NTB30N06L Equivalent & Substitute Parts

Part Overview

The NTB30N06L is an N-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 30A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design requirements and production continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the D2PAK package form factor.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	30	A
Drive Voltage (Max Rds On)	5	V
Rds On (Max) @ Id, Vgs	46 mOhm @ 15A, 5V	mOhm
Gate Threshold Voltage Vgs(th) (Max) @ Id	2	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	32	nC @ 5V
Maximum Gate Voltage Vgs (Max)	±15	V
Input Capacitance (Ciss) (Max) @ Vds	1150	pF @ 25V
Power Dissipation (Max)	88.2	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
RoHS Status	Non-compliant

Substitute Part Grouping Explanation

Substitution of the NTB30N06L is determined by the following critical electrical and mechanical parameters:

Voltage Rating: All substitute parts must maintain a Vdss rating of 60V to ensure safe operation within the original design envelope.

Current Rating: Substitute parts must support a minimum continuous drain current of 30A at the specified temperature condition. Parts with higher current ratings (38A, 50A) are acceptable as they provide design margin without compromising functionality.

Package Compatibility: All substitute parts must use the D2PAK (TO-263) surface mount package to ensure mechanical and thermal interface compatibility with existing PCB layouts and thermal management systems.

Operating Temperature: All substitute parts must support the -55°C to 175°C operating temperature range to maintain performance across the full design specification.

Gate Drive Voltage: Substitute parts operating at 10V gate drive voltage are compatible with the 5V-specified NTB30N06L, as 10V represents a higher drive voltage that produces equivalent or superior on-state performance.

RoHS and Compliance Status: Active, RoHS3-compliant substitute parts are preferred for new designs and long-term supply continuity.

Parameter Comparison

Parameter	NTB30N06L (onsemi)	IRFZ34SPBF (Vishay)	PSMN015-60BS,118 (Nexperia)	STB45NF06T4 (STMicroelectronics)
Vdss (V)	60	60	60	60
Id @ 25°C (A)	30 (Ta)	30 (Tc)	50 (Tc)	38 (Tc)
Rds On (Max) (mOhm)	46 @ 15A, 5V	50 @ 18A, 10V	14.8 @ 15A, 10V	28 @ 19A, 10V
Vgs(th) (Max) (V)	2 @ 250µA	4 @ 250µA	4 @ 1mA	4 @ 250µA
Gate Charge Qg (Max) (nC)	32 @ 5V	46 @ 10V	20.9 @ 10V	58 @ 10V
Vgs (Max) (V)	±15	±20	±20	±20
Ciss (Max) (pF)	1150 @ 25V	1200 @ 25V	1220 @ 30V	1730 @ 25V
Power Dissipation (Max) (W)	88.2 (Tc)	88 (Tc)	86 (Tc)	80 (Tc)
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	D2PAK (TO-263-3)	TO-263 (D2PAK)	D2PAK (TO-263-3)	D2PAK (TO-263-4)
Product Status	Obsolete	Active	Active	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRFZ34SPBF (Vishay Siliconix): This part provides direct electrical equivalence to the NTB30N06L with matched 60V/30A ratings and comparable on-state resistance. The IRFZ34SPBF is active in production with ROHS3 compliance, ensuring long-term availability and regulatory alignment. Gate charge is moderately higher at 46 nC, which may increase switching losses in high-frequency applications. This part is suitable for direct replacement in designs where gate drive voltage can be increased to 10V.

PSMN015-60BS,118 (Nexperia USA Inc.): This part exceeds the current rating specification at 50A continuous drain current, providing significant design margin for thermal and electrical stress. The on-state resistance is substantially lower at 14.8 mOhm, resulting in reduced power dissipation and improved efficiency. Gate charge is the lowest among substitutes at 20.9 nC, minimizing switching losses. ROHS3 compliance and active production status support long-term supply continuity. This part is recommended for applications requiring enhanced thermal performance or where lower on-state losses are beneficial.

STB45NF06T4 (STMicroelectronics): This part provides intermediate current capability at 38A, exceeding the 30A specification with moderate design margin. On-state resistance of 28 mOhm is lower than the original part, improving efficiency. Gate charge is elevated at 58 nC, which may increase switching losses. The part is active in production with ROHS3 compliance. Input capacitance is notably higher at 1730 pF, which may affect gate drive circuit design. This part is suitable for applications where moderate current margin and improved on-state performance are required.

All three substitute parts maintain the critical 60V voltage rating, D2PAK package compatibility, and -55°C to 175°C operating temperature range. Selection should be based on specific application requirements for current margin, switching frequency, and thermal management.

Frequently Asked Questions (FAQ)

Q: Can the IRFZ34SPBF directly replace the NTB30N06L without circuit modifications?

A: The IRFZ34SPBF is electrically compatible with the NTB30N06L for voltage and current specifications. However, the gate drive voltage differs (10V vs. 5V). If the original circuit provides 5V gate drive, the IRFZ34SPBF will operate but with reduced on-state performance. Circuits designed for 10V gate drive can use this part without modification.

Q: Why does the PSMN015-60BS,118 have a lower on-state resistance despite higher current rating?

A: Lower on-state resistance results from advanced semiconductor process technology and larger die area. The PSMN015-60BS,118 represents a newer generation MOSFET design that achieves superior electrical characteristics while maintaining the same voltage and package specifications.

Q: Are all substitute parts pin-compatible with the NTB30N06L?

A: All substitute parts use the D2PAK (TO-263) package with identical pin configuration: Gate, Drain, and Source. Physical layout compatibility is maintained across all listed substitutes.

Q: What is the significance of the different gate charge values?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Higher gate charge increases switching losses and requires more gate drive current. The NTB30N06L specifies 32 nC at 5V, while substitutes range from 20.9 nC to 58 nC at 10V. Applications with high switching frequency may benefit from lower gate charge values.

Q: Can the STB45NF06T4 be used in place of the NTB30N06L in a 5V gate drive circuit?

A: The STB45NF06T4 is specified for 10V gate drive voltage. Operation at 5V gate drive will result in degraded on-state performance and higher conduction losses. This part is not recommended for circuits limited to 5V gate drive without circuit redesign.

Q: Why is RoHS compliance important for substitute part selection?

A: RoHS3 compliance ensures the part meets current environmental and regulatory requirements for lead-free manufacturing and restricted substance limitations. Active, compliant parts support long-term supply continuity and regulatory alignment for new designs and production.

Q: What thermal considerations apply when selecting a substitute part?

A: All substitute parts maintain comparable power dissipation ratings (80W to 88.2W at Tc). The PSMN015-60BS,118 offers the lowest on-state resistance, resulting in reduced power dissipation for a given current level. Thermal management design should account for the specific on-state resistance and current profile of the selected substitute.

Q: Is the NTB30N06L still available for new designs?

A: The NTB30N06L is classified as obsolete. While inventory may be available from distributors, new designs should specify one of the active substitute parts to ensure long-term supply continuity and regulatory compliance.

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