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NTD60N02RG Equivalent & Substitute Parts
Part Overview
The NTD60N02RG is an N-Channel MOSFET manufactured by onsemi, rated for 25V drain-to-source voltage with continuous drain current of 8.5A at Ta and 32A at Tc. This device is packaged in a Surface Mount DPAK (TO-252-3) configuration and is classified as Obsolete. Due to its obsolete status, equivalent substitute parts are necessary to maintain design continuity and ensure component availability for new production runs and field replacements.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 25 | V |
| Continuous Drain Current @ 25°C (Ta) | 8.5 | A |
| Continuous Drain Current @ 25°C (Tc) | 32 | A |
| Rds On (Max) @ Id, Vgs | 10.5 mOhm @ 20A, 10V | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ Id | 2 | V @ 250µA |
| Gate Charge (Qg) @ Vgs | 14 | nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | 1330 | pF @ 20V |
| Power Dissipation (Max) @ Ta | 1.25 | W |
| Power Dissipation (Max) @ Tc | 58 | W |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package Type | TO-252-3 DPAK | Surface Mount |
| Moisture Sensitivity Level | 1 | Unlimited |
Substitute Part Grouping Explanation
Substitution of the NTD60N02RG is determined by strict alignment of the following electrical and mechanical parameters:
Critical Matching Parameters:
- Drain to Source Voltage (Vdss): Must equal 25V
- Package Type: Must be TO-252-3 DPAK (Surface Mount)
- FET Type: Must be N-Channel MOSFET
- Operating Temperature Range: Must support -55°C to 175°C (TJ)
- Moisture Sensitivity Level: Must be MSL 1 or equivalent
Performance Parameters for Functional Equivalence:
- Continuous Drain Current (Tc): Must meet or exceed 32A
- Rds On (Max): Must be equal to or lower than 10.5 mOhm @ 20A, 10V
- Gate Threshold Voltage: Must be within acceptable switching range
- Gate Charge: Lower values indicate faster switching characteristics
- Input Capacitance: Affects gate drive requirements
The IRLR8259TRPBF meets all critical matching parameters and exceeds performance specifications in drain current capacity and on-resistance characteristics.
Parameter Comparison
| Parameter | NTD60N02RG (onsemi) | IRLR8259TRPBF (Infineon) | Unit |
|---|---|---|---|
| Drain to Source Voltage (Vdss) | 25 | 25 | V |
| Continuous Drain Current @ Tc | 32 | 57 | A |
| Rds On (Max) @ 10V Vgs | 10.5 @ 20A | 8.7 @ 21A | mOhm |
| Gate Threshold Voltage (Vgs(th)) | 2 @ 250µA | 2.35 @ 25µA | V |
| Gate Charge (Qg) @ 4.5V | 14 | 10 | nC |
| Input Capacitance (Ciss) | 1330 @ 20V | 900 @ 13V | pF |
| Power Dissipation (Max) @ Tc | 58 | 48 | W |
| Operating Temperature Range | -55 to 175 | -55 to 175 | °C (TJ) |
| Package Type | TO-252-3 DPAK | TO-252-3 DPAK | Surface Mount |
| Moisture Sensitivity Level | 1 | 1 | Unlimited |
| Product Status | Obsolete | Not For New Designs | N/A |
Engineering Selection Recommendations
NTD60N02RG (onsemi) - Primary Part: The NTD60N02RG is classified as Obsolete. This status indicates that the manufacturer has discontinued production and support. While inventory remains available (15,465 pcs), this part should not be selected for new designs due to long-term supply uncertainty and lack of manufacturer support.
IRLR8259TRPBF (Infineon Technologies) - Substitute Part: The IRLR8259TRPBF is classified as Not For New Designs, indicating limited manufacturer support but continued availability. This part is ROHS3 Compliant and provides superior electrical performance compared to the NTD60N02RG:
- Higher continuous drain current capacity (57A vs. 32A at Tc)
- Lower on-resistance (8.7 mOhm vs. 10.5 mOhm @ 10V Vgs)
- Lower gate charge (10 nC vs. 14 nC @ 4.5V), enabling faster switching
- Lower input capacitance (900 pF vs. 1330 pF), reducing gate drive power
Both parts share identical voltage ratings (25V Vdss), identical package type (TO-252-3 DPAK), identical operating temperature range (-55°C to 175°C TJ), and identical moisture sensitivity level (MSL 1). Both are REACH Unaffected and classified under ECCN EAR99.
For applications requiring the NTD60N02RG, the IRLR8259TRPBF provides direct functional substitution with enhanced performance margins and improved thermal characteristics.
Frequently Asked Questions (FAQ)
Q: Can the IRLR8259TRPBF directly replace the NTD60N02RG in existing designs?
A: Yes. Both devices share identical voltage ratings (25V Vdss), identical package type (TO-252-3 DPAK), and identical operating temperature range (-55°C to 175°C TJ). The IRLR8259TRPBF provides superior performance with higher drain current capacity and lower on-resistance, making it functionally compatible for all applications where the NTD60N02RG was used.
Q: What are the key differences between these two MOSFETs?
A: The primary differences are drain current capacity (57A vs. 32A at Tc), on-resistance (8.7 mOhm vs. 10.5 mOhm @ 10V Vgs), gate charge (10 nC vs. 14 nC @ 4.5V), and input capacitance (900 pF vs. 1330 pF). The IRLR8259TRPBF exhibits lower switching losses and improved thermal performance due to reduced on-resistance.
Q: Are the package dimensions identical between NTD60N02RG and IRLR8259TRPBF?
A: Yes. Both devices use the TO-252-3 DPAK (2 Leads + Tab) surface mount package, also designated as SC-63. PCB layout and thermal management considerations remain unchanged during substitution.
Q: What is the significance of the product status classifications?
A: NTD60N02RG is classified as Obsolete, meaning the manufacturer has ceased production and support. IRLR8259TRPBF is classified as Not For New Designs, indicating limited manufacturer support but continued availability. For new designs, neither part is recommended; however, for legacy system maintenance or existing design continuity, the IRLR8259TRPBF is the appropriate substitute.
Q: Do both parts have the same moisture sensitivity requirements?
A: Yes. Both the NTD60N02RG and IRLR8259TRPBF are classified as MSL 1 (Unlimited), indicating no moisture sensitivity restrictions. Standard handling and storage procedures apply to both devices.
Q: How do the gate charge specifications affect circuit design?
A: The IRLR8259TRPBF has lower gate charge (10 nC vs. 14 nC @ 4.5V), requiring less energy to switch the device. This results in reduced gate drive power dissipation and faster switching transitions, which can improve overall circuit efficiency and reduce electromagnetic interference.
Q: Are there compliance or regulatory differences between these parts?
A: Both parts are REACH Unaffected and classified under ECCN EAR99. The IRLR8259TRPBF is ROHS3 Compliant. Both share identical HTSUS classification (8541.29.0095). No regulatory barriers exist for substitution.
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