NTD70N03RG Equivalent & Substitute Parts

Part Overview

The NTD70N03RG is an N-Channel MOSFET manufactured by onsemi, rated for 25V drain-to-source voltage with continuous drain current of 10A at ambient temperature (Ta) and 32A at case temperature (Tc). This device is packaged in a Surface Mount DPAK (TO-252-3) configuration and is designed for general-purpose switching applications requiring moderate voltage and current ratings.

The NTD70N03RG is classified as an obsolete product. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production or maintenance requirements for systems utilizing this component.

Substiute Parts

NTD70N03RG

onsemiIn Stock: 2690NTD70N03RG Datasheet

Current PartRFQ

IPD090N03LGATMA1

Infineon TechnologiesIn Stock: 5417IPD090N03LGATMA1 Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the NTD70N03RG is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

• FET Type: N-Channel topology must be maintained
• Technology: MOSFET (Metal Oxide) construction required
• Drain-to-Source Voltage (Vdss): Substitute must equal or exceed 25V rating
• Continuous Drain Current: Substitute must support equivalent or higher current capacity
• RDS(on): On-state resistance must be comparable or lower to maintain switching efficiency
• Gate Threshold Voltage: Must fall within acceptable operating range for gate drive circuits
• Operating Temperature Range: Must support -55°C to 175°C junction temperature range

Mechanical Compatibility Criteria:

• Package Type: TO-252-3 DPAK (2 Leads + Tab) form factor required for PCB layout compatibility
• Mounting Type: Surface Mount configuration mandatory
• Pin Configuration: 3-pin DPAK pinout (Gate, Drain, Source) must be identical

The IPD090N03LGATMA1 from Infineon Technologies meets these substitution criteria with enhanced electrical performance characteristics while maintaining mechanical compatibility.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The NTD70N03RG is classified as obsolete, making the IPD090N03LGATMA1 a necessary alternative for new designs and ongoing production support. The IPD090N03LGATMA1 carries an Active product status, ensuring long-term availability and manufacturer support.

Compliance and Certification: Both devices are rated for identical operating temperature ranges (-55°C to 175°C junction temperature) and share equivalent gate voltage specifications (±20V maximum). The IPD090N03LGATMA1 is RoHS3 Compliant and REACH Unaffected, meeting current regulatory requirements. Both parts carry ECCN EAR99 and HTSUS 8541.29.0095 classifications with Moisture Sensitivity Level 1 (Unlimited).

Electrical Performance: The IPD090N03LGATMA1 provides superior electrical characteristics: 30V Vdss rating (versus 25V), 40A continuous drain current (versus 32A), and lower power dissipation at case temperature (42W versus 62.5W). The RDS(on) values remain comparable (9mOhm at 30A, 10V versus 8mOhm at 20A, 10V), ensuring switching efficiency is maintained or improved.

Mechanical Compatibility: Both devices utilize identical TO-252-3 DPAK packaging with Surface Mount configuration, enabling direct PCB layout compatibility without redesign.

Frequently Asked Questions (FAQ)

Q: Can the IPD090N03LGATMA1 directly replace the NTD70N03RG in existing designs?

A: Yes. Both devices share identical TO-252-3 DPAK pinout and Surface Mount configuration. The IPD090N03LGATMA1 provides equal or superior electrical performance across all critical parameters, including gate threshold voltage, operating temperature range, and gate voltage specifications.

Q: What are the key electrical differences between these parts?

A: The IPD090N03LGATMA1 features a higher Vdss rating (30V versus 25V), greater continuous drain current capacity (40A versus 32A), and lower power dissipation at case temperature (42W versus 62.5W). Gate threshold voltage increases slightly from 2V to 2.2V, and gate charge increases from 13.2nC to 15nC. These differences represent performance enhancements suitable for the same application class.

Q: Are there any gate drive circuit modifications required?

A: No. Both devices specify identical maximum gate voltage (±20V) and operate within the same threshold voltage range. Gate drive circuits designed for the NTD70N03RG function without modification with the IPD090N03LGATMA1.

Q: How do the RDS(on) specifications compare?

A: The NTD70N03RG specifies 8mOhm maximum at 20A and 10V gate voltage. The IPD090N03LGATMA1 specifies 9mOhm maximum at 30A and 10V gate voltage. At equivalent current levels, the IPD090N03LGATMA1 maintains comparable on-state resistance, ensuring switching efficiency is preserved.

Q: What is the significance of the higher Vdss rating on the substitute part?

A: The 30V Vdss rating on the IPD090N03LGATMA1 provides additional voltage margin compared to the 25V rating of the NTD70N03RG. This allows operation in circuits with higher transient voltage spikes without exceeding device ratings, improving reliability in switching applications.

Q: Are there packaging or supply chain advantages to the IPD090N03LGATMA1?

A: The IPD090N03LGATMA1 is supplied in Tape & Reel (TR) format with 5400 pieces in stock, compared to the obsolete NTD70N03RG. Active product status ensures continued availability and manufacturer support for future production requirements.

Q: Do both devices meet current regulatory compliance standards?

A: The IPD090N03LGATMA1 is RoHS3 Compliant and REACH Unaffected, meeting current regulatory requirements. Both devices carry identical ECCN EAR99 and HTSUS classifications with Moisture Sensitivity Level 1 (Unlimited).