NTB25P06 P-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The NTB25P06 is a P-Channel MOSFET manufactured by onsemi, rated for 60V drain-to-source voltage with 27.5A continuous drain current at 25°C. The device is housed in a D2PAK (TO-263-3) surface mount package and is designed for 120W maximum power dissipation. The NTB25P06 is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support and production continuity. Substitute parts must maintain functional compatibility across critical electrical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance while accommodating the surface mount D2PAK package format.

Substiute Parts

NTB25P06

onsemiIn Stock: 31906NTB25P06 Datasheet

Current PartRFQ

NTB25P06T4G

onsemiIn Stock: 15428NTB25P06T4G Datasheet

DirectRFQ

IRF5210STRLPBF

Infineon TechnologiesIn Stock: 36135IRF5210STRLPBF Datasheet

SimilarRFQ

RSJ250P10TL

Rohm SemiconductorIn Stock: 2035RSJ250P10TL Datasheet

SimilarRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the NTB25P06 are classified into two categories based on electrical and mechanical compatibility:

Direct Equivalent (Pin-Compatible, Identical Electrical Specifications): The NTB25P06T4G is a direct equivalent manufactured by onsemi. This part maintains identical electrical specifications across all critical parameters: 60V Vdss, 27.5A continuous drain current, 82mOhm Rds On, and 120W power dissipation. The primary distinction is product status—NTB25P06T4G is active and RoHS3 compliant, whereas the original NTB25P06 is obsolete and RoHS non-compliant. Both parts use the D2PAK package and are functionally interchangeable.

Similar Substitutes (Higher Voltage Rating, Enhanced Performance): The IRF5210STRLPBF (Infineon Technologies) and RSJ250P10TL (Rohm Semiconductor) are classified as similar substitutes. These parts exceed the voltage and current specifications of the NTB25P06 while maintaining the D2PAK surface mount package. Both devices are rated for 100V Vdss, providing additional voltage margin. The IRF5210STRLPBF offers 38A continuous drain current and 60mOhm Rds On, while the RSJ250P10TL provides 25A continuous drain current and 63mOhm Rds On. These parts are suitable for applications where the NTB25P06 specifications are met or exceeded, and where the higher voltage rating does not create design conflicts.

Substitution logic is based strictly on the following allowed parameters:

• P-Channel FET topology
• Surface mount D2PAK package compatibility
• Drain-to-source voltage rating equal to or greater than 60V
• Continuous drain current equal to or greater than 25A
• On-resistance characteristics compatible with circuit requirements
• Operating temperature range encompassing -55°C to 175°C
• RoHS and REACH compliance status for regulatory requirements

Parameter Comparison

Engineering Selection Recommendations

For Direct Replacement (Identical Specifications): The NTB25P06T4G is the recommended direct substitute for the obsolete NTB25P06. This part is manufactured by the same supplier (onsemi) and maintains identical electrical and thermal specifications. The NTB25P06T4G is active in production and carries RoHS3 compliance certification, addressing regulatory requirements that the original NTB25P06 does not meet. This substitution requires no circuit redesign and is suitable for all applications currently using the NTB25P06.

For Enhanced Performance Applications: The IRF5210STRLPBF (Infineon Technologies) is suitable for applications requiring higher voltage margin or increased current capacity. This device provides 100V Vdss (40V higher than the NTB25P06), 38A continuous drain current (10.5A higher), and improved on-resistance of 60mOhm. The IRF5210STRLPBF is RoHS3 compliant and active in production. Selection of this part is appropriate when circuit design permits the higher voltage rating and when the enhanced thermal performance (170W at Tc) provides system-level benefits.

For Current-Limited Applications: The RSJ250P10TL (Rohm Semiconductor) is suitable for applications where the NTB25P06 current specification (27.5A) exceeds circuit requirements. This device provides 100V Vdss with 25A continuous drain current and 63mOhm on-resistance. The RSJ250P10TL is RoHS3 compliant and active in production. This substitution is appropriate when design margins permit the lower current rating and when the LPTS package variant is compatible with board layout constraints.

All substitute parts are RoHS3 compliant and REACH unaffected, meeting current regulatory requirements. Product status for all substitutes is active, ensuring long-term availability and supply chain stability.

Frequently Asked Questions (FAQ)

Q: Can the NTB25P06T4G be used as a direct replacement for the NTB25P06? A: Yes. The NTB25P06T4G is a direct equivalent with identical electrical specifications, thermal ratings, and D2PAK package. The primary difference is product status—NTB25P06T4G is active and RoHS3 compliant. No circuit modifications are required.

Q: What are the key differences between the NTB25P06 and the IRF5210STRLPBF? A: The IRF5210STRLPBF has a higher drain-to-source voltage rating (100V vs. 60V), higher continuous drain current (38A vs. 27.5A), and lower on-resistance (60mOhm vs. 82mOhm). The IRF5210STRLPBF also has higher gate charge (230nC vs. 50nC) and input capacitance (2780pF vs. 1680pF). Both use the D2PAK package and are RoHS3 compliant.

Q: Is the RSJ250P10TL suitable for all NTB25P06 applications? A: The RSJ250P10TL is suitable for applications where the continuous drain current requirement does not exceed 25A. The device provides 100V Vdss, exceeding the NTB25P06 voltage rating. On-resistance is comparable (63mOhm vs. 82mOhm). Verify that the LPTS package variant is compatible with board layout before selection.

Q: Why does the IRF5210STRLPBF have higher gate charge than the NTB25P06? A: Gate charge is a function of device size and voltage rating. The IRF5210STRLPBF is rated for 100V and 38A, requiring larger die geometry than the 60V, 27.5A NTB25P06. Higher gate charge increases switching time and driver power requirements. Circuit design must account for this parameter when selecting gate drivers.

Q: Are all substitute parts available in the same D2PAK package? A: The NTB25P06T4G and IRF5210STRLPBF are available in D2PAK (TO-263-3) packages. The RSJ250P10TL is available in LPTS package, which is mechanically compatible with D2PAK footprints but may have different lead geometry. Verify PCB footprint compatibility before board layout finalization.

Q: What is the operating temperature difference between the NTB25P06 and substitute parts? A: The NTB25P06 and NTB25P06T4G are rated for -55°C to 175°C (TJ). The IRF5210STRLPBF is rated for -55°C to 150°C (TJ), providing 25°C lower maximum junction temperature. The RSJ250P10TL maximum operating temperature is specified as 150°C (TJ). Applications requiring operation above 150°C must use the NTB25P06 or NTB25P06T4G.

Q: Do all substitute parts meet current RoHS and REACH requirements? A: Yes. The NTB25P06T4G, IRF5210STRLPBF, and RSJ250P10TL are all RoHS3 compliant and REACH unaffected. The original NTB25P06 is RoHS non-compliant. Regulatory compliance requirements favor selection of active substitute parts for new designs and production continuity.

Q: What is the impact of higher input capacitance in the IRF5210STRLPBF? A: The IRF5210STRLPBF has input capacitance of 2780pF compared to 1680pF in the NTB25P06. Higher input capacitance increases gate charge and switching losses. Gate driver selection must provide sufficient current to charge the gate within required switching time. Circuit simulation is recommended to verify switching performance.

Q: Can the NTB25P06 be replaced with a higher voltage rated device in all applications? A: Higher voltage rated devices (100V) can be used in applications designed for 60V operation, provided that circuit topology and component ratings are compatible. However, higher voltage devices typically have higher on-resistance, gate charge, and input capacitance. Thermal and switching performance must be verified for the specific application.