NTD85N02RG Equivalent & Substitute Parts

Part Overview

The NTD85N02RG is an N-Channel MOSFET manufactured by onsemi, rated for 24 V drain-to-source voltage with continuous drain current of 12 A (Ta) and 85 A (Tc). The device is housed in a DPAK (TO-252-3) surface mount package and is designed for applications requiring moderate voltage and high current switching capability. The product status is listed as Obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement.

Substiute Parts

NTD85N02RG
onsemiIn Stock: 789NTD85N02RG Datasheet
NTD85N02RG
Current Part
IRLR7833TRPBF
Infineon TechnologiesIn Stock: 17863IRLR7833TRPBF Datasheet
IRLR7833TRPBF
Similar
STD95N2LH5
STMicroelectronicsIn Stock: 17829STD95N2LH5 Datasheet
STD95N2LH5
Similar

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 24 V
Continuous Drain Current @ 25°C (Tc) 85 A
On-State Resistance (Rds On) @ 20A, 10V 5.2 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 2 V
Gate Charge (Qg) @ 5V 17.7 nC
Input Capacitance (Ciss) @ 20V 2050 pF
Power Dissipation (Tc) 78.1 W
Operating Temperature Range -55 to 150 °C
Package Type DPAK (TO-252-3)
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitution of the NTD85N02RG is determined by the following critical parameters: drain-to-source voltage rating (Vdss), continuous drain current capability (Id), on-state resistance (Rds On), package type (DPAK), and mounting configuration (surface mount). Substitute parts must maintain electrical compatibility within the application's voltage and current requirements while preserving the same physical footprint and thermal characteristics.

The identified substitute parts are grouped based on their ability to operate within or exceed the electrical specifications of the NTD85N02RG while maintaining DPAK packaging. The substitutes differ in voltage rating, current capacity, and on-state resistance, which determines their suitability for specific application requirements.

Parameter Comparison

Parameter NTD85N02RG (onsemi) STD95N2LH5 (STMicroelectronics) IRLR7833TRPBF (Infineon)
Drain-to-Source Voltage (Vdss) 24 V 25 V 30 V
Continuous Drain Current @ 25°C (Tc) 85 A 80 A 140 A
On-State Resistance (Rds On) @ 10V 5.2 mOhm @ 20A 4.5 mOhm @ 40A 4.5 mOhm @ 15A
Gate Threshold Voltage (Vgs(th)) @ 250µA 2 V 1 V 2.3 V
Gate Charge (Qg) @ Vgs 17.7 nC @ 5V 13.4 nC @ 5V 50 nC @ 4.5V
Input Capacitance (Ciss) 2050 pF @ 20V 1817 pF @ 25V 4010 pF @ 15V
Power Dissipation (Tc) 78.1 W 70 W 140 W
Operating Temperature Range -55 to 150°C -55 to 175°C -55 to 175°C
Package Type DPAK (TO-252-3) DPAK (TO-252-3) TO-252AA (DPAK)
Product Status Obsolete Active Not For New Designs
RoHS Compliance ROHS3 Compliant

Engineering Selection Recommendations

STD95N2LH5 (STMicroelectronics) is the primary substitute for the NTD85N02RG. This device maintains a 25 V Vdss rating, which is compatible with the 24 V specification of the original part. The continuous drain current of 80 A is marginally lower than the 85 A rating of the NTD85N02RG but remains suitable for applications designed within the original specifications. The STD95N2LH5 features improved on-state resistance (4.5 mOhm versus 5.2 mOhm) and lower gate charge (13.4 nC versus 17.7 nC), resulting in reduced switching losses. The device is currently in Active product status and carries ROHS3 compliance, making it suitable for new designs and long-term procurement. The operating temperature range extends to 175°C, providing enhanced thermal margin compared to the original part's 150°C maximum.

IRLR7833TRPBF (Infineon Technologies) serves as an alternative substitute for applications requiring higher current capacity or voltage margin. This device is rated for 30 V Vdss and 140 A continuous drain current, providing significant headroom above the NTD85N02RG specifications. The on-state resistance is equivalent to the STD95N2LH5 at 4.5 mOhm. However, the IRLR7833TRPBF exhibits higher gate charge (50 nC) and input capacitance (4010 pF), which may increase switching losses in high-frequency applications. The product status is listed as Not For New Designs, limiting its applicability to legacy system support or replacement scenarios. The device maintains DPAK packaging and operates across the -55°C to 175°C temperature range.

Selection between these substitutes depends on application-specific requirements: the STD95N2LH5 is recommended for direct replacement in active designs due to its Active status and optimized electrical characteristics, while the IRLR7833TRPBF is suitable for applications where higher current capacity or voltage rating provides design margin.

Frequently Asked Questions (FAQ)

Q: Can the STD95N2LH5 directly replace the NTD85N02RG in existing designs?

A: The STD95N2LH5 is electrically compatible with the NTD85N02RG for applications operating within the original 24 V and 85 A specifications. The 25 V Vdss rating of the STD95N2LH5 accommodates the 24 V requirement of the NTD85N02RG. The continuous drain current of 80 A is marginally lower but remains within acceptable tolerance for designs that do not require the full 85 A capacity. Both devices use identical DPAK packaging, ensuring mechanical compatibility without PCB layout modifications.

Q: What are the key differences between the STD95N2LH5 and IRLR7833TRPBF substitutes?

A: The primary differences are voltage rating, current capacity, and switching characteristics. The STD95N2LH5 is rated for 25 V and 80 A with lower gate charge (13.4 nC), making it suitable for direct replacement in designs matching the original specifications. The IRLR7833TRPBF is rated for 30 V and 140 A with higher gate charge (50 nC) and input capacitance, providing greater design margin but potentially higher switching losses. The STD95N2LH5 is in Active product status, while the IRLR7833TRPBF is Not For New Designs.

Q: Are there thermal considerations when substituting these parts?

A: All three devices are housed in DPAK packaging with identical thermal interfaces. The power dissipation ratings differ: NTD85N02RG at 78.1 W (Tc), STD95N2LH5 at 70 W (Tc), and IRLR7833TRPBF at 140 W (Tc). The lower on-state resistance of the substitute parts (4.5 mOhm versus 5.2 mOhm) reduces resistive losses, potentially lowering junction temperature in high-current applications. The extended operating temperature range of the substitutes (-55°C to 175°C versus -55°C to 150°C) provides additional thermal margin.

Q: What is the impact of gate charge differences on circuit performance?

A: Gate charge affects switching speed and driver power consumption. The NTD85N02RG has a gate charge of 17.7 nC at 5 V. The STD95N2LH5 has lower gate charge at 13.4 nC, reducing driver current requirements and switching losses. The IRLR7833TRPBF has significantly higher gate charge at 50 nC, requiring higher driver current and potentially increasing switching losses in high-frequency applications. Selection depends on the gate driver capability and switching frequency of the application.

Q: Is DPAK packaging identical across all three devices?

A: All three devices use DPAK (TO-252-3) surface mount packaging with two leads plus a tab. The NTD85N02RG and STD95N2LH5 are specified as standard DPAK, while the IRLR7833TRPBF is specified as TO-252AA (DPAK). These designations refer to the same physical package footprint, ensuring PCB compatibility without layout modifications.

Q: What compliance certifications should be considered for new designs?

A: The STD95N2LH5 carries ROHS3 compliance certification, making it suitable for applications subject to RoHS regulations. The NTD85N02RG (Obsolete) and IRLR7833TRPBF (Not For New Designs) do not carry current compliance certifications. All three devices are REACH Unaffected and carry EAR99 ECCN classification. For new designs, the STD95N2LH5 is the recommended choice based on active product status and compliance certifications.

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