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NTD4805NT4G Equivalent & Substitute Parts
Part Overview
The NTD4805NT4G is an N-Channel 30V MOSFET manufactured by onsemi, packaged in DPAK (TO-252-3) surface mount configuration. This device is rated for 12.7A continuous drain current at 25°C ambient temperature and 95A at case temperature, with a maximum drain-source voltage of 30V. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility across voltage ratings, current handling capacity, thermal characteristics, and package specifications.
Substiute Parts
Key Parameters
| Parameter | NTD4805NT4G | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 30 | V |
| Continuous Drain Current @ 25°C (Ta) | 12.7 | A |
| Continuous Drain Current @ Case (Tc) | 95 | A |
| Rds On (Max) @ 30A, 10V | 5 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 2.5 | V |
| Gate Charge (Qg) @ 11.5V | 48 | nC |
| Input Capacitance (Ciss) @ 12V | 2865 | pF |
| Power Dissipation (Tc) | 79 | W |
| Operating Temperature Range | -55 to 175 | °C |
| Package Type | DPAK (TO-252-3) | — |
| RoHS Status | ROHS3 Compliant | — |
Substitute Part Grouping Explanation
Substitution eligibility for the NTD4805NT4G is determined by the following critical parameters:
Mandatory Matching Criteria:
- Drain to Source Voltage (Vdss): 30V minimum
- Package Type: DPAK (TO-252-3) surface mount configuration
- FET Type: N-Channel enhancement mode
- Technology: MOSFET (Metal Oxide)
- RoHS Compliance: ROHS3 Compliant
- Moisture Sensitivity Level: MSL 1 (Unlimited)
Performance Compatibility Criteria:
- Continuous Drain Current (Tc): 80A or greater
- Rds On (Max): 6.5 mOhm or lower at specified test conditions
- Gate Threshold Voltage: 2.2V to 2.6V range
- Operating Temperature: -55°C to 175°C minimum
- Power Dissipation (Tc): 50W or greater
Substitute parts must satisfy all mandatory criteria and maintain electrical performance within the specified ranges to ensure functional equivalence in circuit applications.
Parameter Comparison
| Parameter | NTD4805NT4G | STD86N3LH5 | STD96N3LLH6 | IPD040N03LGATMA1 | AOD514 | PJD80N03_L2_00001 | STD17NF03LT4 | Unit |
|---|---|---|---|---|---|---|---|---|
| Vdss | 30 | 30 | 30 | 30 | 30 | 30 | 30 | V |
| Id (Tc) | 95 | 80 | 80 | 90 | 46 | 80 | 17 | A |
| Rds On (Max) @ 10V | 5 | 5 | 4.2 | 4 | 6.5 | 6 | 50 | mOhm |
| Vgs(th) @ 250µA | 2.5 | 2.5 | 2.5 | 2.2 | 2.6 | 2.5 | 2.2 | V |
| Gate Charge (Qg) | 48 | 14 | 20 | 38 | 22.5 | 12 | 6.5 | nC |
| Ciss @ Vds | 2865 | 1850 | 2200 | 3900 | 951 | 1323 | 320 | pF |
| Power Dissipation (Tc) | 79 | 70 | 70 | 79 | 50 | 55 | 30 | W |
| Operating Temp Range | -55 to 175 | to 175 | to 175 | -55 to 175 | -55 to 175 | -55 to 150 | -55 to 175 | °C |
| Package | DPAK | DPAK | DPAK | PG-TO252-3-11 | TO-252 | TO-252 | DPAK | — |
| Product Status | Obsolete | Active | Active | Active | Not For New Designs | Active | Active | — |
Engineering Selection Recommendations
Primary Substitutes (Active Product Status):
STD86N3LH5 and STD96N3LLH6 (STMicroelectronics) are the preferred substitutes. Both devices maintain 30V Vdss rating, deliver 80A continuous drain current at case temperature, and are packaged in DPAK configuration. STD86N3LH5 carries AEC-Q101 automotive qualification, suitable for applications requiring automotive-grade reliability. STD96N3LLH6 features DeepGATE and STripFET VI technology with improved Rds On performance (4.2 mOhm) and lower gate charge (20 nC), providing enhanced switching efficiency. Both parts are ROHS3 compliant with MSL 1 rating and support the full -55°C to 175°C operating temperature range.
IPD040N03LGATMA1 (Infineon Technologies) provides equivalent electrical performance with 90A continuous drain current at case temperature and superior Rds On characteristics (4 mOhm @ 30A, 10V). This OptiMOS series device is actively produced and ROHS3 compliant. The package designation PG-TO252-3-11 is mechanically and electrically compatible with DPAK footprints.
Secondary Substitutes (Limited Application):
PJD80N03_L2_00001 (Panjit International) is an active product offering 80A continuous drain current at case temperature with 6 mOhm Rds On. Operating temperature range extends to 150°C maximum, which is 25°C lower than the primary part. This device is suitable for applications not requiring the full 175°C upper temperature limit.
STD17NF03LT4 (STMicroelectronics) is an active product with reduced current handling (17A at case temperature) and significantly higher Rds On (50 mOhm). This device is suitable only for lower-current applications and is not recommended as a direct substitute for high-current designs.
Not Recommended:
AOD514 (Alpha & Omega Semiconductor) carries "Not For New Designs" status and is therefore unsuitable for new product development.
Frequently Asked Questions (FAQ)
Q: Can STD86N3LH5 or STD96N3LLH6 be used as direct replacements for NTD4805NT4G?
A: Yes. Both devices meet all mandatory substitution criteria: 30V Vdss rating, DPAK package, N-Channel MOSFET technology, ROHS3 compliance, and MSL 1 rating. Both deliver 80A continuous drain current at case temperature, which is within the performance envelope of the original part. STD96N3LLH6 offers superior Rds On performance (4.2 mOhm vs. 5 mOhm) and lower gate charge, making it the preferred choice for switching applications requiring minimal power loss.
Q: What is the significance of the DPAK package specification?
A: DPAK (TO-252-3) is a surface mount package with two leads plus a thermal tab. All substitute parts listed maintain this package configuration, ensuring mechanical and electrical compatibility with existing PCB layouts and thermal management designs. Package variants such as PG-TO252-3-11 (Infineon) are mechanically equivalent and footprint-compatible.
Q: Why is IPD040N03LGATMA1 listed as a primary substitute despite higher input capacitance?
A: IPD040N03LGATMA1 meets all mandatory electrical and mechanical criteria and is actively produced. The higher input capacitance (3900 pF vs. 2865 pF) results in slightly increased gate charge requirements but does not prevent functional substitution. Applications with gate driver current limitations should evaluate gate charge specifications (38 nC vs. 48 nC) to confirm compatibility.
Q: Is AOD514 suitable for new designs?
A: No. AOD514 carries "Not For New Designs" product status classification. While the device meets electrical and mechanical compatibility criteria, its obsolescence trajectory makes it unsuitable for applications requiring long-term supply assurance and ongoing manufacturer support.
Q: What is the impact of operating temperature range differences?
A: NTD4805NT4G and most substitute parts support -55°C to 175°C operation. PJD80N03_L2_00001 supports -55°C to 150°C maximum. For applications operating above 150°C, PJD80N03_L2_00001 is not suitable. All other listed substitutes maintain the full temperature range.
Q: How does Rds On variation affect circuit performance?
A: Rds On determines conduction losses in the MOSFET. Lower Rds On values reduce power dissipation and heat generation. STD96N3LLH6 (4.2 mOhm) and IPD040N03LGATMA1 (4 mOhm) provide superior efficiency compared to NTD4805NT4G (5 mOhm). Higher Rds On values such as STD17NF03LT4 (50 mOhm) result in increased power dissipation and are suitable only for lower-current applications.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All listed substitute parts carry ROHS3 Compliant status and MSL 1 (Unlimited) moisture sensitivity rating, matching the environmental compliance profile of the original NTD4805NT4G.
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