical or compatible electrical characteristics are available from onsemi and other manufacturers.

Substiute Parts

NTJS3157NT4
onsemiIn Stock: 792NTJS3157NT4 Datasheet
NTJS3157NT4
Current Part
NTJS3157NT1G
onsemiIn Stock: 1647NTJS3157NT1G Datasheet
NTJS3157NT1G
Parametric Equivalent
NTJS3157NT2G
onsemiIn Stock: 794NTJS3157NT2G Datasheet
NTJS3157NT2G
Parametric Equivalent
AO7408
Alpha & Omega Semiconductor Inc.In Stock: 4262AO7408 Datasheet
AO7408
Similar

Key Parameters

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Continuous Drain Current (Id) @ 25°C 3.2 A
On-Resistance (Rds On Max) @ 4A, 4.5V 60 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 1 V
Gate Charge (Qg) @ 4.5V 15 nC
Maximum Gate Voltage (Vgs) ±8 V
Input Capacitance (Ciss) @ 10V 500 pF
Power Dissipation (Max) 1 W
Operating Temperature Range -55 to 150 °C
Package Type 6-TSSOP, SC-88, SOT-363
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitution of the NTJS3157NT4 is determined by matching the following critical electrical and mechanical parameters:

Electrical Matching Criteria:

  • Drain-to-source voltage rating (Vdss) of 20V or higher
  • Continuous drain current (Id) capability of 3.2A or greater at 25°C
  • On-resistance (Rds On) at specified gate voltage and current conditions
  • Gate threshold voltage (Vgs(th)) within compatible range
  • Maximum gate voltage (Vgs) rating of ±8V or higher
  • Operating temperature range spanning -55°C to 150°C

Mechanical Matching Criteria:

  • Surface mount package: 6-TSSOP, SC-88, or SOT-363
  • Pin-compatible footprint

Compliance Considerations:

  • RoHS compliance status (RoHS3 preferred for new designs)
  • REACH and ECCN classifications

Substitute parts are grouped into two categories: parametric equivalents (identical electrical specifications) and similar alternatives (compatible but with minor parameter variations).

Parameter Comparison

Parameter NTJS3157NT4 NTJS3157NT1G NTJS3157NT2G AO7408
Manufacturer onsemi onsemi onsemi Alpha & Omega Semiconductor Inc.
Product Status Obsolete Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Vdss (V) 20 20 20 20
Id @ 25°C (A) 3.2 3.2 3.2 2
Rds On Max @ 4A, 4.5V (mOhm) 60 60 60 62 @ 2A, 4.5V
Vgs(th) @ 250µA (V) 1 1 1 1
Qg @ 4.5V (nC) 15 15 15 4
Vgs Max (V) ±8 ±8 ±8 ±8
Ciss @ 10V (pF) 500 500 500 320
Power Dissipation Max (W) 1 1 1 0.35
Operating Temperature (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150
Package 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
RoHS Status Non-compliant RoHS3 Compliant RoHS3 Compliant RoHS3 Compliant
Inventory Status 725 Pcs 1634 Pcs 697 Pcs 4171 Pcs

Engineering Selection Recommendations

Parametric Equivalents (Direct Substitutes):

NTJS3157NT1G and NTJS3157NT2G are parametric equivalents of the NTJS3157NT4. Both parts share identical electrical specifications across all measured parameters: 20V Vdss, 3.2A continuous drain current, 60mOhm on-resistance, and 1W power dissipation. Both are manufactured by onsemi and housed in the same 6-TSSOP/SC-88/SOT-363 package. The primary distinction is product status: NTJS3157NT1G and NTJS3157NT2G are active products, whereas NTJS3157NT4 is obsolete. Both substitute parts are RoHS3 compliant, making them suitable for new designs and production environments requiring environmental compliance.

Similar Alternative (Functional Substitute):

AO7408 is a similar N-Channel MOSFET from Alpha & Omega Semiconductor Inc. with compatible voltage and temperature ratings. The part maintains the same 20V Vdss rating and operates across the identical -55°C to 150°C temperature range. However, AO7408 differs in current handling capacity (2A continuous drain current versus 3.2A) and power dissipation (350mW versus 1W). Gate charge (Qg) is significantly lower at 4nC compared to 15nC, and input capacitance (Ciss) is reduced to 320pF from 500pF. These differences result in faster switching characteristics and lower gate drive requirements. AO7408 is RoHS3 compliant and available in the same package family. This part is suitable for applications where the lower current rating is acceptable and where reduced gate charge provides design advantages.

Compliance and Availability:

For new designs and production requiring RoHS3 compliance, NTJS3157NT1G or NTJS3157NT2G are the preferred selections. Both parts are active products with higher inventory availability (1634 and 697 units respectively) compared to the obsolete NTJS3157NT4 (725 units). AO7408 offers the highest inventory level (4171 units) and is suitable for applications where the reduced current and power dissipation specifications align with circuit requirements.

Frequently Asked Questions (FAQ)

Q: Can NTJS3157NT1G directly replace NTJS3157NT4 without circuit modification?

A: Yes. NTJS3157NT1G is a parametric equivalent with identical electrical specifications and the same package footprint. No circuit modifications are required for direct substitution.

Q: What is the difference between NTJS3157NT1G and NTJS3157NT2G?

A: Both parts are parametric equivalents with identical electrical and mechanical specifications. The difference lies in packaging format: NTJS3157NT1G is supplied in Cut Tape (CT) and Digi-Reel format, while NTJS3157NT2G packaging details are not specified. Electrical performance is identical.

Q: Can AO7408 replace NTJS3157NT4 in all applications?

A: AO7408 is a functional substitute with compatible voltage and temperature ratings but reduced current capacity (2A versus 3.2A) and power dissipation (350mW versus 1W). Substitution is valid only for applications where the circuit current demand does not exceed 2A continuous drain current and where the lower power dissipation is acceptable.

Q: Are all substitute parts RoHS compliant?

A: NTJS3157NT1G and NTJS3157NT2G are RoHS3 compliant. AO7408 is also RoHS3 compliant. The original NTJS3157NT4 is RoHS non-compliant. For new designs and regulated environments, the compliant alternatives are required.

Q: What is the package compatibility between these parts?

A: All parts use the 6-TSSOP/SC-88/SOT-363 surface mount package family. Pin configurations are compatible, allowing direct PCB footprint reuse.

Q: Why does AO7408 have lower gate charge than the onsemi parts?

A: Gate charge (Qg) is a device-specific characteristic determined by internal transistor geometry and oxide thickness. The lower gate charge of AO7408 (4nC versus 15nC) results in faster switching transitions and reduced gate drive power requirements, which may be advantageous in high-frequency switching applications.

Q: Which substitute part should be selected for new production?

A: NTJS3157NT1G or NTJS3157NT2G are recommended for new production. Both are active onsemi products with identical specifications to the obsolete NTJS3157NT4, ensuring design continuity and RoHS3 compliance. AO7408 is suitable if the reduced current rating and lower power dissipation align with application requirements.

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