NTGD3149CT1G Equivalent & Substitute Parts

Part Overview

The NTGD3149CT1G is an N and P-Channel complementary MOSFET array manufactured by onsemi, housed in a 6-TSOP surface mount package. This device integrates dual logic-level gate MOSFETs with a maximum drain-source voltage rating of 20V and continuous drain current capabilities of 3.2A (N-channel) and 2.4A (P-channel). The component is rated for 900mW maximum power dissipation and operates across the temperature range of -55°C to 150°C.

The NTGD3149CT1G is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this complementary MOSFET array configuration.

Substiute Parts

NTGD3149CT1G

onsemiIn Stock: 18550NTGD3149CT1G Datasheet

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NTGD4167CT1G

onsemiIn Stock: 85265NTGD4167CT1G Datasheet

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BSL215CH6327XTSA1

Infineon TechnologiesIn Stock: 28460BSL215CH6327XTSA1 Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the NTGD3149CT1G is determined by the following critical parameters:

Primary Compatibility Criteria:

• Configuration: N and P-Channel complementary MOSFET array
• Package Type: SOT-23-6 Thin (6-TSOP) surface mount
• FET Feature: Logic Level Gate operation
• Operating Temperature Range: -55°C to 150°C
• Mounting Type: Surface Mount
• Moisture Sensitivity Level: 1 (Unlimited)

Electrical Performance Criteria:

• Drain to Source Voltage (Vdss): Must be equal to or greater than 20V
• Continuous Drain Current (Id): Must support the application's current requirements
• On-Resistance (Rds On): Lower values indicate improved performance; higher values may impact thermal characteristics
• Gate Charge (Qg): Affects switching speed and gate drive requirements
• Input Capacitance (Ciss): Influences gate drive circuit design
• Maximum Power Dissipation: Must accommodate thermal requirements

Substitute parts are grouped based on their ability to meet or exceed these parameters while maintaining functional equivalence in complementary MOSFET array applications.

Parameter Comparison

Engineering Selection Recommendations

NTGD4167CT1G (onsemi)

The NTGD4167CT1G is an active product from onsemi with identical package configuration and operating temperature range to the NTGD3149CT1G. This substitute provides a higher drain-source voltage rating of 30V, which exceeds the original 20V specification and offers enhanced voltage margin for circuit protection. The continuous drain current ratings of 2.6A (N-channel) and 1.9A (P-channel) are lower than the original device; this substitute is suitable for applications where current requirements do not exceed these levels. The on-resistance increases to 90mOhm, which may result in higher power dissipation under high-current conditions. The gate charge and input capacitance remain comparable to the original device. This substitute maintains REACH Unaffected status and achieves ROHS3 compliance, supporting regulatory requirements for new designs.

BSL215CH6327XTSA1 (Infineon Technologies)

The BSL215CH6327XTSA1 is an active product from Infineon Technologies with automotive-grade qualification (AEC-Q101) and ROHS3 compliance. This substitute maintains the 20V drain-source voltage rating and -55°C to 150°C operating temperature range of the original device. The continuous drain current is rated at 1.5A, which is significantly lower than the original 3.2A specification; this substitute is applicable only to applications with reduced current requirements. The on-resistance of 140mOhm is higher than the original device, resulting in increased power dissipation. The maximum power dissipation is limited to 500mW, compared to the original 900mW rating. The gate charge is substantially lower at 0.73nC, and input capacitance is reduced to 143pF, both of which indicate improved switching characteristics and reduced gate drive requirements. The automotive qualification and 2.5V drive capability provide additional design flexibility for automotive and industrial applications. This substitute maintains REACH Unaffected status.

Frequently Asked Questions (FAQ)

Q: Can the NTGD4167CT1G be used as a direct replacement for the NTGD3149CT1G?

A: The NTGD4167CT1G shares the same package type (SOT-23-6 Thin, 6-TSOP), configuration (N and P-Channel), and operating temperature range. However, the continuous drain current ratings are lower (2.6A and 1.9A versus 3.2A and 2.4A). Direct substitution is possible only if the application current requirements do not exceed the NTGD4167CT1G ratings. The higher Vdss rating (30V versus 20V) provides additional voltage margin.

Q: Is the BSL215CH6327XTSA1 suitable for high-current applications?

A: No. The BSL215CH6327XTSA1 is rated for a maximum continuous drain current of 1.5A, which is significantly lower than the NTGD3149CT1G (3.2A N-channel, 2.4A P-channel). This substitute is applicable only to applications with reduced current requirements. The maximum power dissipation is also limited to 500mW.

Q: What are the package compatibility considerations?

A: All three devices utilize the SOT-23-6 Thin surface mount package (6-TSOP configuration). The physical footprint and pin configuration are compatible, allowing for direct PCB layout substitution without redesign. The Infineon BSL215CH6327XTSA1 uses the designation PG-TSOP6-6, which is functionally equivalent to the 6-TSOP package.

Q: How do the on-resistance values affect circuit performance?

A: The NTGD3149CT1G has an on-resistance of 60mOhm, the NTGD4167CT1G has 90mOhm, and the BSL215CH6327XTSA1 has 140mOhm. Higher on-resistance results in increased power dissipation (I²R losses) during conduction. For applications with high continuous current or frequent switching, the lower on-resistance of the original device provides superior thermal performance. Substitute selection must account for thermal design margins.

Q: What is the significance of the gate charge difference between these devices?

A: The NTGD3149CT1G and NTGD4167CT1G both have gate charge of 5.5nC, while the BSL215CH6327XTSA1 has 0.73nC. Lower gate charge reduces the energy required to switch the device and allows for faster switching speeds with lower gate drive current. The BSL215CH6327XTSA1 offers improved switching efficiency but is limited by its lower current rating.

Q: Are there regulatory compliance differences between these substitutes?

A: The NTGD4167CT1G and BSL215CH6327XTSA1 are both ROHS3 compliant and REACH Unaffected. The BSL215CH6327XTSA1 carries automotive-grade qualification (AEC-Q101), making it suitable for automotive and industrial applications with stringent reliability requirements. The original NTGD3149CT1G does not specify RoHS status.

Q: Can the NTGD4167CT1G handle higher voltage applications than the original device?

A: Yes. The NTGD4167CT1G has a drain-source voltage rating of 30V, compared to 20V for the NTGD3149CT1G. This higher rating provides additional voltage margin and allows operation in circuits with higher supply voltages or transient overvoltage conditions. However, the current ratings are lower, so overall power handling capability must be evaluated for the specific application.

Q: What is the impact of input capacitance differences on circuit design?

A: The NTGD3149CT1G has input capacitance of 387pF, the NTGD4167CT1G has 295pF, and the BSL215CH6327XTSA1 has 143pF. Lower input capacitance reduces the capacitive load on the gate driver circuit, allowing for faster switching transitions and lower gate drive power consumption. The BSL215CH6327XTSA1 offers the lowest capacitive load, which may simplify gate drive circuit design.

Q: Is the BSL215CH6327XTSA1 suitable for applications requiring 3.2A continuous current?

A: No. The BSL215CH6327XTSA1 is rated for a maximum continuous drain current of 1.5A. Applications requiring the full 3.2A rating of the original NTGD3149CT1G cannot use this substitute without exceeding device ratings and risking thermal failure.