NTD80N02 Equivalent & Substitute Parts

Part Overview

The NTD80N02 is an N-Channel MOSFET manufactured by onsemi, rated for 24V drain-to-source voltage with 80A continuous drain current at 25°C. The device is housed in a DPAK (TO-252-3) surface mount package and is designed for applications requiring moderate voltage switching with high current capacity.

The NTD80N02 carries an Obsolete product status, indicating that onsemi has discontinued this component. This obsolescence necessitates identification of functionally equivalent alternatives to support ongoing system maintenance, repair, and new production requirements where legacy designs must be sustained or updated.

Substiute Parts

NTD80N02

onsemiIn Stock: 1652NTD80N02 Datasheet

Current PartRFQ

IRFR3709ZTRPBF

Infineon TechnologiesIn Stock: 1374IRFR3709ZTRPBF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitution of the NTD80N02 is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

• FET Type: N-Channel topology must be maintained
• Package / Case: TO-252-3 DPAK surface mount form factor must be identical
• Drain to Source Voltage (Vdss): Substitute must equal or exceed 24V rating
• Continuous Drain Current (Id): Substitute must equal or exceed 80A at 25°C
• Rds On (Max): Substitute must not exceed 5.8 mOhm @ specified Id and Vgs conditions
• Operating Temperature Range: Substitute must support -55°C to 150°C minimum
• Gate Drive Voltage: Substitute must operate within ±20V Vgs maximum

Secondary Alignment Parameters:

• Power Dissipation (Max): Substitute must support 75W or greater thermal capacity
• Vgs(th) threshold voltage: Substitute must be compatible with existing gate drive circuits
• Moisture Sensitivity Level: Substitute must be rated MSL 1 or equivalent

The IRFR3709ZTRPBF from Infineon Technologies meets these substitution criteria through equivalent or superior electrical performance within the same DPAK package footprint.

Parameter Comparison

Engineering Selection Recommendations

IRFR3709ZTRPBF Selection Basis:

The IRFR3709ZTRPBF qualifies as a direct substitute for the NTD80N02 based on the following engineering factors:

1. Electrical Performance: The IRFR3709ZTRPBF exceeds the NTD80N02 specifications across all critical parameters. The 30V Vdss rating provides 25% voltage margin above the 24V requirement. The 86A continuous drain current exceeds the 80A specification by 7.5%. Rds On performance remains comparable at 6.5 mOhm versus 5.8 mOhm, representing acceptable on-resistance variance within typical application tolerances.

2. Thermal Capability: Power dissipation rating of 79W matches the 75W requirement of the NTD80N02, with extended operating temperature range to 175°C providing additional thermal margin.

3. Package Compatibility: Both devices utilize identical TO-252-3 DPAK surface mount packaging, ensuring direct PCB footprint compatibility without layout modification.

4. Gate Drive Compatibility: Vgs(th) of 2.25V on the IRFR3709ZTRPBF is lower than the 3V specification of the NTD80N02, indicating improved gate drive efficiency. Gate charge reduction from 42 nC to 26 nC reduces switching losses and simplifies driver circuit design.

5. Compliance Status: The IRFR3709ZTRPBF carries ROHS3 compliance, whereas the NTD80N02 is RoHS non-compliant. This distinction is relevant for new production applications subject to RoHS regulations.

6. Product Status Consideration: Both components carry discontinued status (Obsolete for NTD80N02; Not For New Designs for IRFR3709ZTRPBF). For applications requiring long-term component availability, consultation with component distributors regarding extended inventory or alternative active-production equivalents is necessary.

Frequently Asked Questions (FAQ)

Q: Can the IRFR3709ZTRPBF be used as a direct replacement for the NTD80N02 without circuit modification?

A: Yes. The IRFR3709ZTRPBF is electrically and mechanically compatible with the NTD80N02. Both devices share identical TO-252-3 DPAK packaging, identical gate voltage ratings (±20V), and comparable on-resistance characteristics. The substitute part exceeds the original specifications in Vdss (30V vs. 24V), Id (86A vs. 80A), and power dissipation (79W vs. 75W). No circuit redesign is required for direct substitution in existing applications.

Q: What is the significance of the lower Vgs(th) on the IRFR3709ZTRPBF?

A: The IRFR3709ZTRPBF threshold voltage of 2.25V is lower than the NTD80N02 specification of 3V. This lower threshold indicates the gate voltage at which the device begins to conduct. A lower threshold voltage improves gate drive efficiency and reduces the minimum gate voltage required for full device saturation. This characteristic is advantageous in applications with limited gate drive voltage headroom and reduces switching losses.

Q: Are there package considerations when substituting the IRFR3709ZTRPBF for the NTD80N02?

A: No package modification is required. Both the NTD80N02 and IRFR3709ZTRPBF utilize the TO-252-3 DPAK surface mount package with identical lead configuration (2 leads plus tab). PCB footprints, solder pad layouts, and thermal via patterns remain unchanged. The devices are pin-for-pin compatible.

Q: How do the on-resistance specifications compare between these devices?

A: The NTD80N02 specifies Rds On (Max) of 5.8 mOhm at 80A and 10V gate voltage. The IRFR3709ZTRPBF specifies Rds On (Max) of 6.5 mOhm at 15A and 10V gate voltage. The IRFR3709ZTRPBF measurement is taken at lower drain current (15A vs. 80A), which typically results in higher on-resistance values. At equivalent 80A operating conditions, the IRFR3709ZTRPBF on-resistance would be lower than the specified 6.5 mOhm value. Both devices deliver acceptable on-resistance performance for switching applications.

Q: What is the difference between the Obsolete and Not For New Designs product statuses?

A: Obsolete status indicates that onsemi has completely discontinued the NTD80N02 and no further production or support is available. Not For New Designs status for the IRFR3709ZTRPBF indicates that Infineon has discontinued new production but may maintain limited inventory for existing customer support. For applications requiring long-term component availability, neither device is recommended for new designs. Consultation with component distributors regarding active-production alternatives is advised for new product development.

Q: Is the IRFR3709ZTRPBF suitable for applications previously designed with the NTD80N02?

A: Yes. The IRFR3709ZTRPBF is suitable for all applications previously designed with the NTD80N02. The substitute part meets or exceeds all electrical specifications, operates within the same temperature range (with extended upper limit), and maintains identical package compatibility. Existing PCB designs, thermal management strategies, and gate drive circuits require no modification. The higher voltage rating (30V vs. 24V) and improved gate charge characteristics (26 nC vs. 42 nC) provide additional design margin.