NS8DTHE3_A/P Equivalent & Substitute Parts

Part Overview

The NS8DTHE3_A/P is a general-purpose rectifier diode manufactured by Vishay General Semiconductor - Diodes Division. This through-hole TO-220AC package diode is rated for 200 V DC reverse voltage and 8 A average rectified current. The part is classified as obsolete, necessitating identification of active equivalent alternatives for ongoing production and maintenance applications. Substitute parts must maintain electrical and mechanical compatibility while meeting automotive-grade AEC-Q101 qualification requirements.

Substiute Parts

NS8DTHE3_A/P

Vishay General Semiconductor - Diodes DivisionIn Stock: 1019NS8DTHE3_A/P Datasheet

Current PartRFQ

NS8DT-E3/45

Vishay General Semiconductor - Diodes DivisionIn Stock: 1213NS8DT-E3/45 Datasheet

Parametric EquivalentRFQ

GPA803HC0G

Taiwan Semiconductor CorporationIn Stock: 1071GPA803HC0G Datasheet

DirectRFQ

GPA803 C0G

Taiwan Semiconductor CorporationIn Stock: 898GPA803 C0G Datasheet

Parametric EquivalentRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the NS8DTHE3_A/P are selected based on strict parametric equivalence across the following critical criteria:

Electrical Parameters (Must Match):

• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 8 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Operating Temperature - Junction: -55°C to 150°C

Mechanical Parameters (Must Match):

• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC

Compliance Parameters (Must Match):

• RoHS Status: ROHS3 Compliant
• REACH Status: REACH Unaffected
• Moisture Sensitivity Level (MSL): 1 (Unlimited)

Substitute parts identified below maintain full electrical and mechanical compatibility with the original NS8DTHE3_A/P specification. Reverse leakage current and capacitance parameters may vary within acceptable tolerances for general-purpose rectifier applications.

Parameter Comparison

Engineering Selection Recommendations

NS8DT-E3/45 is a parametric equivalent from Vishay General Semiconductor - Diodes Division. This part maintains identical electrical specifications and is currently in active production status. The NS8DT-E3/45 provides direct functional replacement for the obsolete NS8DTHE3_A/P with ROHS3 compliance and equivalent thermal performance. Automotive-grade qualification data is not specified for this variant.

GPA803HC0G is a direct manufacturer equivalent from Taiwan Semiconductor Corporation. This part meets all electrical and mechanical requirements with active product status and AEC-Q101 automotive qualification. The GPA803HC0G exhibits lower reverse leakage current (5 µA versus 10 µA) and slightly lower capacitance (50 pF versus 55 pF), both favorable characteristics for general-purpose rectification. Full automotive-grade compliance is maintained.

GPA803 C0G is a parametric equivalent from Taiwan Semiconductor Corporation with identical electrical performance to GPA803HC0G. This variant is actively produced and ROHS3 compliant. Automotive-grade qualification and AEC-Q101 certification status are not specified for this variant.

For applications requiring maintained automotive qualification and AEC-Q101 certification, GPA803HC0G is the preferred substitute. For general-purpose applications where automotive qualification is not mandatory, NS8DT-E3/45 or GPA803 C0G provide cost-effective alternatives with full electrical compatibility.

Frequently Asked Questions (FAQ)

Q: Can NS8DT-E3/45 be used as a direct replacement for NS8DTHE3_A/P?

A: Yes. NS8DT-E3/45 maintains identical electrical specifications including 200 V reverse voltage, 8 A average rectified current, 1.1 V forward voltage at 8 A, and standard recovery speed characteristics. Both parts use TO-220-2 package configuration and operate across -55°C to 150°C junction temperature range. The primary difference is product status: NS8DT-E3/45 is active production while NS8DTHE3_A/P is obsolete.

Q: What is the difference between GPA803HC0G and GPA803 C0G?

A: Both parts are manufactured by Taiwan Semiconductor Corporation and share identical electrical specifications for voltage, current, and temperature range. The primary distinction is that GPA803HC0G carries automotive-grade designation and AEC-Q101 qualification, while GPA803 C0G does not specify these certifications. For automotive applications, GPA803HC0G is the appropriate selection.

Q: Are there any package compatibility concerns when substituting these parts?

A: No. All substitute parts use TO-220-2 package configuration with TO-220AC supplier device package designation. Through-hole mounting type is consistent across all parts. Physical footprint and pin configuration are identical, allowing direct PCB mounting without layout modifications.

Q: How do reverse leakage current differences affect substitution?

A: The NS8DTHE3_A/P specifies 10 µA reverse leakage at 200 V, while GPA803HC0G and GPA803 C0G specify 5 µA at the same conditions. Lower reverse leakage current is a favorable characteristic that does not compromise compatibility. NS8DT-E3/45 maintains the original 10 µA specification. All values remain within acceptable limits for general-purpose rectifier applications.

Q: Is RoHS3 compliance maintained across all substitute parts?

A: Yes. All substitute parts—NS8DT-E3/45, GPA803HC0G, and GPA803 C0G—are ROHS3 compliant with REACH unaffected status. Moisture sensitivity level remains 1 (Unlimited) across all variants, indicating no special handling requirements during storage or assembly.

Q: Which substitute part should be selected for new automotive designs?

A: GPA803HC0G is the recommended selection for new automotive designs. This part maintains AEC-Q101 qualification and automotive-grade designation, ensuring compliance with automotive industry standards. Electrical specifications are identical to the original NS8DTHE3_A/P, and the part is in active production with established supply chain availability.